Abstract: A container includes a base body constituted of a side wall and a bottom portion, having a hollow or open portion for housing therein an electrical storage element, a conductive layer disposed at a bottom surface of the bottom portion facing the hollow or open portion, a first electrode electrically connected to the conductive layer and led out to an upper surface of the side wall of the base body, and a lid body having on its upper and lower surfaces electrically-connected second electrode and conductive portion. The lid body is bonded to the upper surface of the side wall of the base body to cover the hollow or open portion. The first electrode and the second electrode are substantially flush with each other, thus making it possible to provide a battery or an electric double layer capacitor which can be easily surface-mounted and exhibit an excellent circuit-board productivity.

Abstract: A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 ?m (about 0.5 ?m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Abstract: A battery case as an electronic component case includes a second conductive plate made of metal, an insulating wall having an upper end surface and a bottom end surface, a first conductive plate made of metal joined to an upper end surface of the insulating wall, and a second conductive plate attached to the bottom end surface of the insulating wall. The insulating wall has a first conductor layer formed on an entire perimeter of the upper end surface thereof and a second conductor layer formed on an entire perimeter of a lower surface thereof, an electrode formed at a peripheral portion of the lower surface of the insulating wall so as to be electrically independent from the second conductor layer, an external connection terminal brazed to the electrode, and a connection conductor formed from the first conductor layer to the electrode. The first conductive plate is attached to the insulating wall via the first conductor layer.

Abstract: A manufacturing method for a semiconductor laser in which a ratio of a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlxGa1-xAs (X=0.550) second cladding layer to a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlGaInP second upper cladding layer is identical to a ratio of an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlxGa1-xAs (X=0.550) second cladding layer to an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlGaInP second upper cladding layer.

Abstract: There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

Abstract: An n-type AlGaAs cladding layer of a first semiconductor laser 39 to be first formed on an n-type GaAs buffer layer 22 is constructed of a two-layer structure of a second n-type AlxGa1-xAs (x=0.500) cladding layer 23 and a first n-type AlxGa1-xAs (x=0.425) cladding layer 24. With this arrangement, in removing by etching the second n-type cladding layer 23 located on the n-type GaAs buffer layer 22 side with HF, no cloudiness occurs since the Al crystal mixture ratio x of the second n-type cladding layer 23 is 0.500, allowing mirror surface etching to be achieved. Moreover, by virtue of selectivity to GaAs, the etching automatically stops in the n-type GaAs buffer layer 22. Even in the above case, ellipticity can be improved by matching the vertical radiation angle ?? to 36 degrees since the Al crystal mixture ratio x of the first n-type cladding layer 24 located on the AlGaAs multi-quantum well active layer 25 side is 0.425.

Abstract: A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 &mgr;m (about 0.5 &mgr;m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Abstract: There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

Abstract: A solenoid supply current value is predicted from a detected battery voltage, an operational fluid temperature, and the like, and a chopper ON time during chopping drive is reduced, and relatively, a chopper OFF time is increased by using, for example, a voltage correction coefficient which becomes smaller as the battery voltage becomes larger, or a temperature correction coefficient which is set smaller as the operational fluid temperature is smaller. Alternatively, an overexciting current of the solenoid is detected at least at two time points during overexcitation, and a termination time point of the overexcitation at which the overexciting current reaches a target overexciting current is predicted from the overexciting current value, and the overexcitation is terminated when the termination time point is reached.

Abstract: In a control device for an automatic transmission which holds a line pressure solenoid of an automatic transmission in a stationary ON state while an engine is in a stop state, when a key switch is switched ON, "stationary ON control device" supplies a high voltage to the line pressure solenoid for a short time so as to over-excite it, and a holding magnetization of the line pressure solenoid is then maintained by a low voltage. Subsequently, if it is determined by engine rotation speed detection device that a cell motor is being driven, ordinary control is performed wherein an over-excitation, holding magnetization and OFF cycle is repeated. Further, when a battery voltage drops while the cell motor is being driven so that the line pressure solenoid with holding magnetization switches OFF, recovery device rapidly restores the solenoid to the normal stationary ON state by performing intermittent over-excitation.

Abstract: A communications device for a control device is provided which includes a signal line communicating with the control device, and a transmitter that transmits a pulse signal including digital information to the control device through the signal line. The transmitter varies a duty ratio of the pulse signal so that the duty ratio corresponds to the logical value 1/0 of the digital information. The control device reads a binary signal from the signal line at a predetermined frequency based on a first processing program, and processes the binary signal according to the first processing program. The control device detects passage of a leading edge of the pulse signal from a change in the received binary signal, and reproduces the digital information based on the binary signal read at a time when a first predetermined time elapses after the passage of the leading edge of the pulse signal is detected. The first predetermined time is set to be intermediate between the varied duty ratios.

Abstract: A load driving control system for an automotive vehicle having a load such as an electric motor for a radiator fan. The load driving control system comprises a microcomputer storing a load driving necessariness decision program by which a decision is made as to whether driving of the load is necessary or not in accordance with the detected vehicle operating condition so as to output one of load driving necessariness and unnecessariness commands. A load driving circuit is provided to provide a driving current in response to the load driving necessariness command, thereby driving the load. Additionally, a load compulsorily driving requirement circuit is provided to compulsorily drive the load when the microcomputer stops outputting each command even though an ignition key switch is turned ON.

Abstract: An electronic control system for an automotive vehicle includes communication portion provided between first and second control units and, specification information presenting portion arranged at the side of the first control unit for presenting specification information of the second control unit to the second control unit via the communication portion, specification information analyzing portion arranged at the side of the second control unit for analyzing the specification information, and control content setting portion arranged at the side of the second control unit for setting content of control depending upon the specification information on the basis of a result of analysis by the specification information analyzing portion. From the first control unit to the second control unit, the content of control of the second control unit is set depending upon the specification information by presenting the second control unit via the communication portion.

Abstract: An engine compartment cooling fan provided in an engine compartment is controlled by a control unit, to be placed in its ON or OFF state, on the basis of an output from an engine compartment temperature sensor. The control unit continues the control of the engine compartment fan for a predetermined period of time after a key switch is turned off, with power supplied from a battery through a by-pass line. This permits the engine to be re-started without difficulty even after a short time of stop of the vehicle. Upon lapse of the predetermined time, the control unit disconnects the power supply through the by-pass line and stops its operation. Since there is no power consumption after the end of the operation of the cooling fan, unnecessary consumption of the battery can be avoided.

Abstract: A control apparatus for an automatic transmission in which when a select position of a select lever operated by a driver is detected by an inhibitor switch, and a detected select position is a neutral position and/or a reverse position, ignition timing is retarded or fuel supply is reduced to reduce output torque of an engine, the output torque of the engine is also reduced when abnormal detection of the select position is determined due to a disconnection of the inhibitor switch or the like, thereby preventing transmission of excessive output torque to a frictional engaging element to achieve a reverse and driving force transmission members connecting to the frictional engaging element.

Abstract: A wideband wave absorber of the present invention comprising a sintered magnetic tile and a mat fiber assembly comprising ferrite powder adhered directly or indirectly to the fibers therein, said magnetic powder being adhered to the mat fiber assembly by the step of (a) coating a paint composed of the magnetic powder and a latex, (b) thermally spraying the magnetic powder over the mat fiber assembly, or (c) dusting the magnetic powder on the fibers in the assembly having an adhesive layer formed on their surfaces and covering said powder with an adhesive layer, wherein said mat fiber assembly desirably has a density transition effectuated from the top surface to the inside with increasing density, or has a constant density in its entirety and comprises increasing amounts of adhered magnetic powder from the top surface toward the rear side. According to the present invention, a wave absorber can be made very thin and capable of absorbing waves over a wide range of frequencies.