Patents by Inventor Yoshifumi Kawamoto
Yoshifumi Kawamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20100131093Abstract: A fabricating method for a system that includes a plurality of processing apparatuses connected to each other by an inter-apparatus transporter and a computer storing managing information of processing and transporting of semiconductor wafers. The processing apparatuses have an interface for loading and unloading a plurality of the semiconductor wafers that are contained in a carrier. The semiconductor waters are processed in processing chambers of the processing apparatuses and the result of processing is monitored. In the processing, a first carrier containing the plurality of the semiconductor wafers having been processed in the first processing apparatus is transported toward the second processing apparatus by the inter-apparatus transporter prior to unloading of a second carrier containing semiconductor wafers processed in the second processing apparatus, according to the managing information.Type: ApplicationFiled: September 9, 2009Publication date: May 27, 2010Applicant: RENESAS TECHNOLOGY CORP.Inventors: Natsuki YOKOYAMA, Yoshifumi KAWAMOTO, Eiichi MURAKAMI, Fumihiko UCHIDA, Kenichi MIZUISHI, Yoshio KAWAMURA
-
Patent number: 7603194Abstract: A fabricating method for a system that includes a plurality of processing apparatuses connected to each other by an inter-apparatus transporter and a computer storing managing information of processing and transporting of semiconductor wafers. The processing apparatuses have an interface for loading and unloading a plurality of the semiconductor wafers that are contained in a carrier. The semiconductor waters are processed in processing chambers of the processing apparatuses and the result of processing is monitored. In the processing, a first carrier containing the plurality of the semiconductor wafers having been processed in the first processing apparatus is transported toward the second processing apparatus by the inter-apparatus transporter prior to unloading of a second carrier containing semiconductor wafers processed in the second processing apparatus, according to the managing information.Type: GrantFiled: May 28, 2008Date of Patent: October 13, 2009Assignee: Renesas Technology Corp.Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Publication number: 20080243293Abstract: A fabricating method for a system that includes a plurality of processing apparatuses connected to each other by an inter-apparatus transporter and a computer storing managing information of processing and transporting of semiconductor wafers. The processing apparatuses have an interface for loading and unloading a plurality of the semiconductor wafers that are contained in a carrier. The semiconductor waters are processed in processing chambers of the processing apparatuses and the result of processing is monitored. In the processing, a first carrier containing the plurality of the semiconductor wafers having been processed in the first processing apparatus is transported toward the second processing apparatus by the inter-apparatus transporter prior to unloading of a second carrier containing semiconductor wafers processed in the second processing apparatus, according to the managing information.Type: ApplicationFiled: May 28, 2008Publication date: October 2, 2008Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Patent number: 7392106Abstract: A fabricating method for a system that includes a plurality of processing apparatuses connected to each other by an inter-apparatus transporter and a computer storing managing information of processing and transporting of semiconductor wafers. The processing apparatuses have an interface for loading and unloading a plurality of the semiconductor wafers that are contained in a carrier. The semiconductor waters are processed in processing chambers of the processing apparatuses and the result of processing is monitored. In the processing, a first carrier containing the plurality of the semiconductor wafers having been processed in the first processing apparatus is transported toward the second processing apparatus by the inter-apparatus transporter prior to unloading of a second carrier containing semiconductor wafers processed in the second processing apparatus, according to the managing information.Type: GrantFiled: December 30, 2005Date of Patent: June 24, 2008Assignee: Renesas Technology Corp.Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Patent number: 7310563Abstract: A fabricating method for a system including a plurality of processing apparatuses connected to each other by an inter-apparatus transporter. The semiconductor waters are processed in the processing apparatuses and are transported to specified processing apparatuses in different time interval that are set to N times a unit time interval. Since the fabricating system includes processing apparatuses and an inter-apparatus transporter that are periodically controlled at time intervals related to a unit time, intervals related to a unit time, the scheduling of a plurality of works can be made efficiently to enhance the level of optimization, thus improving the productivity.Type: GrantFiled: December 30, 2005Date of Patent: December 18, 2007Assignee: Renesas Technology Corp.Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Patent number: 7062344Abstract: Disclosed is a fabricating system including a plurality of processing apparatuses connected to each other by means of an inter-apparatus transporter, wherein one group of semiconductor wafers are processed in processing apparatuses and other group of wafers are transported to specified processing apparatuses for a time interval from (To+T) to a time To; and another group of wafers are processed and the remaining group of wafers are transported for a time interval from (To+T) to (To+2T). Since processing apparatuses can receive at least one of works from the inter-apparatus transporter for a time interval T min, the distribution of works from the transporter to processing apparatuses is completed for the time interval T min. The transporter is emptied for each time interval T min, and works are unloaded to the emptied transporter, which makes easy the scheduling, control and management of the transporting of a plurality of works in the fabricating system.Type: GrantFiled: November 17, 2003Date of Patent: June 13, 2006Assignee: Renesas Technology Corp.Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Publication number: 20060111805Abstract: A fabricating method for a system including a plurality of processing apparatuses connected to each other by an inter-apparatus transporter. The semiconductor waters are processed in the processing apparatuses and are transported to specified processing apparatuses in different time interval that are set to N times a unit time interval. Since the fabricating system includes processing apparatuses and an inter-apparatus transporter that are periodically controlled at time intervals related to a unit time, intervals related to a unit time, the scheduling of a plurality of works can be made efficiently to enhance the level of optimization, thus improving the productivity.Type: ApplicationFiled: December 30, 2005Publication date: May 25, 2006Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Publication number: 20060111802Abstract: A fabricating method for a system including a plurality of processing apparatuses connected to each other by an inter-apparatus transporter. The semiconductor waters are processed in the processing apparatuses and are transported to specified processing apparatuses in different time interval that are set to N times a unit time interval. Since the fabricating system includes processing apparatuses and an inter-apparatus transporter that are periodically controlled at time intervals related to a unit time, intervals related to a unit time, the scheduling of a plurality of works can be made efficiently to enhance the level of optimization, thus improving the productivity.Type: ApplicationFiled: December 30, 2005Publication date: May 25, 2006Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Patent number: 6878586Abstract: A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.Type: GrantFiled: June 11, 2003Date of Patent: April 12, 2005Assignee: Renesas Technology Corp.Inventors: Shinichiro Kimura, Naotaka Hashimoto, Yoshio Sakai, Tokuo Kure, Yoshifumi Kawamoto, Toru Kaga, Eiji Takeda
-
Publication number: 20040107020Abstract: Disclosed is a fabricating system including a plurality of processing apparatuses connected to each other by means of an inter-apparatus transporter, wherein one group of semiconductor wafers are processed in processing apparatuses and other group of wafers are transported to specified processing apparatuses for a time interval from (To+T) to a time To; and another group of wafers are processed and the remaining group of wafers are transported for a time interval from (To+T) to (To+2T). Since processing apparatuses can receive at least one of works from the inter-apparatus transporter for a time interval T min, the distribution of works from the transporter to processing apparatuses is completed for the time interval T min. The transporter is emptied for each time interval T min, and works are unloaded to the emptied transporter, which makes easy the scheduling, control and management of the transporting of a plurality of works in the fabricating system.Type: ApplicationFiled: November 17, 2003Publication date: June 3, 2004Applicant: Hitachi, Ltd.Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Dynamic random access memory including a logic circuit and an improved storage capacitor arrangement
Patent number: 6700152Abstract: The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.Type: GrantFiled: August 30, 2002Date of Patent: March 2, 2004Assignee: Hitachi, Ltd.Inventors: Takuya Fukuda, Nobuyoshi Kobayashi, Yoshitaka Nakamura, Masayoshi Saito, Shinichi Fukada, Yoshifumi Kawamoto -
Publication number: 20030205751Abstract: A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.Type: ApplicationFiled: June 11, 2003Publication date: November 6, 2003Applicant: Hitachi, Ltd.Inventors: Shinichiro Kimura, Naotaka Hashimoto, Yoshio Sakai, Tokuo Kure, Yoshifumi Kawamoto, Toru Kaga, Eiji Takeda
-
Publication number: 20020195641Abstract: The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.Type: ApplicationFiled: August 30, 2002Publication date: December 26, 2002Inventors: Takuya Fukuda, Nobuyoshi Kobayashi, Yoshitaka Nakamura, Masayoshi Saito, Shinichi Fukada, Yoshifumi Kawamoto
-
Patent number: 6479899Abstract: The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.Type: GrantFiled: April 24, 1998Date of Patent: November 12, 2002Assignee: Hitachi, Ltd.Inventors: Takuya Fukuda, Nobuyoshi Kobayashi, Yoshitaka Nakamura, Masayoshi Saito, Shinichi Fukada, Yoshifumi Kawamoto
-
Patent number: 6432769Abstract: The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.Type: GrantFiled: August 22, 2000Date of Patent: August 13, 2002Assignee: Hitachi, Ltd.Inventors: Takuya Fukuda, Nobuyoshi Kobayashi, Yoshitaka Nakamura, Masayoshi Saito, Shinichi Fukada, Yoshifumi Kawamoto
-
Patent number: 6355517Abstract: A semiconductor memory having a capacitor formed by utilizing a groove formed in a semiconductor substrate and an insulated gate field effect transistor and suppressing expansion of a depletion layer from the groove, and a method for fabricating the same are disclosed. An area occupied by each memory cell can be made very small and a distance between the memory cells can also be made very small, accordingly, high density integration is facilitated.Type: GrantFiled: December 23, 1993Date of Patent: March 12, 2002Assignee: Hitachi, Ltd.Inventors: Hideo Sunami, Tokuo Kure, Yoshifumi Kawamoto
-
Publication number: 20010008288Abstract: A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other, thereby enabling the storage capacity portions to be arranged very densely and a sufficiently large capacity to be maintained with very small cell areas. Since the storage capacity portions are formed even on the bit lines, the bit lines are shielded, so that the capacity decreases between the bit lines and, hence, the memory array noise decreases. It is also possible to design the charge storage capacity portion so that a part of thereof has a form of a wall substantially vertical to the substrate in order to increase the capacity.Type: ApplicationFiled: December 18, 2000Publication date: July 19, 2001Applicant: Hitachi, Ltd.Inventors: Shinichiro Kimura, Naotaka Hashimoto, Yoshio Sakai, Tokuo Kure, Yoshifumi Kawamoto, Toru Kaga, Eiji Takeda
-
Patent number: 6099598Abstract: Disclosed is a fabricating system including a plurality of processing apparatuses connected to each other by means of an inter-apparatus transporter, wherein one group of semiconductor wafers are processed in processing apparatuses and other group of wafers are transported to specified processing apparatuses for a time interval from (To+T) to a time To; and another group of wafers are processed and the remaining group of wafers are transported for a time interval from (To+T) to (To+2T). Since processing apparatuses can receive at least one of works from the inter-apparatus transporter for a time interval T min, the distribution of works from the transporter to processing apparatuses is completed for the time interval T min. The transporter is emptied for each time interval T min, and works are unloaded to the emptied transporter, which makes easy the scheduling, control and management of the transporting of a plurality of works in the fabricating system.Type: GrantFiled: June 29, 1998Date of Patent: August 8, 2000Assignee: Hitachi, Ltd.Inventors: Natsuki Yokoyama, Yoshifumi Kawamoto, Eiichi Murakami, Fumihiko Uchida, Kenichi Mizuishi, Yoshio Kawamura
-
Patent number: 5981399Abstract: A semiconductor device fabrication apparatus having multiple processing chambers for different processes, where a substrate is carried in and out in a sophisticated manner, with their different internal ambient conditions being retained, so that the substrate is free from contamination, thereby manufacturing high-quality semiconductor devices at high throughput. The apparatus includes a movable buffer chamber having a wafer carriage means within a transfer chamber which faces a process chamber, an evacuation means which evacuates of gas the buffer chamber, transfer chamber and process chamber independently, a gas feed means, and a control means.Type: GrantFiled: August 14, 1997Date of Patent: November 9, 1999Assignee: Hitachi, Ltd.Inventors: Yoshio Kawamura, Tatuharu Yamamoto, Shigeo Moriyama, Yoshifumi Kawamoto, Natsuki Yokoyama, Fumihiko Uchida, Minoru Hidaka, Miyako Matsui
-
Patent number: RE38296Abstract: A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.Type: GrantFiled: March 23, 1995Date of Patent: November 4, 2003Assignee: Hitachi, Ltd.Inventors: Noboru Moriuchi, Yoshiki Yamaguchi, Toshihiko Tanaka, Norio Hasegawa, Yoshifumi Kawamoto, Shin-ichiro Kimura, Toru Kaga, Tokuo Kure