Patents by Inventor Yoshiharu Kato

Yoshiharu Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210043739
    Abstract: Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen. The semiconductor substrate includes an N type drift region, an N type emitter region that has a higher carrier concentration than that in the drift region, a P type base region, a P type collector region provided to be in contact with a lower surface of the semiconductor substrate, and an N type buffer region that is provided between the collector region and the drift region, and has a higher carrier concentration than that in the drift region, and the hydrogen containing region is included in the buffer region.
    Type: Application
    Filed: October 22, 2020
    Publication date: February 11, 2021
    Inventors: Yoshiharu KATO, Toru AJIKI, Tohru SHIRAKAWA, Misaki TAKAHASHI, Kaname MITSUZUKA, Takashi YOSHIMURA, Yuichi ONOZAWA, Hiroshi TAKISHITA, Soichi YOSHIDA
  • Patent number: 10600897
    Abstract: In an edge termination region, in a carrier drawing region between an active region and a gate runner part, a p+-type contact region is provided in a surface region of a p-type well region. In the carrier drawing region, in second contact holes formed an interlayer insulating film, a contact plug is embedded in each via the barrier metal, and contacts of the p+-type contact region and the barrier metal at an emitter electric potential are formed. The contacts of the carrier drawing region are disposed in a striped layout extending along an outer periphery of the active region; the contacts surround the active region. A contact resistance of the contacts of the carrier drawing region is higher than a contact resistance of a contact (emitter contact) of a MOS gate.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: March 24, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Tohru Shirakawa, Yoshiharu Kato
  • Patent number: 10545866
    Abstract: Disclosed is an improved approach to implement training for memory technologies, where a data valid window is re-determined using boundary information for a new data valid window. The information obtained for the new location of the first edge is used to minimize the computational resources required to identify the location of the second edge. This greatly improves the efficiency of the process to perform the re-training.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: January 28, 2020
    Assignee: Cadence Design Systems, Inc.
    Inventors: Yoshiharu Kato, Manas Lahon, Sandeep Brahmadathan
  • Publication number: 20200020579
    Abstract: To provide a semiconductor device that has barrier metal and has a small variation in a threshold voltage. A semiconductor device is provided, including a semiconductor substrate, an interlayer dielectric film arranged on an upper surface of the semiconductor substrate, a titanium layer provided on the interlayer dielectric film, and a titanium nitride layer provided on the titanium layer, where the interlayer dielectric film is provided with an opening that exposes a part of the upper surface of the semiconductor substrate, the titanium layer and the titanium nitride layer are also provided within the opening, and the titanium layer arranged in contact with the semiconductor substrate and on a bottom portion of the opening is entirely titanium-silicided.
    Type: Application
    Filed: June 3, 2019
    Publication date: January 16, 2020
    Inventors: Yoshiharu KATO, Tohru SHIRAKAWA
  • Patent number: 10304948
    Abstract: To provide a semiconductor device in which an edge termination structure can be made smaller easily. A semiconductor device is provided, the semiconductor device including an active region and an edge termination structure formed on a front surface side of a semiconductor substrate, wherein an edge termination structure has a guard ring provided surrounding an active region on a front surface side of a semiconductor substrate, a first field plate provided on a front surface side of a guard ring, an electrode unit provided on a front surface side of a first field plate, a second field plate provided between a first field plate and a electrode unit, and a conductive connecting unit which mutually electrically connects a first field plate, an electrode unit, a second field plate, and a guard ring.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: May 28, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yoshiharu Kato, Hidenori Takahashi
  • Publication number: 20190140084
    Abstract: In an edge termination region, in a carrier drawing region between an active region and a gate runner part, a p+-type contact region is provided in a surface region of a p-type well region. In the carrier drawing region, in second contact holes formed an interlayer insulating film, a contact plug is embedded in each via the barrier metal, and contacts of the p+-type contact region and the barrier metal at an emitter electric potential are formed. The contacts of the carrier drawing region are disposed in a striped layout extending along an outer periphery of the active region; the contacts surround the active region. A contact resistance of the contacts of the carrier drawing region is higher than a contact resistance of a contact (emitter contact) of a MOS gate.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 9, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Tohru SHIRAKAWA, Yoshiharu KATO
  • Publication number: 20180269315
    Abstract: A semiconductor device is provided, wherein a semiconductor substrate includes: a first trench portion provided from a front surface of the semiconductor substrate to a predetermined depth, and having a longer portion and a shorter portion as seen from above; and a first conductivity-type floating semiconductor region at least partially exposed on the front surface and surrounded by the first trench portion, an interlayer insulating film has openings to electrically connect an emitter electrode and the floating semiconductor region, the openings include: a first opening closest to an outer end of the floating semiconductor region in a direction parallel to the longer portion; and a second opening second closest to the outer end in the direction parallel to the longer portion, and a distance between the first opening and the second opening is shorter than a distance between any adjacent two of the openings other than the first opening.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 20, 2018
    Inventors: Yoshiharu KATO, Hidenori TAKAHASHI, Tatsuya NAITO
  • Patent number: 9906849
    Abstract: Provided is a sound-transmitting waterproof film having waterproof performance and stable sound-transmitting performance in a wide tonal range. The sound-transmitting waterproof film includes a porous film of a synthetic resin, and has a water pressure resistance of 10 to 400 kPa in accordance with a JIS L 1092 method B (a high water pressure method) and has an acoustic loss of less than 10 dB at a frequency of 1 kHz, an acoustic loss of less than 5 dB at a frequency of 2 kHz, and an acoustic loss of less than 5 dB at a frequency of 5 kHz in sound-transmitting performance tests.
    Type: Grant
    Filed: January 8, 2015
    Date of Patent: February 27, 2018
    Assignee: Seiren Co., Ltd.
    Inventors: Yoshiharu Kato, Katsumi Sakamoto, Yoshiyuki Yamada, Naoya Kishimoto
  • Publication number: 20170110560
    Abstract: To provide a semiconductor device in which an edge termination structure can be made smaller easily. A semiconductor device is provided, the semiconductor device including an active region and an edge termination structure formed on a front surface side of a semiconductor substrate, wherein an edge termination structure has a guard ring provided surrounding an active region on a front surface side of a semiconductor substrate, a first field plate provided on a front surface side of a guard ring, an electrode unit provided on a front surface side of a first field plate, a second field plate provided between a first field plate and a electrode unit, and a conductive connecting unit which mutually electrically connects a first field plate, an electrode unit, a second field plate, and a guard ring.
    Type: Application
    Filed: December 26, 2016
    Publication date: April 20, 2017
    Inventors: Yoshiharu KATO, Hidenori TAKAHASHI
  • Publication number: 20170091307
    Abstract: A creativity aiding server selects nodes from among a plurality of nodes included in a tree diagram that is generated according to nodes each representing an opinion created by each user to derive a solution to a problem dealt with in a discussion and links each representing relevance between the nodes, by tracking links backward from a solution node representing the solution to an assignment node representing an assignment, the selected nodes being included between the solution node and the assignment node. The creativity aiding server calculates a degree of contribution made by each of the selected nodes in deriving the solution, by using types of the selected nodes and types of the links. The creativity aiding server identifies one or more of the nodes of which the degree of contribution is equal to or higher than a threshold value.
    Type: Application
    Filed: September 16, 2016
    Publication date: March 30, 2017
    Inventors: Yoshiharu Kato, Masafumi Yano
  • Publication number: 20170091623
    Abstract: A creativity support server extracts a node that is generated by a user from a tree diagram that is generated according to nodes each representing an opinion created by each user to derive a solution to a problem dealt with in a discussion and links each representing relevance between the nodes. The creativity support server classifies the extracted node according to dependency between the extracted node and other nodes included in the tree diagram. The creativity support server specifies a character of the user according to result of the classifying.
    Type: Application
    Filed: August 29, 2016
    Publication date: March 30, 2017
    Inventors: Yoshiharu Kato, Masafumi Yano
  • Publication number: 20160337737
    Abstract: Provided is a sound-transmitting waterproof film having waterproof performance and stable sound-transmitting performance in a wide tonal range. The sound-transmitting waterproof film includes a porous film of a synthetic resin, and has a water pressure resistance of 10 to 400 kPa in accordance with a JIS L 1092 method B (a high water pressure method) and has an acoustic loss of less than 10 dB at a frequency of 1 kHz, an acoustic loss of less than 5 dB at a frequency of 2 kHz, and an acoustic loss of less than 5 dB at a frequency of 5 kHz in sound-transmitting performance tests.
    Type: Application
    Filed: January 8, 2015
    Publication date: November 17, 2016
    Inventors: Yoshiharu KATO, Katsumi SAKAMOTO, Yoshiyuki YAMADA, Naoya KISHIMOTO
  • Patent number: 9206546
    Abstract: A moisture-permeable waterproof fabric which has a well-balanced combination of moisture permeability and waterproofing properties and has excellent strength, in particular, tensile strength, is provided without increasing environmental burden. A synthetic-polymer solution comprising a synthetic polymer consisting mainly of a polyurethane, fine inorganic particles, and a polar organic solvent is applied to one surface of a fibrous fabric and then brought into contact with a gaseous phase in which waterdrops having an average particle diameter of 1-30 ?m have been evenly dispersed, thereby making the synthetic polymer semisolid. The fabric is then immersed in water to completely solidify the polymer and thereby obtain a moisture-permeable waterproof fabric comprising the fibrous fabric and, united to one surface thereof, a microporous film of a single-layer structure comprising the synthetic polymer consisting mainly of a polyurethane (the number of micropores having a pore diameter of 0.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: December 8, 2015
    Assignee: SEIREN CO., LTD.
    Inventors: Yoshiharu Kato, Katsumi Sakamoto
  • Patent number: 8928397
    Abstract: A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.
    Type: Grant
    Filed: August 1, 2012
    Date of Patent: January 6, 2015
    Assignee: Spansion LLC
    Inventors: Kazushi Kodera, Yoshiharu Kato
  • Patent number: 8878336
    Abstract: A fuse includes a first conductor, an insulating film on the first conductor, a second conductor on the insulating film, a first plug coupled to the first conductor, a second plug and a third plug each coupled to the second conductor, and a cover film formed on the second conductor and having tensile strength.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: November 4, 2014
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Makoto Yasuda, Kazuyoshi Arimura, Yoshiharu Kato
  • Patent number: 8711643
    Abstract: A memory interface circuit includes a gating circuit that starts detection of a logic level of a data strobe signal in accordance with a data read command. A clamp circuit clamps the data strobe signal to a first logic level after the data read command is issued. A detection circuit detects a logic level of the data strobe signal, which is driven by the memory, in accordance with the data read command.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: April 29, 2014
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Yoshiharu Kato
  • Patent number: 8560993
    Abstract: An object is to provide a semiconductor device in which it is possible to determine whether or not a minute delay time given by a delay circuit is within a specified value or not, and a method of testing the semiconductor device. In response to a data strobe signal TDQS for testing, the delay circuits DC0 and DC1 produce delay data strobe signals IDQS0 and IDQS1 delayed by delay times DT0 and DT1. Outputted as a reverse signal from the inverter INV0, is a reverse data strobe signal RIDQS0 in response to the delay data strobe signal IDQS0, and delayed by an allowable delay time IT. Inputted into the NAND gate ND0, are the reverse data strobe signal RIDQS0 and the delay data strobe signal IDQS1. When, in comparison with the phase of the delay data strobe signal IDQS0, the phase of the delay data strobe signal IDQS1 is delayed by the allowable delay time IT or more, a pulse signal PL0 is not outputted from the NAND gate ND0.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: October 15, 2013
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Yoshiharu Kato
  • Publication number: 20130049165
    Abstract: A fuse includes a first conductor, an insulating film on the first conductor, a second conductor on the insulating film, a first plug coupled to the first conductor, a second plug and a third plug each coupled to the second conductor, and a cover film formed on the second conductor and having tensile strength.
    Type: Application
    Filed: August 21, 2012
    Publication date: February 28, 2013
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Makoto Yasuda, Kazuyoshi Arimura, Yoshiharu Kato
  • Publication number: 20130038385
    Abstract: A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.
    Type: Application
    Filed: August 1, 2012
    Publication date: February 14, 2013
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Kazushi Kodera, Yoshiharu Kato
  • Publication number: 20120322328
    Abstract: Disclosed is a moisture-permeable waterproof fabric which is produced by using a plant-based material and has equivalent or superior performance as compared to conventional petroleum-based polyurethane resins. The moisture-permeable waterproof fabric comprises, on at least one surface thereof, a porous resin film composed of a polyurethane resin containing 5 to 80% by weight of a sebacic acid-based polyol component produced from a plant-based sebacic acid, and has an A-1 moisture permeability and a B-1 moisture permeably both of which are not less than 5,000 g/m2ยท24 h and a water pressure resistance of not lower than 5,000 mmH2O.
    Type: Application
    Filed: February 22, 2011
    Publication date: December 20, 2012
    Applicant: SEIREN CO., LTD.
    Inventors: Yoshiyuki Yamada, Katsumi Sakamoto, Yoshiharu Kato