Abstract: An electronic device includes a substrate and a wiring. The wiring is provided above the substrate and includes a Ni—B layer and a copper layer provided on the Ni—B layer. The Ni—B layer contains 3.2% by weight to 5% by weight of boron.

Abstract: A resin board includes: a resin layer and a through electrode buried in the resin layer, wherein the through electrode has an electrode surface exposed from a front surface or a back surface of the resin layer and a lateral surface, and the electrode surface and the lateral surface form an obtuse angle.

Abstract: An electronic component includes: a conductor portion containing a first element; a compound layer disposed around the conductor portion and containing a second element and a third element which are different from the first element; and an isolation layer, disposed between the conductor portion and the compound layer and containing a fourth element which is different from the first element, the second element, and the third element, to isolate the first element in the conductor portion from the second element and the third element outside the conductor portion.

Abstract: A manufacturing method for a high pressure tank includes preparing a liner including a cylindrical body portion and a pair of side end portions, forming a reinforcing layer by winding fiber-reinforced resin around an outer peripheral surface of the liner, carrying out shot peening by shooting a shot material towards an inner periphery region of a boundary between the body portion and each of the side end portions, and carrying out autofrettage after the reinforcing layer is formed and the shot peening is carried out. The autofrettage is carried out by applying internal pressure to the liner such that the liner is plastically deformed and then eliminating the internal pressure such that compression stress is applied to the liner.

Abstract: A modularized externally-driven joint structure can be used for general purposes. An externally-driven joint structure: includes a shaft member that extends in an axial direction; and a number of rotatable members that are arranged along the axial direction, and are coupled with each other by the shaft member in an axially rotatable manner. Each of the rotatable members includes a pair of face portions that face each other in the axial direction, a side wall portion that is arranged along the outer circumferential edges of the pair of face portions, and at least one coupling portion that is arranged at the face portions or the side wall portion, and is coupled with a link member constituting a link of a robot.

Abstract: A linear vernier motor includes a stator and a mover. The stator extends in a first direction. The mover extends in the first direction and a pole interval is different from that of the stator. At least one of the stator and the mover includes: a plurality of permanent magnets arranged in the first direction and a plurality of yokes arranged in the first direction. Each of the plurality of yokes is arranged between adjacent permanent magnets. The plurality of permanent magnets is magnetized to the first direction and magnetization orientations of adjacent permanent magnets are opposite to each other.

Abstract: A resin board includes: a resin layer and a through electrode buried in the resin layer, wherein the through electrode has an electrode surface exposed from a front surface or a back surface of the resin layer and a lateral surface, and the electrode surface and the lateral surface form an obtuse angle.

Abstract: [Object] To provide a compact, high-output actuator device allowing force control. [Solution] An actuator device 1000 includes an electromagnetic coil member 110 provided over a prescribed width on an outer circumference of a cylinder 100, and a movable element 200 slidable as a piston in the cylinder 100. The movable element 200 has a magnetic member 202, and is moved relatively by excitation of the electromagnetic coil member 110. Fluid is supplied to first and second chambers 106a and 106b such that when the movable element 200 is to be moved relatively, the movable element 200 is driven in the same direction.

Abstract: An electronic device includes: a substrate; a Cu-containing wiring layer formed over the substrate; a barrier metal layer that covers a surface of the Cu-containing wiring layer and suppresses diffusion of Cu; and a coating insulating layer that covers the barrier metal layer, wherein the barrier metal layer has a void that does not reach the Cu-containing wiring layer, and the void is filled with the coating insulating layer.

Abstract: A semiconductor device has a structure including a substrate, a first insulating film formed over a part of a principal plane of the substrate, a conductive portion formed over a surface of the first insulating film, and a second insulating film which covers the principal plane of the substrate, the first insulating film, and the conductive portion and whose moisture resistance is higher than moisture resistance of the first insulating film. The first insulating film is placed between the substrate and the conductive portion to prevent the generation of parasitic capacitance. The first insulating film is covered with the second insulating film whose moisture resistance is higher than the moisture resistance of the first insulating film. The second insulating film prevents the first insulating film from absorbing moisture.

Abstract: A resist composition includes: a solvent; and a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, wherein a portion of the resist composition irradiated with an energy radiation is insoluble in a developing solution.

Abstract: After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

Abstract: After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

Abstract: A substrate processing apparatus comprising a processing vessel evacuated by an evacuation system and accommodating therein a stage configured to hold a substrate; a superheated steam generator configured to supply a superheated steam to said processing vessel; a gas supplying apparatus supplying an inert gas or a reducing gas to said processing vessel; an oxygen concentration level measuring device configured to measure an oxygen concentration level in said processing vessel; and a heating mechanism provided in said stage and configured to heat said substrate on said stage to a temperature of said superheated steam to which said substrate is exposed, wherein said superheated steam generator supplies said superheated steam to said processing vessel with a temperature higher than a temperature of said substrate on the stage.

Abstract: A method of forming an interconnection structure includes forming an opening in an insulation film by a dry etching process that uses an etching gas containing fluorine; cleaning a bottom surface and a sidewall surface of the opening by exposing to a superheated steam; covering the bottom surface and the sidewall surface of the opening with a barrier metal film; depositing a conductor film on the insulation film via the barrier metal film to fill the opening with the conductor film; forming an interconnection pattern by the conductor film in the opening by polishing the conductor film and the barrier metal film underneath the conductor film by a chemical mechanical polishing process until a surface of the insulation film is exposed.

Abstract: A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

Abstract: A resist composition includes: a solvent; and a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, wherein a portion of the resist composition irradiated with an energy radiation is insoluble in a developing solution.

Abstract: A semiconductor device has a structure including a substrate, a first insulating film formed over a part of a principal plane of the substrate, a conductive portion formed over a surface of the first insulating film, and a second insulating film which covers the principal plane of the substrate, the first insulating film, and the conductive portion and whose moisture resistance is higher than moisture resistance of the first insulating film. The first insulating film is placed between the substrate and the conductive portion to prevent the generation of parasitic capacitance. The first insulating film is covered with the second insulating film whose moisture resistance is higher than the moisture resistance of the first insulating film. The second insulating film prevents the first insulating film from absorbing moisture.

Abstract: A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

Abstract: A linear actuator includes a coil portion and a shaft portion. The coil portion includes a plurality of coils respectively applied with AC currents having different phases from one another. The shaft portion passes through an inside of the plurality of coils. The shaft portion includes: a plurality of permanent magnets and a plurality of intermediate members. The plurality of permanent magnets is arranged along a central axis C such that opposite magnetization directions face to each other in a direction of the central axis C. Each of the plurality of intermediate members is arranged between adjacent two of the plurality of permanent magnets. A saturation magnetic flux density of each of the plurality of intermediate members is higher than a saturation magnetic flux density of each of the plurality of permanent magnets.