Abstract: An occupant position detection system includes an imaging device configured to capture an image of an occupant seated on a seat provided in an interior of a vehicle, a sensor provided on the seat, a first calculating unit configured to calculate a first position of the occupant from the image captured by the imaging device, a second calculating unit configured to calculate a second position of the occupant from a detection result of the sensor, an occupant position calculating unit configured to calculate an occupant position by fusing the first position and the second position, and an output unit configured to output information on the occupant position calculated by the occupant position calculating unit, to a safety device.

Abstract: A temperature environment regulating system includes an in-vehicle temperature conditioner, a thermal sensation estimating section, a preference estimating section, a preference memory section, and a control section. The in-vehicle temperature conditioner regulates passenger-compartment temperature environment in a vehicle. The thermal sensation estimating section estimates thermal sensation, which is an indicator representing how the user senses in-vehicle temperature environment. The preference estimating section estimates temperature preference of the user based on a temporal change in the thermal sensation. The control section controls the in-vehicle temperature conditioner based on the temperature preference memorized by the preference memory section.

Abstract: Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode.

Abstract: Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.

Abstract: An occupant position detection system includes an imaging device configured to capture an image of an occupant seated on a seat provided in an interior of a vehicle, a sensor provided on the seat, a first calculating unit configured to calculate a first position of the occupant from the image captured by the imaging device, a second calculating unit configured to calculate a second position of the occupant from a detection result of the sensor, an occupant position calculating unit configured to calculate an occupant position by fusing the first position and the second position, and an output unit configured to output information on the occupant position calculated by the occupant position calculating unit, to a safety device.

Abstract: A temperature environment regulating system includes an in-vehicle temperature conditioner, a thermal sensation estimating section, a preference estimating section, a preference memory section, and a control section. The in-vehicle temperature conditioner regulates passenger-compartment temperature environment in a vehicle. The thermal sensation estimating section estimates thermal sensation, which is an indicator representing how the user senses in-vehicle temperature environment. The preference estimating section estimates temperature preference of the user based on a temporal change in the thermal sensation. The control section controls the in-vehicle temperature conditioner based on the temperature preference memorized by the preference memory section.

Abstract: Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.

Abstract: Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode.

Abstract: Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode.

Abstract: Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode.

Abstract: In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.

Abstract: A semiconductor device having a first rectangular chip on which wires, electrode pads and chip mounting area are provided, a first dame formed on the first rectangular chip around the electrode pads and the chip mounting area so as to cover the wires and an under fill formed by filling liquid resin between a second rectangular chip mounted on the chip mounting area in a flip-chip manner and the first rectangular chip.

Abstract: Respective attracting openings of a bonding head are disposed so as to avoid joining regions at which bump electrodes (obverse electrodes) of a semiconductor chip are joined with bump electrodes of a package substrate. Bump electrodes (reverse electrodes) that are connected to the bump electrodes are provided at a reverse side of the semiconductor chip at positions opposing the bump electrodes. Because the attracting openings do not overlap the joining regions, the bump electrodes (reverse electrodes) are not suctioned at the joining regions.

Abstract: When there is an extremely low ambient temperature, an electronic control unit controls operation of a circulation path for coolant water in such a manner that, after starting of an engine, the coolant water is supplied from the engine first to a throttle valve and an EGR valve and then to an oil warmer for a transmission. This solves a failure problem in the throttle valve and the EGR valve caused by frost formation at an early stage. As a result, desired operating performance of the vehicle is quickly ensured and heat management in the vehicle is carried out in a desired manner when there is an extremely low ambient temperature.

Abstract: The invention provides a semiconductor device including a rectangular chip provided on a mounting region of a substrate, a liquid resin layer provided under the rectangular chip and on a side surface of the chip, and a plurality of dams formed on the substrate so as to extend along the side surface of the rectangular chip. The configuration allows the semiconductor device to be provided with the substrate having a reduced size which is achieved by preventing a liquid resin from flowing out.

Abstract: A method of producing a semiconductor device includes: a dicing step of dicing a wafer member using a dicing blade to form a cut portion in the wafer member, in which the wafer member is formed of a wafer portion, a glass substrate, and an adhesive layer for bonding the wafer portion and the glass substrate in a thickness direction of the wafer member so that the cut portion penetrates the wafer portion and the adhesive layer and reaches a part of the glass substrate; and an individual piece dividing step of dividing the wafer member into a plurality of semiconductor devices with the cut portion as a fracture initiation portion.

Abstract: In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.

Abstract: When there is an extremely low ambient temperature, an electronic control unit controls operation of a circulation path for coolant water in such a manner that, after starting of an engine, the coolant water is supplied from the engine first to a throttle valve and an EGR valve and then to an oil warmer for a transmission. This solves a failure problem in the throttle valve and the EGR valve caused by frost formation at an early stage. As a result, desired operating performance of the vehicle is quickly ensured and heat management in the vehicle is carried out in a desired manner when there is an extremely low ambient temperature.

Abstract: Respective attracting openings of a bonding head are disposed so as to avoid joining regions at which bump electrodes (obverse electrodes) of a semiconductor chip are joined with bump electrodes of a package substrate. Bump electrodes (reverse electrodes) that are connected to the bump electrodes are provided at a reverse side of the semiconductor chip at positions opposing the bump electrodes. Because the attracting openings do not overlap the joining regions, the bump electrodes (reverse electrodes) are not suctioned at the joining regions.

Abstract: Respective attracting openings of a bonding head are disposed so as to avoid joining regions at which bump electrodes (obverse electrodes) of a semiconductor chip are joined with bump electrodes of a package substrate. Bump electrodes (reverse electrodes) that are connected to the bump electrodes are provided at a reverse side of the semiconductor chip at positions opposing the bump electrodes. Because the attracting openings do not overlap the joining regions, the bump electrodes (reverse electrodes) are not suctioned at the joining regions.