Abstract: According to one embodiment, a magnetic memory puts a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetic domain of a first layer of a magnetic memory line, into the first layer, based on a value of data and the magnetization direction of the first layer. When receiving a first command, the magnetic memory puts a first additional magnetic domain and a second additional magnetic domain having a magnetization direction opposite to the first additional magnetic domain into the magnetic memory line. When receiving a second command, the magnetic memory read the first and second additional magnetic domains to determine the magnetization direction of the first magnetic domain.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes a plurality of blocks each including a plurality of layers functioning as a plurality of stages of a shift register, and performs write and read of data by a last-in first-out method. The layers of each block are logically partitioned into a plurality of pages each including a set of adjacent layers. The controller writes a plurality of data portions to which error correction codes are added, to a write destination block. The controller changes a code amount of an error correction code added to a first data portion to be written, on the basis of a position of a page in the write destination block to which the first data portion is to be written.

Abstract: A magnetic memory included a conductive line that extends in a first direction along a substrate. A first columnar body is in a memory cell array region of the substrate and extends in a second direction from the substrate. A first end of the first columnar body contacts the conductive line. The first columnar body is comprised of a first magnetic material and has magnetic domains adjacent to one another along a length of the first columnar body in the second direction. A second columnar body is in a peripheral region of the substrate and extending in the second direction from the substrate. A first end of the second columnar body contacts the conductive line, and a second end is connected to a control circuit. The second columnar body also is comprised of the first magnetic material.

Abstract: According to an embodiment, a magnetic storage device includes a memory unit, a current supply circuit, a switch, and a controller. The memory unit includes a magnetic member and a switch element. The switch element is connected in series to the magnetic member, and changes to an on state in a case where a voltage equal to or larger than a predetermined value is applied in an off state. The current supply circuit supplies a current to the memory unit. The switch electrically connects or disconnects the current supply circuit and the memory unit. The controller applies a voltage for changing the switch element from the off state to the on state to the memory unit with the switch in a disconnected state, and sets the switch to be in a connected state after the switch element changes to the on state.

Abstract: Provided are an endoscope and a hardness adjustment device configured so that an arrangement space of built-in components in an operation portion can be ensured and that burden on a coil spring and a wire can be reduced. In an operation portion, a retained portion of a coil spring unit is retained at a first radial position by a coil spring holder as a first retainer, and a base end portion of a wire unit is retained at a second radial position by a wire holder as a second retainer. A base end portion of the coil spring unit is retained at a third radial position by a coil spring contact portion as a third retainer.

Abstract: According to one embodiment, there is provided a magnetic memory including a magnetic material column, a shift control circuit, and a write control circuit. The shift control circuit is connected to the magnetic material column. The write control circuit is configured to cause a current to flow through a write line passing near one end of the magnetic material column if writing data having a first value into the magnetic material column, and cause no current to flow through the write line if writing data having a second value into the magnetic material column.

Abstract: A magnetic memory included a conductive line that extends in a first direction along a substrate. A first columnar body is in a memory cell array region of the substrate and extends in a second direction from the substrate. A first end of the first columnar body contacts the conductive line. The first columnar body is comprised of a first magnetic material and has magnetic domains adjacent to one another along a length of the first columnar body in the second direction. A second columnar body is in a peripheral region of the substrate and extending in the second direction from the substrate. A first end of the second columnar body contacts the conductive line, and a second end is connected to a control circuit. The second columnar body also is comprised of the first magnetic material.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes a plurality of blocks each including a plurality of layers functioning as a plurality of stages of a shift register, and performs write and read of data by a last-in first-out method. The layers of each block are logically partitioned into a plurality of pages each including a set of adjacent layers. The controller writes a plurality of data portions to which error correction codes are added, to a write destination block. The controller changes a code amount of an error correction code added to a first data portion to be written, on the basis of a position of a page in the write destination block to which the first data portion is to be written.

Abstract: According to an embodiment, a magnetic storage device includes a memory unit, a current supply circuit, a switch, and a controller. The memory unit includes a magnetic member and a switch element. The switch element is connected in series to the magnetic member, and changes to an on state in a case where a voltage equal to or larger than a predetermined value is applied in an off state. The current supply circuit supplies a current to the memory unit. The switch electrically connects or disconnects the current supply circuit and the memory unit. The controller applies a voltage for changing the switch element from the off state to the on state to the memory unit with the switch in a disconnected state, and sets the switch to be in a connected state after the switch element changes to the on state.

Abstract: According to an embodiment, a magnetic storage device includes a magnetic member, a switch element, a shift control circuit, a base current control circuit, and a controller. The magnetic member includes a portion extending in a direction. The switch element is connected in series to the magnetic member, and maintains an on state in a case where a current equal to or larger than a holding current value continues to flow in the on state. The shift control circuit shifts magnetic domains retained in the magnetic member. The controller causes the base current control circuit to supply a base current to the switching element and causes the shift control circuit to supply a shift pulse current a plurality of times.

Abstract: According to one embodiment, there is provided a magnetic memory including a magnetic material column, a shift control circuit, and a write control circuit. The shift control circuit is connected to the magnetic material column. The write control circuit is configured to cause a current to flow through a write line passing near one end of the magnetic material column if writing data having a first value into the magnetic material column, and cause no current to flow through the write if writing data having a second value into the magnetic material column.

Abstract: An endoscope aid attachably and detachably attached to a treatment tool insertion channel of an endoscope includes a flexible tubular-member longer than a total length of the treatment tool insertion channel. The tubular-member has a treatment tool insertion pipe line and a suction pipe line. A distal end part of the tubular-member has a sliding contact part that has an outer periphery coming in sliding contact with an inner peripheral surface of an outlet portion of the treatment tool insertion channel maintained in the shape of a straight pipe irrespective of bending of a bending part of the endoscope and is disposed in the outlet portion, and an extending part that extends from the sliding contact part to a distal end side and is disposed to protrude from an outlet of the treatment tool insertion channel. A distal-end-side opening of the suction pipe line is provided in the extending part.

Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

Abstract: A magnetic storage device includes a magnetic storage thin line including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable, a magnetoresistance effect element having a first resistance according to the magnetization direction of the first magnetic domain or a second resistance according to the magnetization direction of the second magnetic domain, and a read circuit that compares the first resistance of the magnetoresistance effect element with the second resistance of the magnetoresistance effect element. The read circuit outputs first data when the first resistance and the second resistance correspond to the same low or high resistance state and outputs second data when the first resistance and the second resistance correspond to different low/high resistance states.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.

Abstract: According to an aspect of the invention, an information processing apparatus includes a monitoring unit and a control unit. The monitoring unit monitors movement of each document being correlated with a score indicating how much the document includes pieces of personal information. The control unit controls the movement of the document monitored by the monitoring unit when a relationship among an importance degree of personal information of a movement source, an importance degree of personal information of a movement destination, and the score of the document which is a target to be moved corresponds to a predetermined relationship in a case where the document having the score larger than a predetermined threshold value or greater than or equal to the predetermined threshold value is set to the target to be moved.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

Abstract: A magnetic storage device includes a magnetic storage thin line including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable, a magnetoresistance effect element having a first resistance according to the magnetization direction of the first magnetic domain or a second resistance according to the magnetization direction of the second magnetic domain, and a read circuit that compares the first resistance of the magnetoresistance effect element with the second resistance of the magnetoresistance effect element. The read circuit outputs first data when the first resistance and the second resistance correspond to the same low or high resistance state and outputs second data when the first resistance and the second resistance correspond to different low/high resistance states.

Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.