Abstract: The present invention provides a nitride semiconductor substrate suitable for a high frequency device. The nitride semiconductor substrate has a substrate, a buffer layer made of group 13 nitride semiconductors, and an active layer made of group 13 nitride semiconductors in this order, wherein the substrate is composed of a first substrate made of polycrystalline aluminum nitride, and a second substrate made of Si single crystal having a specific resistance of 100 ?·cm or more, formed on the first substrate, the average particle size of AlN constituting the first substrate is 3 to 9 ?m, and preferably, the second substrate grown by the MCZ method has an oxygen concentration of 1E+18 to 9E+18 atoms/cm3 and a specific resistance of 100 to 1000 ?·cm.

Abstract: Colorimeter having first and second illumination units disposed symmetrically to a reference line in a prescribed plane, first and second light-receiving parts disposed symmetrically to the reference line in the prescribed plane, a calculation unit for determining color information about a measurement object, and an opposing wall that opposes the measurement object when it is measured. The opposing wall has an abutting part that abuts the measurement object when it is measured. The abutting part has a pair of first abutting parts disposed on two sides of a measurement opening to flank the measurement opening; and a pair of second abutting parts disposed on an orthogonal line orthogonal to a first-abutting-part connection line that connects the pair of first abutting parts to each other, the pair of second abutting parts being disposed on two sides of the first-abutting-part connection line to flank the first-abutting-part connection line.

Abstract: The characteristic of Fe-doped HEMTs is improved. The invention provides a nitride semiconductor substrate having a substrate, a buffer layer made of nitride semiconductors on the substrate, and an active layer composed of nitride semiconductor layers on the buffer layer; the buffer layer containing Fe, the Fe having a concentration profile in which the Fe concentration increases monotonically and gradually in the thickness direction of the buffer layer from an interface between the substrate and the buffer layer, has a maximum value within 2×1017 to 1.1×1020 atoms/cm3 inclusive, and decreases monotonically and gradually toward an interface between the buffer layer and the active layer, and the point of the maximum value being within ±50 nm from the midpoint in the thickness direction of the buffer layer, and being 500 nm or more away from the interface between the buffer layer and the active layer.

Abstract: An optical measuring device comprises: a lens to form an image with reflected light from a measuring object; an image sensor to receive the reflected light that has passed through the lens and generate an image representing the measuring object; a driver to drive a drive object, the drive object being at least one of the lens and the image sensor; and a controller to control the optical measuring device. The controller acquires, from the image sensor, a plurality of images generated by the image sensor successively imaging the measuring object while the driver is driving the drive object in accordance with a predetermined driving pattern, and outputs the plurality of images.

Abstract: The present invention provides a nitride semiconductor substrate suitable for a high frequency device. The nitride semiconductor substrate has a substrate, a buffer layer made of group 13 nitride semiconductors, and an active layer made of group 13 nitride semiconductors in this order, wherein the substrate is composed of a first substrate made of polycrystalline aluminum nitride, and a second substrate made of Si single crystal having a specific resistance of 100 ?·cm or more, formed on the first substrate, the average particle size of AlN constituting the first substrate is 3 to 9 ?m, and preferably, the second substrate grown by the MCZ method has an oxygen concentration of 1E+18 to 9E+18 atoms/cm3 and a specific resistance of 100 to 1000 ?·cm.

Abstract: The characteristic of Fe-doped HEMTs is improved. The invention provides a nitride semiconductor substrate having a substrate, a buffer layer made of nitride semiconductors on the substrate, and an active layer composed of nitride semiconductor layers on the buffer layer; the buffer layer containing Fe, the Fe having a concentration profile in which the Fe concentration increases monotonically and gradually in the thickness direction of the buffer layer from an interface between the substrate and the buffer layer, has a maximum value within 2×1017 to 1.1×1020 atoms/cm3 inclusive, and decreases monotonically and gradually toward an interface between the buffer layer and the active layer, and the point of the maximum value being within ±50 nm from the midpoint in the thickness direction of the buffer layer, and being 500 nm or more away from the interface between the buffer layer and the active layer.

Abstract: A nitride semiconductor substrate can effectively reduce leakage current in the vertical direction. The nitride semiconductor substrate comprises a buffer layer and an operation layer, both of which are made of nitride semiconductor, deposited on a silicon single crystal substrate, wherein the buffer layer comprises a single-layered first initial layer in contact with the silicon single crystal layer, and a single-layered second initial layer in contact with the first initial layer, the first initial layer is made of AlN, the second initial layer is made of AlzGa1-zN (0.12?z?0.65), and in an X-Y graph where the X-axis denotes z×100 and the Y-axis denotes carbon concentration in the second initial layer, X ranges from 12 to 65 and Y is within a range between Y=1E+17×exp(?0.05×X) and Y=1E+21×exp(?0.05×X).

Abstract: A nitride semiconductor substrate can effectively reduce leakage current in the vertical direction. The nitride semiconductor substrate comprises a buffer layer and an operation layer, both of which are made of nitride semiconductor, deposited on a silicon single crystal substrate, wherein the buffer layer comprises a single-layered first initial layer in contact with the silicon single crystal layer, and a single-layered second initial layer in contact with the first initial layer, the first initial layer is made of AlN, the second initial layer is made of AlzGa1-zN (0.12?z?0.65), and in an X-Y graph where the X-axis denotes z×100 and the Y-axis denotes carbon concentration in the second initial layer, X ranges from 12 to 65 and Y is within a range between Y=1E+17×exp(?0.05×X) and Y=1E+21×exp(?0.05×X).

Abstract: Provided is a nitride semiconductor structure capable of preventing deterioration of transistor characteristics caused by diffusion of a P-type conductive element by using an extremely simple configuration, instead of introducing a diffusion suppression layer. A nitride semiconductor substrate comprises at least a layered structure made of group 13 nitride semiconductors, wherein a first layer, a second layer having a wider band gap than the first layer, and a third layer containing a P-type conductive impurity at a concentration of 5E+18 atoms/cc or more are stacked in this order in the layered structure, and a maximum concentration of P-type conductive impurity in the first layer is 10% or less of the concentration of P-type conductive impurity in the third layer.

Abstract: A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of Ina1Alb1Gac1N (0?a1?1, 0?b1?1, 0?c1?1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of Ina2Alb2Gac2N (0?a2?1, 0?b2?1, 0?c2?1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of AjB1-jN (A is a group 13 element, B is a group 13 element or a group 14 element, A?B, 0<j<1).

Abstract: There is provided a nitride semiconductor epitaxial substrate having a channel layer, a spacer layer, and an electron supply layer that are stacked in this order. The channel layer is GaN. The spacer layer is AlaGa1-aN (0<a<0.5). The electron supply layer is AlxlnyGa1-x-yN (0<x+y?1). The spacer layer has a thickness of two molecular layers or less.

Abstract: Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).

Abstract: An optical measuring device comprises: a lens to form an image with reflected light from a measuring object; an image sensor to receive the reflected light that has passed through the lens and generate an image representing the measuring object; a driver to drive a drive object, the drive object being at least one of the lens and the image sensor; and a controller to control the optical measuring device. The controller acquires, from the image sensor, a plurality of images generated by the image sensor successively imaging the measuring object while the driver is driving the drive object in accordance with a predetermined driving pattern, and outputs the plurality of images.

Abstract: Colorimeter having first and second illumination units disposed symmetrically to a reference line in a prescribed plane, first and second light-receiving parts disposed symmetrically to the reference line in the prescribed plane, a calculation unit for determining color information about a measurement object, and an opposing wall that opposes the measurement object when it is measured. The opposing wall has an abutting part that abuts the measurement object when it is measured. The abutting part has a pair of first abutting parts disposed on two sides of a measurement opening to flank the measurement opening; and a pair of second abutting parts disposed on an orthogonal line orthogonal to a first-abutting-part connection line that connects the pair of first abutting parts to each other, the pair of second abutting parts being disposed on two sides of the first-abutting-part connection line to flank the first-abutting-part connection line.

Abstract: There is provided a nitride semiconductor epitaxial substrate having a spacer structure capable of obtaining characteristics unprecedented in the prior art. In the nitride semiconductor epitaxial substrate of the present invention, a channel layer, a spacer layer, and an electron supply layer are stacked in this order. The channel layer is GaN. The spacer layer is AlaGa1?aN (0<a<0.5). The electron supply layer is AlxInyGa1?x?yN (0<x+y?1). The spacer layer has a thickness of two molecular layers or less. Thus, adverse effects due to the existence of a conventional spacer layer are suitably suppressed.

Abstract: A compound semiconductor substrate according to the present invention includes a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an FWHM of an X-ray diffraction peak of the buffer layer obtained by an X-ray diffraction rocking curve measurement is 800 arcsec or less.

Abstract: A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of Ina1Alb1Gac1N (0?a1?1, 0?b1?1, 0?c1?1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of Ina2Alb2Gac2N (0?a2?1, 0?b2?1, 0?c2?1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of AjB1-jN (A is a group 13 element, B is a group 13 element or a group 14 element, A?B, 0<j<1).

Abstract: Provided is a nitride semiconductor substrate which improves electron mobility and reduce a series resistance component of a transistor. In the nitride semiconductor substrate, an electron transit layer, an intermediate layer, and an electron supply layer are laminated in this order. The electron transit layer includes a nitride semiconductor of a first group 13 element. The intermediate layer and the electron supply layer each include a nitride semiconductor of the first group 13 element and a second group 13 element. The nitride semiconductor substrate has a profile in which an atomic ratio of the second group 13 element to a total of the first group 13 element and the second group 13 element increases in the thickness direction of the intermediate layer from an interface between the electron transit layer and the intermediate layer, and the atomic ratio decreases after a maximum peak value is obtained in the intermediate layer.

Abstract: Since both gloss and a reflection characteristic are measured by one surface characteristic measurement device, a gloss measurement target area and a reflection characteristic measurement target area are appropriately set. A gloss measurement instrument and a color measurement instrument are integrated with a gloss colorimeter. The gloss measurement instrument illuminates an illumination target face by illumination light, receives reflected light generated by a regular reflection of the illumination light on the illumination target face, and outputs a measurement result for the reflected light. A size of the gloss measurement target area can be changed. The color measurement instrument illuminates the illumination target face by annular illumination light, receives reflected light generated by a reflection of the annular illumination light on the illumination target face, and outputs a measurement result for the reflected light. A size of the reflection characteristic measurement target area can be changed.

Abstract: A surface inspection device includes an opening defining an aperture plane, one or more optical transceivers, and a processor. Each optical transceiver includes a light emitter and a light receiver that are arranged in different directions with respect to the aperture plane when viewed from above a virtual normal line of the aperture plane. The processor acquires detection values from the optical transceivers and calculates an evaluation value of a degree of variation in the detection values.