Abstract: The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0<x?1); a second buffer layer which is formed on the first buffer layer and is composed of a plurality of first unit layers each having a thickness of from 250 nm to 350 nm and constituted of an AlyGa1-yN single crystal (0?y<0.1) and a plurality of second unit layers each having a thickness of from 5 nm to 20 nm and constituted of an AlzGa1-zN single crystal (0.9<z?1), said pluralities of first and second unit layers having been alternately superposed; and a semiconductor device formation region which is formed on the second buffer layer and includes at least one nitride-based semiconductor single-crystal layer.

Abstract: Provided is a method for carburizing a tantalum member whereby the tantalum member is less deformed by carburization and can be carburized with good flatness of the planar part thereof and in a uniform manner. The method is a method for subjecting a tantalum member 1 made of tantalum or a tantalum alloy and having a planar part 1a to a carburization process for allowing carbon to penetrate the member 1 from the surface toward the inner portion thereof and includes the steps of: setting the tantalum member 1 in a chamber 3 containing a carbon source by supporting the planar part 1a on a plurality of support rods 6 tapered at distal ends 6a thereof; and subjecting the tantalum member 1 to a carburization process by reducing in pressure and heating the interior of the chamber 3 to allow carbon derived from the carbon source to penetrate the tantalum member 1 from the surface thereof.

Abstract: A method is provided for controlling display of three-dimensional data in a three-dimensional processor that processes three-dimensional data indicating three-dimensional position coordinates of each point on a surface of an object to be measured, the three-dimensional data being obtained by projecting measurement light onto the object and receiving measurement light reflected from the object. The method includes obtaining reliability data that are an index of reliability of three-dimensional data of said each point, enabling a user to adjust a threshold for defining a range of the reliability, and displaying, on a screen of a display, three-dimensional data corresponding to reliability falling within a range defined by the threshold adjusted by the user with the three-dimensional data displayed distinguishably from different three-dimensional data.

Abstract: The problem of the present invention is provision of a tantalum carbide-coated carbon material having superior corrosion resistance to reducing gas and superior resistance to thermal shock at a high temperature and a production method thereof. According to the present invention, a tantalum carbide-coated carbon material having a carbon substrate and a coating film formed directly or via an intermediate layer on the aforementioned carbon substrate can be provided. The coating film consists of a number of microcrystals of tantalum carbide, which are densely gathered and, in an X-ray diffraction pattern of the coating film, the diffraction intensity of the (220) plane of tantalum carbide preferably shows the maximum level, more preferably, the aforementioned diffraction intensity is not less than 4 times the intensity of the second highest diffraction intensity.

Abstract: A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6?X?1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1?y?0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlyGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.

Abstract: A technique is provided which can improve the precision of a matching point search with a plurality of images taking the same object where distant and near views coexist. A plurality of first images obtained by time-sequentially imaging an object from a first viewpoint, and a plurality of second images obtained by time-sequentially imaging the object from a second viewpoint, are obtained. Reference regions including a reference point are set respectively in the first images with the same arrangement, and comparison regions corresponding to the form of the reference regions are set respectively in the second images with the same arrangement. One reference distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of reference regions, and one comparison distribution of pixel values about two-or-more-dimensional space is generated from the distributions of pixel values about the plurality of comparison regions.

Abstract: A three-dimensional shape measuring apparatus includes a measuring section and a data integrating section. The measuring section has three-dimensional measurement dimensions, and measures a three-dimensional shape of a measurement object in a non-contact state. The measuring section measures a three-dimensional shape of a part of the measurement object multiple times by shifting the measurement dimensions to obtain multiple measurement data. The measurement dimensions are shifted in such a manner that at least portions of consecutive measurement dimensions by the shifting are lapped one over the other. The data integrating section integrates the multiple measurement data to obtain the three-dimensional shape of the measurement object. The data integrating section executes the data integration, using reliability information attributed to the respective measurement data.

Abstract: The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0<x?1); a second buffer layer which is formed on the first buffer layer and is composed of a plurality of first unit layers each having a thickness of from 250 nm to 350 nm and constituted of an AlyGa1-yN single crystal (0?y<0.1) and a plurality of second unit layers each having a thickness of from 5 nm to 20 nm and constituted of an AlzGa1-zN single crystal (0.9<z?1), said pluralities of first and second unit layers having been alternately superposed; and a semiconductor device formation region which is formed on the second buffer layer and includes at least one nitride-based semiconductor single-crystal layer.

Abstract: A method and system are provided which can easily determine relative positions and postures of a three-dimensional measurement device and an object when the measurement device is used to measure the object using a manipulator. The method includes fixing one of the measurement device and the object, supporting the other at a support point with the manipulator so that a position and support posture of the other can be changed, conducting first measurement with the support point being set to first position and posture, changing the support point to second position and posture so that the second position is a position where the posture is changed, about a reference position within a measurable area of the measurement device in the first measurement, to an opposite side by a degree equal to a portion corresponding to a change from the first posture to the second posture, and conducting second measurement.

Abstract: A three-dimensional measurement method is provided for measuring an object shape in a non-contact manner by using a non-contact sensor and a sensor moving mechanism that changes a position and a posture of the sensor and can operate by numerical control, moving the non-contact sensor in accordance with measurement path information indicating plural positions and postures of the sensor at the respective positions. The measurement path information is set in advance by teaching.

Abstract: A three-dimensional shape measuring system is provided with a measuring unit having a three-dimensional measurement range and adapted to measure the three-dimensional shape of a measurement object in a noncontact manner, a measurement range shifting unit for shifting the position of the measurement range of the measuring unit, a shape calculating unit for calculating the overall three-dimensional shape of the measurement object from a plurality of measurement data obtained by shifting the measurement range relative to the measurement object, and a judging unit for setting judgment areas in specified peripheral areas within the measurement range and judging the presence or absence of any unmeasured area of the measurement object outside the measurement range based on measurement data corresponding to the judgment areas.

Abstract: In a method for aligning three-dimensional shape data obtained by performing a three-dimensional measurement of an object, photogrammetry of the object with a target mark is performed to obtain a three-dimensional position and a normal vector of the target mark by a calculation, and the three-dimensional measurement of the object is performed to obtain a three-dimensional position and a normal vector of the target mark. Then, determined is a correspondence between the three-dimensional position of the target mark obtained by the photogrammetry and the three-dimensional position of the target mark obtained by the three-dimensional measurement, by using the three-dimensional position and the normal vector of the target mark obtained by the photogrammetry and those of the target mark obtained by the three-dimensional measurement, and three-dimensional shape data obtained by the three-dimensional measurement is aligned based on the correspondence between the three-dimensional-positions of the target marks.

Abstract: A three-dimensional shape measuring system includes: a light projecting/receiving apparatus which causes a light receiver to receive light reflected on a surface of a measurement object onto a light receiving surface thereof at a predetermined cycle multiple times, while changing a projecting direction of the light; and a measuring apparatus for measuring a three-dimensional shape of the measurement object, utilizing light receiving data.

Abstract: This invention provides an oil-based liquid cleansing preparation that does not sag from the hands during use, can easily be applied to a contemplated site, i.e. has excellent usability, exhibits excellent spreadability during cleansing, gives excellent feeling on use which can realize suitable thickness felling, is usable under an environment where the hands and face are in a wetted state, such as a bathroom and a washstand, has a high level of detergency, and is free from residual oil touch after water washing. This composition comprises an ester of a fatty acid with polyglycerin, glycerin esters of a monocarboxylic acid and a dicarboxylic acid, and a monocarboxylic fatty acid ester which is liquid at 25° C. and has a viscosity of 300 to 3000 mPa·s.

Abstract: A method is provided for controlling display of three-dimensional data in a three-dimensional processor that processes three-dimensional data indicating three-dimensional position coordinates of each point on a surface of an object to be measured, the three-dimensional data being obtained by projecting measurement light onto the object and receiving measurement light reflected from the object. The method includes obtaining reliability data that are an index of reliability of three-dimensional data of said each point, enabling a user to adjust a threshold for defining a range of the reliability, and displaying, on a screen of a display, three-dimensional data corresponding to reliability falling within a range defined by the threshold adjusted by the user with the three-dimensional data displayed distinguishably from different three-dimensional data.

Abstract: Provides is a compound semiconductor substrate about which the thickness of its nitride semiconductor single crystal layer can be made large while the generation of cracks, crystal defects or the like is restrained in the nitride semiconductor single crystal layer. The substrate has a first intermediate layer 110 formed on a Si single crystal substrate 100 having a crystal plane orientation of {111}. In the layer 110, a first metal compound layer 110a made of any one of TiC, TiN, VC and VN, and a second metal compound layer 110b made of any one of compounds which are different from the compound of the first metal compound layer out of TiC, TiN, VC and VN are laminated in this order alternately each other over the Si single crystal.

Abstract: A three-dimensional measuring system for measuring a three-dimensional shape of a measurement object in a noncontact manner includes a first obtaining portion for obtaining arrangement information of the measurement object, a second obtaining portion for obtaining design shape information of the measurement object, a fourth obtaining portion for obtaining specifics information about one or more three-dimensional measuring devices, a determining portion for determining a measurable part that can be measured by the three-dimensional measuring device about a surface shape of the measurement object in accordance with the obtained arrangement information, the obtained design shape information and the obtained specifics information, and an output portion for outputting the determined measurable part.

Abstract: An operation of projecting slit light onto an object to be measured and receiving light reflected thereon, and an operation of acquiring a two-dimensional image concerning the object to be measured are repeated a certain number of times by changing a focal length. An imaging contrast is calculated with respect to each of areas on the two-dimensional images acquired at the different focal lengths. A high contrast area where the imaging contrast exceeds a predetermined threshold value is extracted with respect to each of the two-dimensional images acquired at the different focal lengths. Distance information concerning the respective areas is acquired by performing triangulation with respect to each of the high contrast areas. Position adjustment of measurement dimensions is performed in such a manner that the areas are included in the measurement dimensions having the predetermined measurement depth, based on the distance information.

Abstract: To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 ?m or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the <110> direction from the <100> direction, a buffer layer 2a (2b) made of at least one of SiC or BP formed on the Si substrate, a AlN buffer layer formed on the buffer layers, and a nitride semiconductor single crystal film formed on the AlN buffer layer, the nitride semiconductor single crystal film comprising any one of GaN (10-1m), AlN (10-1m), InN (10-1m) or a GaN (10-1m)/and AlN (10-1m) superlattice film.

Abstract: A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 ?m, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0?w<1, 0?x<1, w+x<1) having a thickness of 0.01-0.5 ?m, and an n-type hexagonal InyGazAl1-y-zN single crystal layer 5 (0?y<1, 0<z?1, y+z?1) having a thickness of 0.1-5 ?m and a carrier concentration of 1011-1016/cm3 are stacked in order on an n-type Si single crystal substrate top 2 having a crystal-plane orientation {111}, a carrier concentration of 1016-1021/cm3, and a surface electrode 7 is formed on a surface of a hexagonal InyGazAl1-y-zN single crystal layer 5, so as to provide a compound semiconductor device which causes little energy loss and allows an high efficiency and a high breakdown voltage.