Patents by Inventor Yoshihisa Suzuki

Yoshihisa Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11121248
    Abstract: In an effective region of an active region, a main semiconductor element and a source pad thereof are disposed. A non-operating region of the active region excludes the effective region and is a high-function region in which a gate pad of the main semiconductor element and other electrode pads are disposed. An edge termination region and the electrode pads are separated by an interval equivalent to at least a width of one unit cell of the main semiconductor element. In the high-function region, at a border of the edge termination region, a lead-out electrode is provided on a front surface of a semiconductor substrate. The lead-out electrode has a function of leading out displacement current that flows to the high-function region from the edge termination region when the main semiconductor element is OFF. Thus, destruction at the edge termination region may be suppressed.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: September 14, 2021
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yoshihisa Suzuki, Keishirou Kumada, Yasuyuki Hoshi, Yuichi Hashizume
  • Patent number: 11099783
    Abstract: A memory system includes a non-volatile memory chip that includes a memory cell array, and a memory controller. The memory controller is configured to perform a read operation on the non-volatile memory chip by instructing the non-volatile memory chip to perform a sensing operation to read data stored in the memory cell array, estimating a time when the read data becomes ready to be transferred from the non-volatile memory chip to the memory controller, and instructing the non-volatile memory chip, after the estimated time, to perform a transfer operation to transfer the read data to the memory controller.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: August 24, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Marie Sia, Yoshihisa Kojima, Suguru Nishikawa, Riki Suzuki
  • Publication number: 20210240242
    Abstract: An electronic device that is able to operate by receiving a power supply from a host device through a Universal Serial Bus (USB). The electronic device acts as a first sink device and is connected to a second sink device that is able to operate by receiving a power supply from the host device through the USB and the connection to the first sink device. Each of the first sink device and the second sink device is provided with a CC terminal that obtains power supplying capability information from the host device, a pull-up or pull-down resistor connected to the CC terminal, and a GND terminal that grounds a circuit of the CC terminal and the pull-up or pull-down resistor. The electronic device changes a state of grounding of the pull-up or pull-down resistor to the GND terminal, in one of the first sink device and the second sink device.
    Type: Application
    Filed: January 26, 2021
    Publication date: August 5, 2021
    Inventor: Yoshihisa Suzuki
  • Patent number: 11052174
    Abstract: A non-tubular material for nerve regeneration induction, which can be used for the regeneration of a damaged part in a nerve, and which comprises: (A) a crosslinked form produced by crosslinking a low-endotoxin bioabsorbable polysaccharide having a carboxyl group in the molecule with at least one crosslinkable reagent selected from a compound represented by general formula (I) and a salt thereof via covalent bonds; and (B) a bioabsorbable polymer. R1HN—(CH2)n—NHR2 (I) [wherein R1 and R2 independently represent a hydrogen atom or a group represented by formula: —COCH(NH2)—(CH2)4—NH2, and n represents an integer of 2 to 18]. Thus, a medical material that can induce the regeneration of a damaged part in a nerve is provided.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: July 6, 2021
    Assignees: Mochida Pharmaceutical Co., Ltd.
    Inventors: Yoshihisa Suzuki, Masao Tanihara, Mitsuko Isaji
  • Patent number: 10953351
    Abstract: A continuous bubble removal method includes: preparing a main container, a basic pressurization container that connects to the main container and holds a basic operating liquid, and a basic movable portion that is displaceably attached to the basic pressurization container; flowing target liquid through the main container, the liquid including a bubble; and iteratively decreasing and increasing a volume of the bubble by iteratively pressurizing and depressurizing the target liquid from a region via the basic operating liquid by displacing, in a reciprocating manner, the basic movable portion, the region being surrounded by a basic connecting portion of the basic pressurization container that is closer to the main container than the basic supporting portion, wherein an opening area of the basic supporting portion is larger than an opening area of the basic connecting portion.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: March 23, 2021
    Assignees: NAGOYA INSTITUTE OF TECHNOLOGY, SINTOKOGIO, LTD.
    Inventors: Shuichi Iwata, Katsuaki Odagi, Yoshihisa Suzuki
  • Publication number: 20200385483
    Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.
    Type: Application
    Filed: August 14, 2020
    Publication date: December 10, 2020
    Applicant: Celldex Therapeutics, Inc.
    Inventors: Yaron Hadari, Elizabeth M. Mandel-Bausch, Susanne Radke, Joseph Schlessinger, Yoshihisa Suzuki
  • Patent number: 10818789
    Abstract: In a transistor region of an active region, trench-gate MOS gates for a vertical MOSFET are formed on the front surface side of a semiconductor substrate. In a non-effective/pad region of the active region, a gate pad is formed on the front surface of the semiconductor substrate with an interlayer insulating film interposed therebetween. An n-type region is formed spanning across the entire non-effective region in the surface layer of the front surface of the semiconductor substrate. The portion directly beneath the gate pad is only an n-type region constituted by an n+ starting substrate, an n? drift region, and the n-type region, with the interlayer insulating film sandwiched thereabove. No n+ source region is formed in a p-type base region extension which is the portion of a p-type base region that extends into the non-effective region.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: October 27, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Keishirou Kumada, Yasuyuki Hoshi, Yoshihisa Suzuki, Yuichi Hashizume
  • Patent number: 10793639
    Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: October 6, 2020
    Assignee: Celldex Therapeutics, Inc.
    Inventors: Yaron Hadari, Elizabeth M. Mandel-Bausch, Susanne Radke, Joseph Schlessinger, Yoshihisa Suzuki
  • Publication number: 20200282647
    Abstract: The additive manufacturing system includes a container having an upper part being opened, a base part being vertically movable, and defining a space therein, the space being fillable with sand as a base material of a molded object, an additive manufacturing apparatus forming a green body of the molded object layer by layer in the container while causing the base part to move down, and a microwave oven defining a space therein, the space configured to house the container including the green body, the microwave oven configured to irradiate the container with a microwave to obtain the molded object, wherein a part or a whole of the container is made of a dielectric.
    Type: Application
    Filed: March 4, 2020
    Publication date: September 10, 2020
    Applicant: SINTOKOGIO, LTD.
    Inventors: Hiroyasu MAKINO, Yoshihisa SUZUKI, Hideki MORIMITSU
  • Publication number: 20200268931
    Abstract: Provided is a non-tubular brain damage recovery material which is used to cover and/or fill a damaged part of the brain, the brain damage recovery material including: (A) a cross-linked body with which a bioabsorbable polysaccharide having a carboxyl group in a low endotoxin molecule is covalently bonded and cross-linked with at least one crosslinking reagent selected from among a compound represented by general formula (I) and salts thereof; and (B) a bioabsorbable polymer. R1HN—(CH2)n—NHR2 (I) [in the formula, R1 and R2 each independently represent a hydrogen atom or a group represented by formula of —COCH(NH2)—CH2]4—NH2, and n represents an integer from 2 to 18]. Accordingly, provided is a medical material which can recover a damaged part of the brain.
    Type: Application
    Filed: September 13, 2017
    Publication date: August 27, 2020
    Applicants: Tazuke Kofukai, Mochida Pharmaceutical Co., Ltd.
    Inventors: Yoshihisa Suzuki, Masao TANIHARA, Mitsuko ISAJI
  • Patent number: 10559514
    Abstract: An interlayer insulating film covers a gate electrode and a gate insulating film embedded in a trench. A source electrode includes a first TiN film, a NiSi film, a Ti film, a second TiN film, and an Al alloy film. The first TiN film covers a part of the interlayer insulating film so as to not contact a semiconductor substrate at a bottom of a contact hole. The NiSi film forms an ohmic contact with the semiconductor substrate in the contact hole. The Ti film, the second TiN film, and the Al alloy film are sequentially stacked on surfaces of the first TiN film and the NiSi film, spanning a front surface of the semiconductor substrate, from on the interlayer insulating film. A terminal pin is soldered to the source electrode 16, in an upright position orthogonal to the front surface of the semiconductor substrate.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: February 11, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yuichi Hashizume, Keishirou Kumada, Yoshihisa Suzuki, Yasuyuki Hoshi
  • Publication number: 20200020797
    Abstract: In an effective region of an active region, a main semiconductor element and a source pad thereof are disposed. A non-operating region of the active region excludes the effective region and is a high-function region in which a gate pad of the main semiconductor element and other electrode pads are disposed. An edge termination region and the electrode pads are separated by an interval equivalent to at least a width of one unit cell of the main semiconductor element. In the high-function region, at a border of the edge termination region, a lead-out electrode is provided on a front surface of a semiconductor substrate. The lead-out electrode has a function of leading out displacement current that flows to the high-function region from the edge termination region when the main semiconductor element is OFF. Thus, destruction at the edge termination region may be suppressed.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yoshihisa SUZUKI, Keishirou KUMADA, Yasuyuki HOSHI, Yuichi HASHIZUME
  • Publication number: 20200020800
    Abstract: In a transistor region of an active region, trench-gate MOS gates for a vertical MOSFET are formed on the front surface side of a semiconductor substrate. In a non-effective/pad region of the active region, a gate pad is formed on the front surface of the semiconductor substrate with an interlayer insulating film interposed therebetween. An n-type region is formed spanning across the entire non-effective region in the surface layer of the front surface of the semiconductor substrate. The portion directly beneath the gate pad is only an n-type region constituted by an n+ starting substrate, an n? drift region, and the n-type region, with the interlayer insulating film sandwiched thereabove. No n+ source region is formed in a p-type base region extension which is the portion of a p-type base region that extends into the non-effective region.
    Type: Application
    Filed: July 5, 2019
    Publication date: January 16, 2020
    Applicant: Fuji Electric Co., Ltd.
    Inventors: Keishirou KUMADA, Yasuyuki HOSHI, Yoshihisa SUZUKI, Yuichi HASHIZUME
  • Publication number: 20190386106
    Abstract: A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type on a substrate of the first conductivity type, a second semiconductor layer of a second conductivity type on the first semiconductor layer, and a first semiconductor region of the first conductivity type. The semiconductor device further includes a gate electrode provided in a plurality of trenches via gate insulating films, a protruding portion disposed on the second semiconductor layer at a bridge area between two adjacent ones of the trenches in a direction orthogonal to the trenches, an interlayer insulating film provided on the gate electrode, and having contact holes that form a striped pattern, a first electrode on the interlayer insulating film and in the contact holes, a plating film provided in a plating area, and a solder on the plating film.
    Type: Application
    Filed: August 23, 2019
    Publication date: December 19, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Keishirou KUMADA, Yuichi HASHIZUME, Yasuyuki HOSHI, Yoshihisa SUZUKI
  • Publication number: 20190371932
    Abstract: A source pad of a main semiconductor element is electrically connected to an n+-type source region via a barrier metal. A temperature sensing part is a poly-silicon diode formed by a pn junction between a p-type poly-silicon layer that is a p-type anode region and an n-type poly-silicon layer that is an n-type cathode region. The temperature sensing part is provided, via the field insulating film, on a front surface of a same semiconductor substrate as the main semiconductor element. An anode pad and a cathode pad are in direct contact with the p-type poly-silicon layer and the n-type poly-silicon layer, respectively. The source pad, the anode pad, and the cathode pad are aluminum alloy films.
    Type: Application
    Filed: March 27, 2019
    Publication date: December 5, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yuichi HASHIZUME, Keishirou KUMADA, Yoshihisa SUZUKI, Yasuyuki HOSHI
  • Publication number: 20190224590
    Abstract: A continuous bubble removal method includes: preparing a main container, a basic pressurization container that connects to the main container and holds a basic operating liquid, and a basic movable portion that is displaceably attached to the basic pressurization container; flowing target liquid through the main container, the liquid including a bubble; and iteratively decreasing and increasing a volume of the bubble by iteratively pressurizing and depressurizing the target liquid from a region via the basic operating liquid by displacing, in a reciprocating manner, the basic movable portion the region being surrounded by a basic connecting portion of the basic pressurization container that is closer to the main container than the basic supporting portion, wherein an opening area of the basic supporting portion is larger than an opening area of the basic connecting portion.
    Type: Application
    Filed: April 27, 2017
    Publication date: July 25, 2019
    Applicants: NAGOYA INSTITUTE OF TECHNOLOGY, SINTOKOGIO, LTD.
    Inventors: Shuichi IWATA, Katsuaki ODAGI, Yoshihisa SUZUKI
  • Publication number: 20190109065
    Abstract: An interlayer insulating film covers a gate electrode and a gate insulating film embedded in a trench. A source electrode includes a first TiN film, a NiSi film, a Ti film, a second TiN film, and an Al alloy film. The first TiN film covers a part of the interlayer insulating film so as to not contact a semiconductor substrate at a bottom of a contact hole. The NiSi film forms an ohmic contact with the semiconductor substrate in the contact hole. The Ti film, the second TiN film, and the Al alloy film are sequentially stacked on surfaces of the first TiN film and the NiSi film, spanning a front surface of the semiconductor substrate, from on the interlayer insulating film. A terminal pin is soldered to the source electrode 16, in an upright position orthogonal to the front surface of the semiconductor substrate.
    Type: Application
    Filed: August 27, 2018
    Publication date: April 11, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yuichi HASHIZUME, Keishirou KUMADA, Yoshihisa SUZUKI, Yasuyuki HOSHI
  • Publication number: 20190100598
    Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 4, 2019
    Applicant: Celldex Therapeutics, Inc.
    Inventors: Yaron Hadari, Elizabeth M. Mandel-Bausch, Susanne Radke, Joseph Schlessinger, Yoshihisa Suzuki
  • Publication number: 20190083678
    Abstract: A non-tubular material for nerve regeneration induction, which can be used for the regeneration of a damaged part in a nerve, and which comprises: (A) a crosslinked form produced by crosslinking a low-endotoxin bioabsorbable polysaccharide having a carboxyl group in the molecule with at least one crosslinkable reagent selected from a compound represented by general formula (I) and a salt thereof via covalent bonds; and (B) a bioabsorbable polymer. R1HN—(CH2)n—NHR2 (I) [wherein R1 and R2 independently represent a hydrogen atom or a group represented by formula: —COCH(NH2)—(CH2)4—NH2, and n represents an integer of 2 to 18]. Thus, a medical material that can induce the regeneration of a damaged part in a nerve is provided.
    Type: Application
    Filed: March 14, 2017
    Publication date: March 21, 2019
    Applicants: Tazuke Kofukai, Mochida Pharmaceutical Co., Ltd.
    Inventors: Yoshihisa SUZUKI, Masao TANIHARA, Mitsuko ISAJI
  • Patent number: 10189907
    Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: January 29, 2019
    Assignee: Celldex Therapeutics, Inc.
    Inventors: Yaron Hadari, Susanne Radke, Joseph Schlessinger, Yoshihisa Suzuki