Abstract: A motor includes a shaft, a rotor, a stator including a coil and opposed to the rotor, and a bearing configured to support the shaft. In addition, the motor further includes a first temperature sensor disposed farther toward an outer periphery side than the coil, and a second temperature sensor disposed farther toward an inner periphery side than the coil.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller. The nonvolatile memory includes blocks each including memory cells. The memory controller is configured to control access to the nonvolatile memory. The memory controller is configured to: set a first block, among the plurality of blocks, to be written in a first mode, the first mode being a mode in which data of a first number of bits is written into the memory cell, and set a plurality of second blocks, among the plurality of blocks, to be written in a second mode, the second mode being a mode in which data of a second number of bits is written into the memory cell, the second number being larger than the first number; acquire access information related to the second blocks; and change a writing mode of the first block which has been set in the first mode to the second mode when a first condition of the second blocks based on the access information is satisfied.

Abstract: An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

Abstract: The present disclosure provides in one aspect a construct comprising the R2 region of FGF23. In other embodiments, the construct functions as a FGF23 antagonist by blocking FGF23 binding to ?-Klotho and cell signaling via FGFR activation. In yet other embodiments, the construct prevents FGFR activation. In yet other embodiments, the construct of the present disclosure can be used to treat diseases or disorders related to FGF23 dysregulation and/or overexpression, such as but not limited to phosphate metabolism disorders.

Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.

Abstract: A source pad of a main semiconductor element is electrically connected to an n+-type source region via a barrier metal. A temperature sensing part is a poly-silicon diode formed by a pn junction between a p-type poly-silicon layer that is a p-type anode region and an n-type poly-silicon layer that is an n-type cathode region. The temperature sensing part is provided, via the field insulating film, on a front surface of a same semiconductor substrate as the main semiconductor element. An anode pad and a cathode pad are in direct contact with the p-type poly-silicon layer and the n-type poly-silicon layer, respectively. The source pad, the anode pad, and the cathode pad are aluminum alloy films.

Abstract: A gas flow path includes: a filter configured to selectively transmit a gas; a tubular member which is provided downstream of the filter and in which an opening area at a downstream end is smaller than an opening area at an upstream end; and a negative pressure generating device which is provided in a stage subsequent to the tubular member and which is configured to suck the gas that has passed through the tubular member. This provides a gas flow path and a gas detection system which can concentrate a detection-target gas species in a real-time manner.

Abstract: A gas measuring device includes: a filter to which a power supply that applies a voltage or current is connected, which generates resistance heat, and which combusts a predetermined combustible gas in contact therewith; and a gas sensor configured to detect the combustible gas that has passed through the filter.

Abstract: A gas measuring device includes: a gas rectification unit configured to rectify gas to control traveling directions and traveling speeds of gas molecules based on molecular weights of the gas molecules; and a gas sensor configured to absorb the gas molecules of the gas rectified by the gas rectification unit, and to detect absorption positions and absorption amounts.

Abstract: A gas measuring device includes: a magnetic field generation unit configured to generate a magnetic field; and a gas sensor configured to detect a gas that has passed through the magnetic field generated by the magnetic field generation unit.

Abstract: Provided is a semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a buffer region of the first conductivity type which is provided in a back surface side of the semiconductor substrate relative to the drift region and which includes a first peak of a doping concentration and a second peak of the doping concentration which is provided in a front surface side of the semiconductor substrate relative to the first peak, and a first lifetime control region provided between the first peak and the second peak in a depth direction of the semiconductor substrate. An integrated concentration obtained from an upper end of the drift region to the second peak may be a critical integrated concentration or more in the depth direction of the semiconductor substrate.

Abstract: The gas measurement device includes a plurality of electrodes arranged apart from each other so as to have a gap through which gas can pass, each electrode connected to a power source for applying voltage or current, and a gas sensor configured to detect gas molecules passing between the electrodes.

Abstract: The gas measurement device includes a gas sensor disposed in a gas chamber, a filter configured to control passing gas molecules to the gas chamber, and a driving unit configured to move at least a part of a member defining the gas chamber.

Abstract: The gas measurement device includes a filter having a plurality of openings, each opening being variable in size, an adjustment mechanism configured to vary size of the plurality of openings, a first gas sensor configured to detect gas molecules passing through an opening of the filter and output a first measurement value corresponding to the detected gas molecules, and a second gas sensor configured to detect the gas molecules passing through the opening of the filter, output a second measurement value corresponding to the detected gas molecules, and detect gas molecules of a gas species different from the gas molecules detected by the second gas sensor.

Abstract: The gas measurement device includes a catalyst member connected to a power source applying voltage or current, performing a reaction of a first gas and a second gas contained in a mixed gas contacted with the catalyst member to generate a third gas, and exhibiting a catalytic action in which the reaction changes in response to temperature, and a gas sensor configured to detect gas molecules contacted with the catalyst member.

Abstract: Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having a higher doping concentration than the drift region. The buffer region has two or more helium chemical concentration peaks arranged at different positions in a depth direction of the semiconductor substrate.

Abstract: The additive manufacturing system includes a container having an upper part being opened, a base part being vertically movable, and defining a space therein, the space being fillable with sand as a base material of a molded object, an additive manufacturing apparatus forming a green body of the molded object layer by layer in the container while causing the base part to move down, and a microwave oven defining a space therein, the space configured to house the container including the green body, the microwave oven configured to irradiate the container with a microwave to obtain the molded object, wherein a part or a whole of the container is made of a dielectric.

Abstract: An electronic device that is able to operate by receiving a power supply from a host device through a Universal Serial Bus (USB). The electronic device acts as a first sink device and is connected to a second sink device that is able to operate by receiving a power supply from the host device through the USB and the connection to the first sink device. Each of the first sink device and the second sink device is provided with a CC terminal that obtains power supplying capability information from the host device, a pull-up or pull-down resistor connected to the CC terminal, and a GND terminal that grounds a circuit of the CC terminal and the pull-up or pull-down resistor. The electronic device changes a state of grounding of the pull-up or pull-down resistor to the GND terminal, in one of the first sink device and the second sink device.

Abstract: A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type on a substrate of the first conductivity type, a second semiconductor layer of a second conductivity type on the first semiconductor layer, and a first semiconductor region of the first conductivity type. The semiconductor device further includes a gate electrode provided in a plurality of trenches via gate insulating films, a protruding portion disposed on the second semiconductor layer at a bridge area between two adjacent ones of the trenches in a direction orthogonal to the trenches, an interlayer insulating film provided on the gate electrode, and having contact holes that form a striped pattern, a first electrode on the interlayer insulating film and in the contact holes, a plating film provided in a plating area, and a solder on the plating film.

Abstract: A seat apparatus for a vehicle includes an event detection unit configured to detect an occurrence of an event making a buzzer operate for each of plural seats sharing the buzzer, and a notification control unit configured to operate notification control of the buzzer in accordance with the event. The notification control unit is configured to prioritize and operate one of the plural notification controls which operate duplicately in a case where there are the plural seats in which the event occurs.