Abstract: A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

Abstract: A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate.

Abstract: A semiconductor nonvolatile memory has a base semiconductor region of one conductivity type. A first semiconductor region of the one conductivity type is formed in a surface portion of the base semiconductor region and has an impurity density higher than that of the base semiconductor region. A source region and a drain region of opposite conductivity than the first semiconductor region are formed in a surface portion of the first semiconductor region in spaced relation from each other. A second semiconductor region of the one conductivity type is formed in a surface portion of the first semiconductor region and contains an impurity of the opposite conductivity type. A floating gate electrode is formed over and electrically insulated from the second semiconductor region, and a control gate electrode is formed over and electrically insulated from the floating gate electrode.

Abstract: The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

Abstract: A nonvolatile memory has integrated memory cells each operative to carry out writing and reading of information on a random-access basis and each having an electric charge storage structure effective to memorize the information in a nonvolatile state. The information is temporarily written into each memory cell in a volatile state, and thereafter the temporarily written information is written at once into a respective electric charge storage structure of each memory cell, thereby effecting high speed writing of nonvolatile information into the respective memory cells.

Abstract: An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.

Abstract: The invention is directed to a semiconductor nonvolatile memory of the floating gate type having dual gate structure comprised of a first channel region having a channel resistance controlled by a control gate electrode and a second channel region having a channel resistance controlled by a floating gate electrode. The first channel region is formed on one face section of semiconductor substrate which has a crystal face orientation different from that of another face section on which the second channel region is formed. By such construction, channel length of the first and second channel regions can be shortened to increase memory capacity density and to improve quality.

Abstract: An ashtray which has a main body including a tray for receiving ashes and a housing having an opening facing upwardly for housing the tray therein, a lid member for covering the opening of the housing therewith, a hinge assembly for rotatably connecting the lid member to the main body, an air cleaning means disposed at the lid member for removing impurities from the air, the air cleaning means including a fan for exhausting the air, a drive means for driving the fan and an air cleaner for removing impurities from the air and a light means for lighting the main body and the lid member. The ashtray can be used in a dimly-lit-place as well as in a well-lit place, and is able to clean the air by removing impurities, including smoke emitted from cigarettes or other smoking materials.

Abstract: A warning sound generating device includes a sound source member and an enclosure for protecting the sound source member. A front wall of the enclosure and a sound emitting portion of the sound source member face each other. The front wall of the enclosure has at least one continuous projecting wall extending toward the sound source member. The sound source member has at least one continuous projecting wall extending toward the enclosure and surrounding the sound emitting portion. The enclosure has a plurality of sound exits formed outwardly from the outermost projectng wall of the enclosure. The projecting walls of the sound source member and the enclosure cooperate to define a sound passageway through which a sound generated from the sound emitting portion passes. Each of the projecting walls has a thickness decreasing from the base to the forward rim thereof, so that the passageway has a width between the projecting walls increasing from the sound emitting portion to the sound exits.

Abstract: In a motor driven bell, a pair of cam members are operatively connected to a drive shaft of a motor. One of the cam members acts directly on a leaf spring for moving a hammer attached to the leaf spring generally in parallel relation to the axis of rotation of the cam member to thereby allow the hammer to strike against an associated gong. The other cam member is disposed generally parallel to the cam member so that the leaf spring interposes therebetween. Therefore, the cam members define an amplitude of the leaf spring, whereby the hammer is able to strike against the gong without mis-striking.

Abstract: The present invention provides a read-out circuit for a nonvolatile memory which is capable of extracting a widely-fluctuating output voltage, even when the threshold value of the nonvolatile memory changes only a little.

Abstract: A photoelectric conversion-type rotational position indicator for indicating the rotational position of a rotating body, including a light receiving member having one or more identically shaped light receiving portions made from a photoelectric converting material at predetermined spacings on the light receiving member to generate sinusoidal signals out of phase from each other, and a light shielding member operably connected to the rotating body such that the light shielding member rotates with the rotating body, the light shielding member having windows shaped with an inner curve and an outer curve such that the visible area of each light receiving portion through each of the windows varies in a sinusoidal form of one cycle as the light shielding member rotates, and means for obtaining the phased separated sinusoidal signals by connecting groups of light receiving portions in parallel or series.

Abstract: An anti-theft alarm device for a vehicle, the device having: (a) a detector for detecting an emergency of the vehicle and for emitting a detection signal; (b) a switch for setting and deactivation the alarm device, the switch emitting selectively a setting and a deactivation signal; (c) a control circuit for transmitting selectively an alarm signal in response to the detection signal and confirmation signals in response to setting signal and deactivation signal, the confirmation signals being weaker than a alarm signal; (d) an alarm speaker for selectively generating an alarm sound and a confirmation sound in response to the alarm signal and the confirmation signals respectively, whereby generating an alarm sound according to an emergency of the vehicle and a confirmation sound when the alarm device is set and deactivated.

Abstract: A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called "punch-through" injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.

Abstract: A non-volatile semiconductor memory device has source and drain regions disposed in spaced apart relation adjacent the surface of a semiconductor substrate to define in the substrate a channel region having a first channel region portion in contract with the drain region and a second channel region portion between the first channel region portion and the source region. A floating gate electrode is disposed over the channel region between the source and drain regions, and a gate insulating layer is disposed between the channel region and the floating gate electrode.

Abstract: A thermosensitive semiconductor device has a semiconductor substrate of one conductivity type which is used as the common collector of at least two Darlington-connected transistors. The base of the first stage transistor is connected to the common collector to form a first terminal and the emitter of the final stage transistor forms a second terminal. A constant current source is connected between the first and second terminals. To reduce deviations in the temperature response, a second collector region can be used and which can extend to a depth deeper than the depth of the emitter of the final stage transistor to absorb some of the carriers injected by the emitter.

Abstract: This invention relates to the reduction of programming voltage in a non-volatile memory of the type having a double gate structure composed of a select-gate and a floating-gate. A channel region under the select-gate is highly doped and a channel region under the floating gate is lightly doped or doped to opposite conductivity type. Due to the different doping concentrations between these two channel regions, a large and steep surface potential gap appears at the transition region between the select-gate and the floating-gate in the programming operation thereby reducing the programming voltage.

Abstract: In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also acting as a control gate through a gate oxide film. A part of a channel current is injected into the floating gate at the surface portion under the edge of the floating gate covered by the select gate.