Abstract: There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 &mgr;m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 &mgr;m, and a surfactant having a hydrophilic moiety.

Abstract: A method for manufacturing a semiconductor device, which includes performing a first chemical mechanical polishing of a surface of an object having an uneven surface by making use of a first polishing liquid containing abrasive particles and a surfactant, and performing a second chemical mechanical polishing of the surface of the object that has been polished by the first chemical mechanical polishing by making use of a second polishing liquid containing abrasive particles and having a concentration of a surfactant lower than that of the first polishing liquid, wherein the first chemical mechanical polishing is switched to the second chemical mechanical polishing when the uneven surface of object is flattened.

Abstract: A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.

Abstract: There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.

Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: There is disclosed a polishing method which comprises positioning a treating substrate held by a substrate holder over a turntable so as to enable the treating substrate to press-contact with a polishing region of a polishing surface of the turntable, the polishing surface having the polishing region where the treating substrate moves relative thereto, and a non-polishing region surrounded by the polishing region, introducing a first liquid and a second liquid into a slurry mixing section disposed at the non-polishing region of the polishing surface, at least one of the first and second liquids containing an abrasive component, and applying a mixed slurry comprising the first and second liquids which have been mixed together in advance in the slurry mixing section to the polishing surface while rotating the turntable to enable the treating substrate to move relative to the polishing region, thereby polishing the treating substrate.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: A CMP method for polishing and flattening a film having a rugged surface and formed on a surface of semiconductor substrate by making use of an abrasive cloth while feeding an abrasive agent to the film, wherein the abrasive agent comprises abrasive grains having a surface potential adjusted to negative, and a surfactant formed of a water soluble polymer. Cerium oxide or silicon oxide can be employed as the abrasive grain. As for the surfactant, it is possible to employ ammonium polyacrylate or an organic amine salt.

Abstract: A chemical mechanical polishing method comprises preparing a workpiece to be treated and chemically and mechanically polishing the workpiece to be treated by pressing the workpiece to be treated against a rotating disk carrying a piece of abrasive cloth bonded to the surface thereof at a first position on the disk, while dropping abrasive solution on the abrasive cloth, and, in parallel with the polishing, dressing the abrasive cloth by pressing a dresser carrying diamond grains sticked thereto against the abrasive cloth at a second position on the disk.

Abstract: Provided is a high purity polishing slurry which provides a material to be polished with a high scratch resistance and has a high polishing efficiency and which less contaminates the material to be polished. The polishing slurry comprises water and silica particles dispersed in water, wherein the above silica particles have an average primary particle size of 50 to 300 nm and a refractive index of 1.41 to 1.44 and are synthesized in a liquid phase and produced without passing through a drying step; and the K value is 5×10−6 mol/m2 or more. Further, a polishing process for a semiconductor wafer using the above polishing slurry is provided.

Abstract: A polishing apparatus for polishing a workpiece comprises a polishing table having a polishing surface and a top ring for holding the workpiece and pressing the workpiece against the polishing surface. The polishing table and the top ring are rotated independently of each other. The polishing apparatus further comprises a dresser for dressing the polishing surface with certain timing and a sensor for observing a property of the polishing surface on the polishing table when the polishing surface is being dressed by the dresser.

Abstract: A polishing apparatus for polishing semiconductor wafers has a space divided into a plurality of rooms cleaned to different degrees. A storage unit for storing semiconductor wafers is disposed in one of the rooms. A polishing unit for chemically and mechanically polishing a semiconductor wafer supplied from the storage unit is disposed in another one of the rooms. A delivery gate is disposed between the storage unit and the polishing unit and has a temporary storage chamber defined therein for temporarily storing a semiconductor wafer therein.

Abstract: A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.