Abstract: To improve performance. A negative electrode material is a negative electrode material for a battery, and includes carbon, tungsten trioxide, and silicon particles (33) including silicon, and in the silicon particles (33), a ratio of the amount of Si in Si2p derived from elemental silicon to the amount of Si in Si2p derived from SiO2 in a surface layer is 3 or more, on an atomic concentration basis, as measured by X-ray photoelectron spectroscopy.

Abstract: A negative electrode material is a negative electrode material for a battery, and the material includes carbon, tungsten trioxide formed on the surface of the carbon, and silicon formed on the surface of the carbon.

Abstract: A thermoelectric conversion material formed of a sintered body containing magnesium silicide as a main component contains 0.5 mass % or more and 10 mass % or less of aluminum oxide. The aluminum oxide is distributed at a crystal grain boundary of the magnesium silicide.

Abstract: There is provided a thermoelectric conversion material in which a first layer containing Mg2SixSn1-x (here, 0<x<1) is directly joined to a second layer containing Mg2SiySn1-y (here, 0<y<1), where x/y is set within a range of more than 1.0 and less than 2.0. There is also provided a thermoelectric conversion element including the thermoelectric conversion material and electrodes each joined to one surface and the other surface of the thermoelectric conversion material. There is also provided a thermoelectric conversion module including terminals each joined to the electrodes of the thermoelectric conversion element.

Abstract: A thermoelectric conversion material includes Mg2SixSn1?x (where 0.3?X?1) and a boride containing one or two or more metals selected from titanium, zirconium, and hafnium. Further, it is preferable that the boride is one or two or more selected from TiB2, ZrB2, and HfB2.

Abstract: The present invention provides a fine silicon powder and the like including fine silicon particles having a microscopically measured particle diameter of 1 ?m or more and an average circularity determined in accordance with Formula (1) of 0.93 or more, in which an average particle diameter based on volume, which is measured by a laser diffraction scattering method, is in a range of 0.8 ?m or more and 8.0 ?m or less, an average particle diameter based on number, which is measured by the laser diffraction scattering method, is in a range of 0.100 ?m or more and 0.150 ?m or less, and a specific surface area, which is measured by a BET method, is in a range of 4.0 m2/g or more and 10 m2/g or less. Circularity=(4×?×projected area of particle)1/2/peripheral length of particle (1).

Abstract: A magnesium-based thermoelectric conversion material includes a first layer formed of Mg2Si and a second layer formed of Mg2SixSn1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.

Abstract: A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 ?m2 or more is in a range of 1,800/mm2 or more and 14,000/mm2 or less.

Abstract: A thermoelectric conversion material consists of a non-doped sintered body of a magnesium-based compound, in which an electric resistance value is 1.0×10?4 ?·m or less. The magnesium-based compound is preferably one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

Abstract: A thermoelectric conversion material made of a sintered body containing a magnesium silicide as a major component includes: a magnesium silicide phase; and a magnesium oxide layer formed on a surface layer of the magnesium silicide phase, in which an aluminum concentrated layer having an Al concentration higher than an aluminum concentration in an inside of the magnesium silicide phase is formed between the magnesium oxide layer and the magnesium silicide phase, and the aluminum concentrated layer has a metallic aluminum phase including aluminum or an aluminum alloy.

Abstract: A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

Abstract: Provided is a thermoelectric conversion module, in which n-type thermoelectric conversion elements and p-type thermoelectric conversion elements are formed of materials having different thermal expansion coefficients, one surface sides of the n-type thermoelectric conversion elements and one surface sides of the p-type thermoelectric conversion elements are aligned and joined on one surface side of an insulating substrate, and thermal conductive members are formed on other surface sides of the n-type thermoelectric conversion elements and other surface side of the p-type thermoelectric conversion elements, respectively.

Abstract: A thermoelectric conversion material consists of a non-doped sintered body of a magnesium-based compound, in which an electric resistance value is 1.0×10?4 ?·m or less. The magnesium-based compound is preferably one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

Abstract: A thermoelectric conversion material is provided, consisting of a sintered body of a compound containing a dopant, in which a calculated standard deviation of a dopant concentration, which is obtained by measuring the dopant concentration for each of a plurality of compound particles observed in a section of the sintered body, is 0.15 or less. Here, the compound is preferably one or more selected from a MgSi-based compound, a MnSi-based compound, a SiGe-based compound, a MgSiSn-based compound, and a MgSn-based compound.

Abstract: A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

Abstract: A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

Abstract: A magnesium-based thermoelectric conversion material includes a first layer formed of Mg2Si and a second layer formed of Mg2SixSn1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.

Abstract: A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

Abstract: A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 ?m2 or more is in a range of 1,800/mm2 or more and 14,000 /mm2 or less.

Abstract: A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wi