Abstract: A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wi

Abstract: A thermoelectric conversion material formed of a sintered body containing magnesium silicide as a main component contains 0.5 mass % or more and 10 mass % or less of aluminum oxide. The aluminum oxide is distributed at a crystal grain boundary of the magnesium silicide.

Abstract: A apparatus 70 for measuring ammonia concentration includes an electromotive force acquisition section 75 configured to acquire information about an electromotive force EMF of a mixed potential cell 55 while a detection electrode 51 is exposed to a target gas, an oxygen concentration acquisition section 76 configured to acquire information about oxygen concentration pO2 in the target gas, and a control section 72. The control section 72 derives ammonia concentration pNH3 in the target gas from the acquired information about the electromotive force EMF, the acquired information about the oxygen concentration pO2, and the relationship represented by formula (1): EMF=? loga(pNH3)?? logb(pO2)+B??(1) where ?, ?, and B each represent a constant, and a and b each represent any base (provided that a?1, a>0, b?1, and b>0).

Abstract: A apparatus 70 for measuring combustible-gas concentration includes an electromotive force acquisition section 75 configured to acquire information about an electromotive force of a mixed potential cell 55 while a detection electrode 51 is exposed to a target gas, an oxygen concentration acquisition section 76 configured to acquire information about oxygen concentration pO2 in the target gas, and a control section 72. The control section 72 derives combustible-gas concentration pTHC in the target gas from the acquired information about the electromotive force EMF, the acquired information about the oxygen concentration pO2, and the relationship represented by formula (1): EMF=? loga(pTHC)?? logb(pO2)+B??(1) where ?, ?, and B each represent a constant, and a and b each represent any base (provided that a?1, a>0, b?1, and b>0).

Abstract: A method for manufacturing a magnesium-based thermoelectric conversion material of the present invention includes a raw material-forming step of forming a raw material for sintering by adding silicon oxide in an amount within a range equal to or greater than 0.5 mol % and equal to or smaller than 13.0 mol % to a magnesium-based compound, and a sintering step of heating the raw material for sintering at a temperature within a range equal to or higher than 750° C. and equal to or lower than 950° C. while applying pressure equal to or higher than 10 MPa to the raw material for sintering so as to form a sintered substance.

Abstract: An apparatus for measuring ammonia concentration measures ammonia concentration in a target gas with a sensor element including a mixed potential cell. The apparatus for measuring ammonia concentration includes an electromotive force acquisition section, an oxygen concentration acquisition section, and an ammonia concentration derivation section. The ammonia concentration derivation section derives the ammonia concentration in the target gas from the relationship represented by formula (1): EMF=? loga(pNH3)?? logb(pO2)+? logc(pNH3)×logd(pO2)+B?? (1) (where EMF: an electromotive force of the mixed potential cell, ?, ?, ?, and B: constants (provided that each of ?, ?, and ??0), a, b, c, and d: any base (provided that each of a, b, c, and d?1, and each of a, b, c, and d>0), pNH3: the ammonia concentration in the target gas, and pO2: the oxygen concentration in the target gas).

Abstract: Provided is a thermoelectric conversion module, in which n-type thermoelectric conversion elements and p-type thermoelectric conversion elements are formed of materials having different thermal expansion coefficients, one surface sides of the n-type thermoelectric conversion elements and one surface sides of the p-type thermoelectric conversion elements are aligned and joined on one surface side of an insulating substrate, and thermal conductive members are formed on other surface sides of the n-type thermoelectric conversion elements and other surface side of the p-type thermoelectric conversion elements, respectively.

Abstract: A method for manufacturing a magnesium-based thermoelectric conversion material of the present invention includes a raw material-forming step of forming a raw material for sintering by adding silicon oxide in an amount within a range equal to or greater than 0.5 mol % and equal to or smaller than 13.0 mol % to a magnesium-based compound, and a sintering step of heating the raw material for sintering at a temperature within a range equal to or higher than 750° C. and equal to or lower than 950° C. while applying pressure equal to or higher than 10 MPa to the raw material for sintering so as to form a sintered substance.

Abstract: A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wi

Abstract: An apparatus for measuring ammonia concentration measures ammonia concentration in a target gas with a sensor element including a mixed potential cell. The apparatus for measuring ammonia concentration includes an electromotive force acquisition section, an oxygen concentration acquisition section, and an ammonia concentration derivation section. The ammonia concentration derivation section derives the ammonia concentration in the target gas from the relationship represented by formula (1): EMF=? loga(pNH3)?? logb(pO2)+? logc(pNH3)×logd(pO2)+B??(1) (where EMF: an electromotive force of the mixed potential cell, ?, ?, ?, and B: constants (provided that each of ?, ?, and ??0), a, b, c, and d: any base (provided that each of a, b, c, and d?1, and each of a, b, c, and d>0), pNH3: the ammonia concentration in the target gas, and pO2: the oxygen concentration in the target gas).

Abstract: A apparatus 70 for measuring ammonia concentration includes an electromotive force acquisition section 75 configured to acquire information about an electromotive force EMF of a mixed potential cell 55 while a detection electrode 51 is exposed to a target gas, an oxygen concentration acquisition section 76 configured to acquire information about oxygen concentration pO2 in the target gas, and a control section 72. The control section 72 derives ammonia concentration pNH3 in the target gas from the acquired information about the electromotive force EMF, the acquired information about the oxygen concentration pO2, and the relationship represented by formula (1): EMF=? loga(pNH3)?? logb(pO2)+B??(1) where ?, ?, and B each represent a constant, and a and b each represent any base (provided that a?1, a>0, b?1, and b>0).

Abstract: A apparatus 70 for measuring combustible-gas concentration includes an electromotive force acquisition section 75 configured to acquire information about an electromotive force of a mixed potential cell 55 while a detection electrode 51 is exposed to a target gas, an oxygen concentration acquisition section 76 configured to acquire information about oxygen concentration pO2 in the target gas, and a control section 72. The control section 72 derives combustible-gas concentration pTHC in the target gas from the acquired information about the electromotive force EMF, the acquired information about the oxygen concentration pO2, and the relationship represented by formula (1): EMF=? loga(pTHC)?? logb(pO2)+B??(1) where ?, ?, and B each represent a constant, and a and b each represent any base (provided that a?1, a>0, b?1, and b>0).

Abstract: A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

Abstract: The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower.

Abstract: A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

Abstract: A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

Abstract: The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower.

Abstract: In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

Abstract: A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

Abstract: In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.