Abstract: Provided is a light emitting device having a mechanism capable of efficiently dissipating heat kept in the device to the outside. The light emitting device includes: a first substrate including a heat radiation layer; a second substrate exhibiting light transmittance; and a plurality of organic EL elements provided, between the first substrate and the second substrate to emit light toward the second substrate. The second substrate includes fibrous, thermally conductive wires dispersively arranged therein, and the thermally conductive wires have a diameter of 0.4 ?m or less and have a thermal conductivity higher than the remaining component of the second substrate excluding the thermally conductive wires.

Abstract: An autonomic nerve activity measuring apparatus includes: a pulse wave acquiring unit, configured to acquire at least two pulse wave signals from a living body; an electric stimulation unit, configured to apply electric stimulation to the living body; a comparison unit, configured to compare the pulse wave signals acquired by the pulse wave acquiring unit; and an analysis unit, configured to analyze comparison result provided by the comparison unit.

Abstract: A sympathetic skin response measuring apparatus includes: a stimulation power supplying section configured to supply a power for stimulating only C fibers in a living body, to a stimulation electrode adapted to be applied to the living body; a measuring section configured to measure information of a sympathetic skin response based on a signal obtained from a measurement electrode adapted to be applied to the living body; and an outputting section configured to output the information measured by the measuring section.

Abstract: An object of the present invention is to provide an organic EL element including a plurality of light-emitting layers which each emit light having a different peak wavelength, and having excellent light-emitting performances such as light-emitting intensity with a simple structure.

Abstract: A light-emitting device includes a support substrate, a plurality of organic electroluminescence (EL) elements provided on the support substrate, and a partition wall separating the plurality of organic EL elements from each other. The partition wall has a peripheral portion arranged so as to surround a region in which the plurality of organic EL elements are provided, and a plurality of divider portions arranged in a striped pattern in a region surrounded by the peripheral portion and each having one end and the other end in a longitudinal direction coupled to the peripheral portion. The organic EL elements are arranged between the divider portions adjacent to each other. A depression extending toward the support substrate is provided in the peripheral portion on an extended line in the longitudinal direction of the divider portions.

Abstract: The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm?3 to 5×1020 cm?3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

Abstract: The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (?, ?) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction ? and is substantially represented by I (?, ?)=I (?). I (?, ?) represents a light intensity distribution in a direction (?, ?), ? represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0???90°), ? represents a rotation angle around the normal (0???360°), and I (?) represents a monotone decreasing function with which 0 is approached when ?=90° is satisfied.

Abstract: A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).

Abstract: A pain sensory nerve stimulation apparatus includes: an electrode portion including: a first electrode, a tip end of which is adapted to be inserted into a skin; and at lease one second electrode which is disposed in a circumference of the first electrode without being electrically conductive with the first electrode, and which is adapted to be in contact with a skin; and a stimulation signal supplying unit, supplying a bipolar stimulation signal between the first electrode and the second electrode, the bipolar stimulation signal including a first waveform signal and a second waveform, the first waveform which is convex in a negative direction in the first electrode, the second waveform signal which is convex in a positive direction in the first electrode.

Abstract: A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10?6/° C. or less from GaN.

Abstract: A blood oxygen saturation measuring apparatus includes: a light emitter adapted to emit, to living tissue of a subject, at least two light beams which have different wavelengths from each other; a light receiver adapted to receive the light beams which are transmitted through or reflected from the living tissue, the light receiver which converts the received light beams to electric signals corresponding to receiving intensities of the light beams, respectively; an extractor which extracts frequency components corresponding to changes of the receiving intensities according to a variation of a blood volume of a vein in the living tissue due to respiration of the subject, from the electric signals, respectively; an attenuation ratio calculator which calculates a first attenuation ratio based on amplitudes of the extracted frequency components; and an oxygen saturation calculator which calculates a first blood oxygen saturation in the vein based on the first attenuation ratio.

Abstract: The present invention provides an organic electroluminescence (EL) element that suppresses leakage current flowing between an upper electrode and an under electrode through an organic layer. The organic EL element (51) is provided at a pixel region (R11) surrounded by a bank (3) on the substrate, and comprises: an organic layer (9) including at least one layer of the light-emitting layer (6); an upper electrode (7) and an under electrode (2) which hold the organic layer (9) therebetween; and a leakage current block layer (5) formed between the upper electrode (7) and the under electrode (2) at the boundary region (R12) between the pixel region (R11) and the bank region (R13), and formed between the upper electrode (7) and the under electrode (2) at the boundary region (R12) between the pixel region (R11) and the bank region (R13).

Abstract: The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm?3 to 5×1020 cm?3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.

Abstract: A pain sensory nerve stimulation apparatus includes: an electrode portion including: a first electrode, a tip end of which is adapted to be inserted into a skin; and at lease one second electrode which is disposed in a circumference of the first electrode without being electrically conductive with the first electrode, and which is adapted to be in contact with a skin; and a pulse signal supplier, supplying a pulse signal in which an electrical polarity of the first electrode is set as a anode and an electrical polarity of the second electrode is set as a cathode.

Abstract: The present invention is directed to providing anew illuminating light communication system capable of transmitting large-capacity data at high speed. A transmitting device 1 emits light modulated depending on data to be transmitted from an organic EL light source 4. A receiving device 2 receives the modulated light emitted from the organic EL light source 4 and converts the received modulated light into an electric signal, and demodulates the data from the electric signal obtained by the conversion.

Abstract: The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.

Abstract: An autonomic nerve activity measuring apparatus includes: a pulse wave acquiring unit, configured to acquire at least two pulse wave signals from a living body; an electric stimulation unit, configured to apply electric stimulation to the living body; a comparison unit, configured to compare the pulse wave signals acquired by the pulse wave acquiring unit; and an analysis unit, configured to analyze comparison result provided by the comparison unit.

Abstract: This invention provides an organic electroluminescent element comprising two opposed electrodes connected to an external circuit for applying electrical energy, at least one of the electrodes being transparent or semitransparent, and provided between the electrodes, a plurality of luminescent units, for emitting light through recombination of holes with electrons, each comprising one or more organic layers, one of the organic layers being a luminescent layer, and a charge generation layer held between two of the plurality of luminescent units, characterized in that each two adjacent luminescent units in the plurality of luminescent units are partitioned by the charge generation layer, the charge generation layer comprises at least one metal or its compound (A) having a work function of not more than 3.0 eV and at least one compound (B) having a work function of not less than 4.0 eV, and in at least one of the plurality of luminescent units, the luminescent layer contains a polymeric luminescent material.

Abstract: The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching.

Abstract: A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).