Abstract: A sensor main unit 1 is axially split into three sub-segments. A light-emitting element 2 is attached to one end portion, and a light-receiving element 3 is attached to the other end portion. A respiratory flow path 4 is formed so as to penetrate through the center portion. The sensor main unit 1 is attached to a position on the face below the nostrils, and respiratory gas from the nostrils is guided into the respiratory flow path 4 and is caused to cross over the optical axis connected the light-emitting element 2 and the light-receiving element 3, thereby measuring a carbon dioxide gas in the respiratory gas.

Abstract: A sensor main unit 1 is axially split into three sub-segments. A light-emitting element 2 is attached to one end portion, and a light-receiving element 3 is attached to the other end portion. A respiratory flow path 4 is formed so as to penetrate through the center portion. The sensor main unit 1 is attached to a position on the face below the nostrils, and respiratory gas from the nostrils is guided into the respiratory flow path 4 and is caused to cross over the optical axis connected the light-emitting element 2 and the light-receiving element 3, thereby measuring a carbon dioxide gas in the respiratory gas.

Abstract: In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

Abstract: In a sensor for detecting a carbon dioxide gas in an expiration gas of a living body, an airway case is adapted to be disposed below nostrils of the living body, and formed with an airway passage extending across an optical axis of a light beam emitted from a right emitter of the sensor. A mouth guide is adapted to be disposed in front of a mouth of the living body so as to define a space communicated with the airway passage. The mouth guide is pivotably supported on the airway case. A retainer is adapted to retain an oxygen supply tube on the airway adapter body in such an attitude that an oxygen gas supplied from prongs of the oxygen supply tube is not directly injected into the nostrils.

Abstract: In a sensor for detecting a carbon dioxide gas in an expiration gas of a living body, an airway case is adapted to be disposed below nostrils of the living body, and formed with an airway passage extending across an optical axis of a light beam emitted from a light emitter of the sensor. A mouth guide is adapted to be disposed in front of a mouth of the living body so as to define a space communicated with the airway passage. The mouth guide is pivotably supported on the airway case. A retainer is adapted to retain an oxygen supply tube on the airway adapter body in such an attitude that an oxygen gas supplied from prongs of the oxygen supply tube is not directly injected into the nostrils.

Abstract: The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0?x?1, 0?y?1, 0?z?1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

Abstract: A compound semiconductor luminescent device characterized by comprising: an electroconductive substrate; a compound semiconductor function layer including a GaN layer; an electrode; an adhesiveness-enhancing layer; and a bonding layer, which are stacked in this order, wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10?6/° C. or less from GaN.

Abstract: Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.

Abstract: A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

Abstract: The present invention provides a method for manufacturing a compound semiconductor substrate. The method for manufacturing a compound semiconductor substrate comprises the steps of: (a) epitaxially growing a compound semiconductor functional layer 2 on a substrate 1, (b) bonding a support substrate 3 to the compound semiconductor functional layer 2, (c) polishing the substrate 1 and a part of the compound semiconductor functional layer 2 on the side which is in contact with the substrate 1, to remove them, (d) bonding a thermally conductive substrate 4 having a thermal conductivity higher than that of the substrate 1 to the exposed surface of the compound semiconductor functional layer 2 which is provided in the step (c) to obtain a multilayer substrate and (d) separating the support substrate 3 from the multilayer substrate.

Abstract: In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

Abstract: In a sensor for detecting a carbon dioxide gas in an expiration gas of a living body, an airway case is adapted to be disposed below nostrils of the living body, and formed with an airway passage extending across an optical axis of a light beam emitted from a light emitter of the sensor. A mouth guide is adapted to be disposed in front of a mouth of the living body so as to define a space communicated with the airway passage. The mouth guide is pivotably supported on the airway case. A retainer is adapted to retain an oxygen supply tube on the airway adapter body in such an attitude that an oxygen gas supplied from prongs of the oxygen supply tube is not directly injected into the nostrils.

Abstract: In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

Abstract: The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0?x?1, 0?y?1, 0?z?1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

Abstract: A method for fabricating a III-V Group compound semiconductor comprising a step of epitaxially growing on an AlxGa1-xAs layer of lower Al content an AlxGa1-xAs layer of higher Al content, in which step a growth rate of the AlxGa1-xAs layer of higher Al content is made slower than a growth rate of the AlxGa1-xAs layer of lower Al content, thereby effectively inhibiting the occurrence of starting points of abnormal growth at the interface between the two layers.

Abstract: In a sensor for detecting a carbon dioxide gas in an expiration gas of a living body, an airway case is adapted to be disposed below nostrils of the living body, and formed with an airway passage extending across an optical axis of a light beam emitted from a right emitter of the sensor. A mouth guide is adapted to be disposed in front of a mouth of the living body so as to define a space communicated with the airway passage. The mouth guide is pivotably supported on the airway case. A retainer is adapted to retain an oxygen supply tube on the airway adapter body in such an attitude that an oxygen gas supplied from prongs of the oxygen supply tube is not directly injected into the nostrils.

Abstract: In the method of producing the 3-5 group compound semiconductor carrying out the lateral direction selective growth of the desired GaN type 3-5 group compound-semiconductor layer on this c-plane by the stripe mask formed on the c-plane of the underlying crystal containing a GaN type 3-5 group compound semiconductor, a stripe mask is formed on the underlying crystal such that the direction of the stripe is rotated 0.095° or more and less than 9.6° from <1-100> direction, and with using this stripe mask, the lateral direction selective growth of the GaN type 3-5 group compound-semiconductor layer is carried out, and a high quality 3-5 group compound-semiconductor layer can be formed on the underlying crystal.

Abstract: In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

Abstract: The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume.

Abstract: Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.