Abstract: A 3-5 group compound semiconductor comprising a conductive substrate and a device layer of a 3-5 group compound semiconductor formed by epitaxial growth on said conductive substrate, which comprises between said conductive substrate and said device layer a pn laminate structure layer having at least one pn junction comprising a p-type layer having p-type conductivity and an n-type layer having n-type conductivity.

Abstract: In a fuel pump pressurizing fuel and supplying the fuel to a fuel injection valve of a vehicle engine, a hardened layer of at least one selected from a nitride layer, a carburated and quenched layer and a carbonitrided layer, and a metal compound layer, on a surface of the hardened layer, higher in corrosion resistance than the hardened layer are formed on one of slide surfaces contacting each other and sliding in fuel.

Abstract: A group 3-5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

Abstract: An axial plunger pump which does not need bellows by restricting fuel to a cylinder bore configuring a pump portion and by lubricating the other portion with oil. The high pressure fuel pump includes a plunger reciprocating according to a shaking movement of a swash plate, a cylinder block forming a pump chamber together with the plunger, and a sealing member provided between the plunger and a cylinder bore for sealing oil leaked from the pump chamber to a chamber surrounding the pump chamber, wherein oil in the oil chamber is supplied from the outside of the high pressure fuel pump.

Abstract: The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor.

Abstract: The present invention provides an axial plunger pump which does not need bellows by restricting fuel to a cylinder bore configuring a pump portion and by lubricating the other portion with oil. The high pressure fuel pump comprises a plunger reciprocating according to a shaking movement of a swash plate, a cylinder block forming a pump chamber together with the plunger, and a sealing member provided between the plunger and a cylinder bore for sealing oil leaked from the pump chamber to a chamber surrounding the pump chamber, wherein oil in the oil chamber is supplied from the outside of the high pressure fuel pump.

Abstract: A method for fabricating a III-V Group compound semiconductor comprising a step of epitaxially growing on an AlxGa1−xAs layer of lower Al content an AlxGa1−xAs layer of higher Al content, in which step a growth rate of the AlxGa1−xAs layer of higher Al content is made slower than a growth rate of the AlxGa1−xAs layer of lower Al content, thereby effectively inhibiting the occurrence of starting points of abnormal growth at the interface between the two layers.

Abstract: The present invention provides an axial plunger pump which does not need bellows by restricting fuel to a cylinder bore configuring a pump portion and by lubricating the other portion with oil. The high pressure fuel pump comprises a plunger reciprocating according to a shaking movement of a swash plate, a cylinder block forming a pump chamber together with the plunger, and a sealing member provided between the plunger and a cylinder bore for sealing oil leaked from the pump chamber to a chamber surrounding the pump chamber, wherein oil in the oil chamber is supplied from the outside of the high pressure fuel pump.

Abstract: A sensor main unit 1 is axially split into three sub-segments. A light-emitting element 2 is attached to one end portion, and a light-receiving element 3 is attached to the other end portion. A respiratory flow path 4 is formed so as to penetrate through the center portion. The sensor main unit 1 is attached to a position on the face below the nostrils, and respiratory gas from the nostrils is guided into the respiratory flow path 4 and is caused to cross over the optical axis connected the light-emitting element 2 and the light-receiving element 3, thereby measuring a carbon dioxide gas in the respiratory gas.

Abstract: A rotary head in which the tape running load is decreased by setting the tape path cylindrical surface of an upper drum (12) in a range of winding of a tape (31) at an inner side relative to the tape path cylindrical surface of a lower drum (11). Alternatively, the tape path cylindrical surface of an inner drum (13) in a range of winding of the tape (31) is positioned at an outer side relative to the tape path cylindrical surface of the upper or lower drum.

Abstract: The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of InxGayAlzN, where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.

Abstract: The present invention provides for a Group III-V compound semiconductor which has a high quality and less defects, a method of manufacturing the same, and further a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor.

Abstract: Provided is a 3-5 group compound semiconductor comprising a GaAs substrate, a buffer layer on said GaAs substrate and an epitaxial crystal layer on said buffer layer, and the dislocation density in the epitaxial crystal layer on said buffer layer is 2000/cm2 or less. The properties and reliability of an electronic device or optical device can be remarkably improved.

Abstract: An axial plunger pump according to the present invention is constructed so as to comprise a shaft having a swash plate effecting swing motion and transmitting driving force from the outside, plungers each reciprocating by the swing motion of the swash plate, a cylinder block having cylinders formed so as to open on the side of the swash plate and inserting therein the plungers and having passages for supplying fuel to the cylinders, a body combined with the cylinder block to enclose the swash plate, and sealing members arranged between the plungers and the cylinders on the swash plate side of the passages formed in the cylinder block for sealing gaps between the plungers and the cylinders, respectively.

Abstract: The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. [1] A method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller in capacity.

Abstract: An axial plunger pump includes a shaft having a swash plate effecting swing motion and transmitting driving force from the outside, plungers reciprocate by the swing motion of the swash plate. A cylinder block has cylinders formed so as to open on the side of the swash plate, with the plungers inserted therein. Passages in the block supply refuel to the cylinders. A body combined with the cylinder block encloses the swash plate. Sealing members are arranged between the plungers and the cylinders on the swash plate side of the passages formed in the cylinder block for sealing gaps between the plungers and the cylinders, respectively.

Abstract: A rotary head in which the tape running load is decreased by setting the tape path cylindrical surface of an upper drum (12) in a range of winding of a tape (31) at an inner side relative to the tape path cylindrical surface of a lower drum (11). Alternatively, the tape path cylindrical surface of an inner drum (13) in a range of winding of the tape (31) is positioned at an outer side relative to the tape path cylindrical surface of the upper or lower drum.

Abstract: The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor.

Abstract: A method for manufacturing a group III-V compound semiconductor represented by the general formula InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.

Abstract: Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.