Abstract: A stop unit stops transmitting data to a plurality of nodes for every predetermined period. An acquisition unit acquires versions of routing tables, which are updated in accordance with movement of a query, from the plurality of nodes when the transmission of the data is stopped. A comparison unit compares the versions of the routing tables of the plurality of nodes that are acquired. When there is a node in which the routing table of an old version is stored as a result of the comparison, an update unit updates the routing table of the node.

Abstract: A non-transitory computer-readable recording medium stores therein a program for causing a computer to execute a process. The process includes obtaining, for each predetermined time period, from packets transmitted in a system, a packet set with a combination of a transmission source and a transmission destination different from a predetermined combination of a transmission source and a transmission destination; extracting, for the each predetermined time period, from the packets transmitted in the system, a related packet related to the obtained packet; generating, based on the extracted related packet, information indicating a degree of propagation; and outputting the generated information.

Abstract: A film-forming composition for optical imprint including (A) a photopolymerizable monomer having a hydrophilic group, (B) inorganic nanoparticles, and (C) a photopolymerization initiator, and the composition has an organic solvent content of 20% by mass or less, contains a monomer having a viscosity of 500 cP or less as component (A) at a proportion of 30% by mass or more relative to the total amount of component (A) and component (B), and has a refractive index after curing of 1.56 or higher.

Abstract: A server calculates correlations between complex event processing processes performed by virtual machines (VMs) so as to detect events from streams using condition expressions for identifying the events. The server obtains the load status of each of the VMs. The server then detects a VM having a processing load exceeding a predetermined level based on the load status thus obtained. When a VM having a processing load exceeding a predetermined level is detected, the server distributes the complex event processing processes to the respective VMs based on the calculated correlations between the complex event processing processes.

Abstract: When a detecting complex event condition expression is changed, a rule comparing unit compares the complex event condition expressions before and after the change. The changed portion identifying unit identifies the changed portion based on the comparison result, and the parallel operating unit operates the complex event condition expressions before and after the change in parallel for the detecting complex event condition expression including the identified changed portion. In this manner, the complex event processing apparatus disclosed therein can dynamically change a detecting complex event condition expression used in the complex event processing.

Abstract: A server calculates correlations between complex event processing processes performed by virtual machines (VMs) so as to detect events from streams using condition expressions for identifying the events. The server obtains the load status of each of the VMs. The server then detects a VM having a processing load exceeding a predetermined level based on the load status thus obtained. When a VM having a processing load exceeding a predetermined level is detected, the server distributes the complex event processing processes to the respective VMs based on the calculated correlations between the complex event processing processes.

Abstract: This invention provides a film forming composition for nanoimprinting, which has excellent resistance to etching with oxygen gas, can prevent the separation of a transfer pattern, can eliminate a problem of a holing time on a substrate, and is also excellent in transferability, and photosensitive resist, a nanostructure, a method for pattern formation using the same, and a program for realizing the method for pattern formation. The film forming composition for nanoimprinting comprises a polymeric silicon compound having the function of causing a photocuring reaction. Preferably, the polymeric silicon compound has a functional group cleavable as a result of response to electromagnetic waves and causes a curing reaction upon exposure to electromagnetic waves. More preferred are siloxane polymer compounds, silicon carbide polymer compounds, polysilane polymer compounds, and silazane polymer compounds, or any mixture thereof.

Abstract: Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n??(A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.

Abstract: A simulation device capable of verifying coordinated operation of software and hardware faster and more accurately. The simulation device has a framework including a virtual OS and a virtual CPU to execute software under test. The virtual OS and CPU also serve as a first scheduler that manages an execution schedule for the software under test. The framework includes a communication interface for communication between the software under test and hardware models. A second scheduler manages simulation processes of the framework and the hardware model. The virtual OS and CPU release their execution right to the second scheduler according to the execution schedule of the software under test.

Abstract: A material for forming an antireflective film that enables a large difference in etching rates to be obtained between a resist pattern and an antireflective film. A composition for forming an antireflective film includes a siloxane polymer containing a light-absorbing compound group.

Abstract: A composition for forming an intermediate layer is provided, having improved etching resistance and prevention of reflection of short-wavelength light (ability to absorb short-wavelength light). The composition for forming an intermediate layer (hard mask) is constituted to include at least (A) a silylphenylene-based polymer having a repeating unit represented by the following general formula (1), and (B) a solvent. In the formula, R1 and R2 are each independently hydrogen or an alkyl group having 1 to 20 carbon atoms; and m and n are integers representing the number of repeating units.

Abstract: Compositions for forming silica-based coatings are provided that can form lower refractive-index layers of protective films on lenses of solid image-pickup devices or on optical members such as light guides. The compositions comprise a siloxane polymer and an alkyl quaternary amine. Such siloxane polymers are preferably utilized as hydrolysis products and/or partial condensates of at least one silane compound expressed by the formula (1) below: RnSiX4-n ??(1) in which each R represents independently a hydrogen atom or a monovalent organic group, X represents a hydrolyzable group, n is an integer of 0 to 2, and plural Rs may be identical or different from each other.

Abstract: Compositions for forming colored silica-based coatings are provided that are adapted for forming colored layers in order to conceal pattern shapes made on semiconductor elements. The compositions for forming colored silica-based coatings comprise a siloxane polymer, a colorant and a solvent. The siloxane polymer is preferably a ladder-type siloxane polymer.

Abstract: The present invention provides an improved multi-mold apparatus for manufacturing friction members, with each mold composed of a set comprising a first (top) mold, a second (bottom) mold, and a frame mold. The apparatus is capable of correcting any misalignment in the mountings of the plurality of molds and accurately aligning the molds by movably supporting at least one of the first mold, the second mold and the third mold by first, second and frame bases, respectively, so that the base and molds are movable laterally, in a direction perpendicular to the direction of advance. Projections are formed on one of the first mold and either the frame mold or the back plate and bonding through-holes are formed on the remaining mold or the back plate, so that the projections engage the holes so as to align the first mold and the frame mold accurately.

Abstract: To provide a silica film-forming material having a low dielectric constant and giving a film of less undergoing change in aging, a coating solution for forming a silica film includes a hydrolysis product of a mixture comprising: a tetraalkoxysilane; and at least one of a monoalkyltrialkoxysilane and a dialkyldialkoxysilane, and an ammonium salt represented by formula (I): wherein R1 represents an alkyl group having from 6 to 30 carbon atoms, R2 represents an alkyl group having from 1 to 5 carbon atoms, and X represents CH3COO, SO3H or OH.

Abstract: A composition for forming an intermediate layer is provided, having improved etching resistance, prevention of reflection of short-wavelength light (ability to absorb short-wavelength light), and low-hardening properties. The composition for forming an intermediate layer includes a silylphenylene-based polymer containing an aromatic ring (A), having a repetitive unit represented by the following general formula (1): wherein, at least one of R1 and R2 is a cross-linking group, m and n are each an integer from 0 to 20, and 1 is an integer representing the number of repetitive units; and a solvent (C).

Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

Abstract: The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

Abstract: The present invention provides a composition for forming a coating film comprising a carbosilane based polymer, and a coating film obtained from the composition. The composition for forming a coating film comprises: a carbosilane based polymer (A) having a repeating unit represented by the following general formula (1): wherein R1 and R2 are each independently hydrogen or alkyl groups having 1 to 20 carbon atoms and m is an integer of 0 to 20; and a solvent (B). The coating film according to the present invention is obtained by curing a coating layer formed from the composition for forming a coating film.