Patents by Inventor Yoshinori Yoshida

Yoshinori Yoshida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210115224
    Abstract: A method for producing a fluoropolymer which includes polymerizing a fluoromonomer in an aqueous medium in the presence of a surfactant to provide a fluoropolymer. The surfactant includes at least one selected from the group consisting of a surfactant represented by R1a—CO—R2 a—CO—R3a—OSO3Xa and a surfactant represented by R1b—CO—(CR2b2)n—(OR3b)p—(CR4b2)q-L-OSO3Xb.
    Type: Application
    Filed: March 30, 2018
    Publication date: April 22, 2021
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Taketo KATO, Satoru YONEDA, Manabu FUJISAWA, Kazuya ASANO, Takahiro KITAHARA, Masahiro HIGASHI, Akiyoshi YAMAUCHI, Sumi ISHIHARA, Yosuke KISHIKAWA, Shinnosuke NITTA, Marina NAKANO, Hirotoshi YOSHIDA, Yoshinori NAN BA, Kengo ITO, Chiaki OKUI, Hirokazu AOYAMA, Masamichi SUKEGAWA, Taku YAMANAKA, Hiroyuki SATO, Yuuji TANAKA, Kenji ICHIKAWA, Yohei FUJIMOTO
  • Patent number: 10981953
    Abstract: A method for promoting expression of calreticulin in at least one kind of eukaryotic cell, and a synthetic peptide useful in this method are provided. In the method provided by the present invention, a culture of target cells is prepared, and a calreticulin expression-promoting peptide having calreticulin expression-promoting activity is supplied at least once to that culture.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: April 20, 2021
    Assignees: TOAGOSEI CO, LTD., KYOTO UNIVERSITY
    Inventors: Nahoko Baileykobayashi, Tetsuhiko Yoshida, Yoshinori Yoshida, Kazuhisa Chonabayashi
  • Publication number: 20210054406
    Abstract: A production method comprising the step of forming an aggregate of cells under conditions that permit transfection of the cells with a substance in a non-cell-adhesive container is provided as a technique for producing cells having the desired substance introduced therein on a large scale at a commercial level.
    Type: Application
    Filed: March 28, 2019
    Publication date: February 25, 2021
    Applicants: Kyoto University, Takeda Pharmaceutical Company Limited
    Inventors: Yoshinori YOSHIDA, Kenji MIKI, Yasuharu KAMACHI
  • Publication number: 20210024512
    Abstract: The present invention provides a heterocyclic compound having an activity to promote the maturation of a cardiomyocyte. A compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof has an activity to promote the maturation of a cardiomyocyte, and is useful as a cardiomyocyte maturation promoter.
    Type: Application
    Filed: March 28, 2019
    Publication date: January 28, 2021
    Applicants: Kyoto University, Takeda Pharmaceutical Company Limited
    Inventors: Yoshinori YOSHIDA, Kenji MIKI, Akira KAIEDA, Shigeru KONDO, Hiroshi NARA, Yoshinori IKEURA
  • Publication number: 20210009956
    Abstract: The present invention provides a cardiomyocyte maturation promoter. The present invention provides a cardiomyocyte maturation promoter comprising one or more compounds selected from 2-methoxy-5-((Z)-2-(3,4,5-trimethoxyphenyl)vinyl)phenol, (1-ethyl-1H-benzotriazol-5-yl)methyl (2-(2-methoxy-4-methylphenyl)-4-methyl-1,3-thiazol-5-yl)carbamate, (2?beta)-22-oxovincaleukoblastine, 2-(2-(4-chlorophenyl)ethyl)-6-(2-furyl)-3H-imidazo[4,5-b]pyridine, 4,5-anhydro-1,2-dideoxy-4-methyl-2-((N-(morpholin-4-ylacetyl)-L-alanyl-O-methyl-L-tyrosyl)amino)-1-phenyl-L-threo-pent-3-ulose, 3-(3-methoxyphenyl)-N7,N7-dimethylisoquinoline-1,7-diamine, methyl 4-(2-benzylbenzoyl)-2,5-dimethyl-1H-pyrrole-3-carboxylate, 2?-(4-aminophenyl)-1H,1?H-2,5?-bibenzimidazol-5-amine, and salts thereof.
    Type: Application
    Filed: March 28, 2019
    Publication date: January 14, 2021
    Applicants: Kyoto University, Takeda Pharmaceutical Company Limited
    Inventors: Yoshinori YOSHIDA, Kenji MIKI, Shigeru KONDO
  • Publication number: 20200402972
    Abstract: A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.
    Type: Application
    Filed: April 17, 2020
    Publication date: December 24, 2020
    Inventors: Fujio SHIMIZU, Tsuyoshi KACHI, Yoshinori YOSHIDA
  • Publication number: 20200263816
    Abstract: A pipe joint connecting a first pipe having conductivity and being grounded and a second pipe including a corrugated metallic pipe member and a conductive layer having lower electric resistance than metal forming the pipe member and covering the pipe member, the pipe joint including a connection part that has conductivity and is connected to the first pipe, a housing part that has conductivity, is engaged with the connection part, and houses the second pipe inside the housing part by insertion of the second pipe along an axis direction of the second pipe, and a conductive member that includes a first part in contact at least partially with the housing part and a second part exposed to an outside of the housing part to be in contact with the conductive layer.
    Type: Application
    Filed: September 26, 2018
    Publication date: August 20, 2020
    Inventors: Yoshinori Yoshida, Masahiro Mori
  • Patent number: 10749026
    Abstract: Provided are a semiconductor device including a desired snubber part in accordance with use of the semiconductor device and a method of manufacturing the semiconductor device. A snubber region having a snubber part is defined in a gate pad region defined on a side close to a first main surface of a semiconductor substrate. A p-type diffusion layer and an n-type column layer contacted to each other are formed in the snubber region. The p-type diffusion layer and the n-type column layer are formed as a parasitic capacitance of the snubber part while the n-type column layer is electrically coupled to a drain. The p-type diffusion layer, which extends in a Y-axis direction, is a resistance of the snubber part and electrically coupled to a source.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: August 18, 2020
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yoshinori Yoshida, Tsuyoshi Kachi
  • Publication number: 20200194548
    Abstract: A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure. In order to solve the above problem, in a semiconductor device, an element region and a terminal region are defined on one main surface of the semiconductor substrate. The terminal region is arranged to surround the element region. In the terminal region, a plurality of buried insulators are formed from the main surface of the semiconductor substrate in a way of penetrating an n-type diffusion layer and an n-type column layer and arriving at an n-type epitaxial layer. The buried insulator is formed within a deep trench. The plural buried insulators are arranged in island shapes mutually at a distance from each other.
    Type: Application
    Filed: February 25, 2020
    Publication date: June 18, 2020
    Inventors: Yoshinori YOSHIDA, Tsuyoshi KACHI
  • Publication number: 20200133022
    Abstract: A method for designing an eyeglass lens includes: displaying an image upon a display device while maintaining a positional relationship of a face of a subject and the display device; acquiring information in which visual sensitivity of the subject is evaluated on the basis of an impression received by the subject who has viewed the image; and designing an eyeglass lens on the basis of the information in which the sensitivity is evaluated.
    Type: Application
    Filed: December 26, 2019
    Publication date: April 30, 2020
    Applicant: NIKON-ESSILOR CO., LTD.
    Inventor: Yoshinori YOSHIDA
  • Publication number: 20200109471
    Abstract: A vaporizer includes a tank in which liquid material is heated to generate gas, a cabinet which houses the tank, and a conduit which supplies the gas to the outside of the cabinet. The vaporizer also includes a flow rate measuring means which measures a flow rate of the gas flowing through said conduit, and a heater plate which heats the conduit. The cabinet comprises a detachable panel that is a panel which can be removed. A first support member is fixed directly or indirectly to said cabinet at a position other than said detachable panel, the flow rate measuring means is supported by said first support member, and the heater plate is supported between said flow rate measuring means and said detachable panel by said first support member.
    Type: Application
    Filed: February 20, 2018
    Publication date: April 9, 2020
    Inventors: Akira Sasaki, Yoshinori Yoshida
  • Patent number: 10615251
    Abstract: A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure. In order to solve the above problem, in a semiconductor device, an element region and a terminal region are defined on one main surface of the semiconductor substrate. The terminal region is arranged to surround the element region. In the terminal region, a plurality of buried insulators are formed from the main surface of the semiconductor substrate in a way of penetrating an n-type diffusion layer and an n-type column layer and arriving at an n-type epitaxial layer. The buried insulator is formed within a deep trench. The plural buried insulators are arranged in island shapes mutually at a distance from each other.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: April 7, 2020
    Assignee: Renesas Electronics Corporation
    Inventors: Yoshinori Yoshida, Tsuyoshi Kachi
  • Publication number: 20200056248
    Abstract: An object of the present invention is to provide a method for increasing the purity of a type of tissue cell such as an endothelial cell, a hepatocyte, or an insulin-producing cell. The present invention solves the problem by providing a method comprising a step of introducing, into a cell population, an mRNA comprising a nucleic acid sequence recognized by an miRNA specifically expressed in endothelial cells, hepatocytes, or insulin-producing cells.
    Type: Application
    Filed: October 22, 2019
    Publication date: February 20, 2020
    Inventors: Yoshinori Yoshida, Hirohide Saito, Kenji Miki, Kei Endo, Seiya Takahashi
  • Patent number: 10538740
    Abstract: An object of the present invention is to provide a novel method for sorting cardiomyocytes. Another object of the present invention is to provide a method for producing high-purity cardiomyocytes and a kit used therefor. The present invention provides a method for sorting cardiomyocytes, comprising a step of introducing miRNA-responsive mRNA into a cell group, wherein the miRNA-responsive mRNA consists of a sequence comprising the following (i) and (ii): (i) a nucleic acid specifically recognized by miRNA specifically expressed in cardiomyocytes, and (ii) a nucleic acid corresponding to the coding region of a gene, wherein translation of (ii) the nucleic acid corresponding to the coding region of a gene into protein is regulated by the nucleic acid sequence in (i) above, thereby achieving the aforementioned objects.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: January 21, 2020
    Assignee: Kyoto University
    Inventors: Yoshinori Yoshida, Hirohide Saito, Kenji Miki, Kei Endo, Seiya Takahashi
  • Publication number: 20190390800
    Abstract: A tube includes a corrugated metal tubular member; and a first covering part that covers the outside of the tubular member, and forms a braided structure using a resin string member of which at least a part is covered by a metal having lower electrical resistance than that of a metal forming the tubular member. The tube can also include a third covering part made of an insulating resin arranged between the tubular member and the first covering part, and covers the tubular member, wherein the first covering part covers the third covering part.
    Type: Application
    Filed: February 5, 2018
    Publication date: December 26, 2019
    Inventors: Masahiro Mori, Yoshinori Yoshida
  • Patent number: 10501811
    Abstract: An object of the present invention is to provide a method for increasing the purity of a type of tissue cell such as an endothelial cell, a hepatocyte, or an insulin-producing cell. The present invention solves the problem by providing a method comprising a step of introducing, into a cell population, an mRNA comprising a nucleic acid sequence recognized by an miRNA specifically expressed in endothelial cells, hepatocytes, or insulin-producing cells.
    Type: Grant
    Filed: April 22, 2016
    Date of Patent: December 10, 2019
    Assignee: KYOTO UNIVERSITY
    Inventors: Yoshinori Yoshida, Hirohide Saito, Kenji Miki, Kei Endo, Seiya Takahashi
  • Publication number: 20190131448
    Abstract: Provided are a semiconductor device including a desired snubber part in accordance with use of the semiconductor device and a method of manufacturing the semiconductor device. A snubber region having a snubber part is defined in a gate pad region defined on a side close to a first main surface of a semiconductor substrate. A p-type diffusion layer and an n-type column layer contacted to each other are formed in the snubber region. The p-type diffusion layer and the n-type column layer are formed as a parasitic capacitance of the snubber part while the n-type column layer is electrically coupled to a drain. The p-type diffusion layer, which extends in a Y-axis direction, is a resistance of the snubber part and electrically coupled to a source.
    Type: Application
    Filed: August 29, 2018
    Publication date: May 2, 2019
    Inventors: Yoshinori YOSHIDA, Tsuyoshi KACHI
  • Patent number: 10240126
    Abstract: A method for producing hematopoietic stem cells and/or hematopoietic progenitor cells from pluripotent stem cells is described. The method includes a step of culturing pluripotent stem cells in the presence of IGF2. A method is described for selecting an induced pluripotent stem cell(s) having high capacity to differentiate into hematopoietic stem cells and/or hematopoietic progenitor cells, or into blood cells, based on the expression level(s) of one or more genes such as TRIM58, CTSF, FAM19A5, and TCERG1L genes, or on the DNA methylation state(s) of the TRIM58, CSMD1, and/or FAM19A5 gene(s).
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: March 26, 2019
    Assignee: KYOTO UNIVERSITY
    Inventors: Shinya Yamanaka, Yoshinori Yoshida, Masatoshi Nishizawa
  • Publication number: 20190043943
    Abstract: A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure. In order to solve the above problem, in a semiconductor device, an element region and a terminal region are defined on one main surface of the semiconductor substrate. The terminal region is arranged to surround the element region. In the terminal region, a plurality of buried insulators are formed from the main surface of the semiconductor substrate in a way of penetrating an n-type diffusion layer and an n-type column layer and arriving at an n-type epitaxial layer. The buried insulator is formed within a deep trench. The plural buried insulators are arranged in island shapes mutually at a distance from each other.
    Type: Application
    Filed: June 27, 2018
    Publication date: February 7, 2019
    Inventors: Yoshinori YOSHIDA, Tsuyoshi KACHI
  • Patent number: 10150949
    Abstract: The present invention provides a method for producing or detecting cardiomyocytes by extracting/detecting cardiomyocytes from a cell population which includes cardiomyocytes using, as an index, positivity of NCAM1, SSEA3, SSEA4 and/or CD340.
    Type: Grant
    Filed: June 12, 2017
    Date of Patent: December 11, 2018
    Assignee: Kyoto University
    Inventors: Shinya Yamanaka, Yoshinori Yoshida, Shunsuke Funakoshi