Abstract: By using a drug that activates the cell cycle, including a retinoic acid receptor agonist, a phosphatidylinositol 3-kinase (PI3K) inhibiting agent, or an isocitrate dehydrogenase 1 (IDH1) inhibiting agent, cardiomyocytes can be made to propagate efficiently, and engraftment rate of cardiomyocytes can also be increased at the time of transplantation.

Abstract: A pipe joint includes a hollow joint main body; a nut that is screwed into the joint main body; a seal member that is mounted to inside of the joint main body; and a retainer that is placed between the joint main body and the nut and comprises a pawl portion engaged with a trough of a metal flexible pipe in a coupled state and a retainer locking portion caught and locked inside of the joint main body in the coupled state.

Abstract: A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.

Abstract: Provided are a composition for cell transplant and a method for cell transplant, both of which enable a myocardial tissue to favorably retain cardiac myocytes and/or cardiac progenitors and can improve the persistence and proliferation of transplanted cells. The composition for cell transplant of the present invention is a composition for cell transplant, containing cells and an aqueous solution containing a protein (A), the cells including a cardiac myocyte and/or a cardiac progenitor, the protein (A) having a degree of hydrophobicity of 0.2 to 1.

Abstract: A method for promoting expression of calreticulin in at least one kind of eukaryotic cell, and a synthetic peptide useful in this method are provided. In the method provided by the present invention, a culture of target cells is prepared, and a calreticulin expression-promoting peptide having calreticulin expression-promoting activity is supplied at least once to that culture.

Abstract: A production method comprising the step of forming an aggregate of cells under conditions that permit transfection of the cells with a substance in a non-cell-adhesive container is provided as a technique for producing cells having the desired substance introduced therein on a large scale at a commercial level.

Abstract: The present invention provides a heterocyclic compound having an activity to promote the maturation of a cardiomyocyte. A compound represented by the formula (I): wherein each symbol is as defined in the description, or a salt thereof has an activity to promote the maturation of a cardiomyocyte, and is useful as a cardiomyocyte maturation promoter.

Abstract: The present invention provides a cardiomyocyte maturation promoter. The present invention provides a cardiomyocyte maturation promoter comprising one or more compounds selected from 2-methoxy-5-((Z)-2-(3,4,5-trimethoxyphenyl)vinyl)phenol, (1-ethyl-1H-benzotriazol-5-yl)methyl (2-(2-methoxy-4-methylphenyl)-4-methyl-1,3-thiazol-5-yl)carbamate, (2?beta)-22-oxovincaleukoblastine, 2-(2-(4-chlorophenyl)ethyl)-6-(2-furyl)-3H-imidazo[4,5-b]pyridine, 4,5-anhydro-1,2-dideoxy-4-methyl-2-((N-(morpholin-4-ylacetyl)-L-alanyl-O-methyl-L-tyrosyl)amino)-1-phenyl-L-threo-pent-3-ulose, 3-(3-methoxyphenyl)-N7,N7-dimethylisoquinoline-1,7-diamine, methyl 4-(2-benzylbenzoyl)-2,5-dimethyl-1H-pyrrole-3-carboxylate, 2?-(4-aminophenyl)-1H,1?H-2,5?-bibenzimidazol-5-amine, and salts thereof.

Abstract: A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.

Abstract: A pipe joint connecting a first pipe having conductivity and being grounded and a second pipe including a corrugated metallic pipe member and a conductive layer having lower electric resistance than metal forming the pipe member and covering the pipe member, the pipe joint including a connection part that has conductivity and is connected to the first pipe, a housing part that has conductivity, is engaged with the connection part, and houses the second pipe inside the housing part by insertion of the second pipe along an axis direction of the second pipe, and a conductive member that includes a first part in contact at least partially with the housing part and a second part exposed to an outside of the housing part to be in contact with the conductive layer.

Abstract: Provided are a semiconductor device including a desired snubber part in accordance with use of the semiconductor device and a method of manufacturing the semiconductor device. A snubber region having a snubber part is defined in a gate pad region defined on a side close to a first main surface of a semiconductor substrate. A p-type diffusion layer and an n-type column layer contacted to each other are formed in the snubber region. The p-type diffusion layer and the n-type column layer are formed as a parasitic capacitance of the snubber part while the n-type column layer is electrically coupled to a drain. The p-type diffusion layer, which extends in a Y-axis direction, is a resistance of the snubber part and electrically coupled to a source.

Abstract: A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure. In order to solve the above problem, in a semiconductor device, an element region and a terminal region are defined on one main surface of the semiconductor substrate. The terminal region is arranged to surround the element region. In the terminal region, a plurality of buried insulators are formed from the main surface of the semiconductor substrate in a way of penetrating an n-type diffusion layer and an n-type column layer and arriving at an n-type epitaxial layer. The buried insulator is formed within a deep trench. The plural buried insulators are arranged in island shapes mutually at a distance from each other.

Abstract: A method for designing an eyeglass lens includes: displaying an image upon a display device while maintaining a positional relationship of a face of a subject and the display device; acquiring information in which visual sensitivity of the subject is evaluated on the basis of an impression received by the subject who has viewed the image; and designing an eyeglass lens on the basis of the information in which the sensitivity is evaluated.

Abstract: A vaporizer includes a tank in which liquid material is heated to generate gas, a cabinet which houses the tank, and a conduit which supplies the gas to the outside of the cabinet. The vaporizer also includes a flow rate measuring means which measures a flow rate of the gas flowing through said conduit, and a heater plate which heats the conduit. The cabinet comprises a detachable panel that is a panel which can be removed. A first support member is fixed directly or indirectly to said cabinet at a position other than said detachable panel, the flow rate measuring means is supported by said first support member, and the heater plate is supported between said flow rate measuring means and said detachable panel by said first support member.

Abstract: A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure. In order to solve the above problem, in a semiconductor device, an element region and a terminal region are defined on one main surface of the semiconductor substrate. The terminal region is arranged to surround the element region. In the terminal region, a plurality of buried insulators are formed from the main surface of the semiconductor substrate in a way of penetrating an n-type diffusion layer and an n-type column layer and arriving at an n-type epitaxial layer. The buried insulator is formed within a deep trench. The plural buried insulators are arranged in island shapes mutually at a distance from each other.

Abstract: An object of the present invention is to provide a method for increasing the purity of a type of tissue cell such as an endothelial cell, a hepatocyte, or an insulin-producing cell. The present invention solves the problem by providing a method comprising a step of introducing, into a cell population, an mRNA comprising a nucleic acid sequence recognized by an miRNA specifically expressed in endothelial cells, hepatocytes, or insulin-producing cells.

Abstract: An object of the present invention is to provide a novel method for sorting cardiomyocytes. Another object of the present invention is to provide a method for producing high-purity cardiomyocytes and a kit used therefor. The present invention provides a method for sorting cardiomyocytes, comprising a step of introducing miRNA-responsive mRNA into a cell group, wherein the miRNA-responsive mRNA consists of a sequence comprising the following (i) and (ii): (i) a nucleic acid specifically recognized by miRNA specifically expressed in cardiomyocytes, and (ii) a nucleic acid corresponding to the coding region of a gene, wherein translation of (ii) the nucleic acid corresponding to the coding region of a gene into protein is regulated by the nucleic acid sequence in (i) above, thereby achieving the aforementioned objects.

Abstract: A tube includes a corrugated metal tubular member; and a first covering part that covers the outside of the tubular member, and forms a braided structure using a resin string member of which at least a part is covered by a metal having lower electrical resistance than that of a metal forming the tubular member. The tube can also include a third covering part made of an insulating resin arranged between the tubular member and the first covering part, and covers the tubular member, wherein the first covering part covers the third covering part.

Abstract: An object of the present invention is to provide a method for increasing the purity of a type of tissue cell such as an endothelial cell, a hepatocyte, or an insulin-producing cell. The present invention solves the problem by providing a method comprising a step of introducing, into a cell population, an mRNA comprising a nucleic acid sequence recognized by an miRNA specifically expressed in endothelial cells, hepatocytes, or insulin-producing cells.

Abstract: Provided are a semiconductor device including a desired snubber part in accordance with use of the semiconductor device and a method of manufacturing the semiconductor device. A snubber region having a snubber part is defined in a gate pad region defined on a side close to a first main surface of a semiconductor substrate. A p-type diffusion layer and an n-type column layer contacted to each other are formed in the snubber region. The p-type diffusion layer and the n-type column layer are formed as a parasitic capacitance of the snubber part while the n-type column layer is electrically coupled to a drain. The p-type diffusion layer, which extends in a Y-axis direction, is a resistance of the snubber part and electrically coupled to a source.