Abstract: A method for producing a compound represented by formula (C) wherein R1 represents an amino group protected with a protecting group, the method comprising a step of subjecting a compound represented by formula (B) wherein R1 represents the same meaning as above, to intramolecular cyclization to convert the compound into the compound represented by formula (C).

Abstract: A method for producing a compound represented by formula (C) wherein R1 represents an amino group protected with a protecting group, the method comprising a step of subjecting a compound represented by formula (B) wherein R1 represents the same meaning as above, to intramolecular cyclization to convert the compound into the compound represented by formula (C).

Abstract: A method for producing a compound represented by formula (C) wherein R1 represents an amino group protected with a protecting group, the method comprising a step of subjecting a compound represented by formula (B) wherein R1 represents the same meaning as above, to intramolecular cyclization to convert the compound into the compound represented by formula (C).

Abstract: A method for producing a compound represented by formula (C) wherein R1 represents an amino group protected with a protecting group, the method comprising a step of subjecting a compound represented by formula (B) wherein R1 represents the same meaning as above, to intramolecular cyclization to convert the compound into the compound represented by formula (C).

Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.

Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.

Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.

Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.

Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.

Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.

Abstract: The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.

Abstract: Battery leakage detection system comprising a gas sensor having a gas sensitive nanoparticle structure.

Abstract: Source and/or drain regions of a transistor are first doped with an appropriate dopant and a metal is subsequently deposited. After heating, a silicide will displace the dopant, creating an increased density of dopants at the border of the silicided region. The dopants that are adjacent to or in the gate region of the device will form a thin layer. The silicide or other reactant material is then removed and replaced with a desired source/drain material, while leaving the layer of dopant immediately adjacent to the newly deposited source/drain material.

Abstract: Battery leakage detection system comprising a gas sensor having a gas sensitive nanoparticle structure.

Abstract: Defects in an integrated circuit are electrically passivated. A hydrogen diffusion blocking film is placed on the integrated circuit. Atomic hydrogen is implanted through the hydrogen diffusion blocking film. The integrated circuit is annealed so that the implanted atomic hydrogen diffuses towards locations where the defects are concentrated.

Abstract: An anode material consisting of non-graphitizable carbon material obtained by baking a carbon precursor is disclosed. In this non-graphitizable carbon material, a ratio by weight of carbon Ps in a stacking structure as determined from diffraction peak originating in a (002) crystal lattice plane and X-ray diffraction spectrum components on the lower angle side with respect to the diffraction peak originating in the (002) crystal lattice plane of X-ray diffraction spectrum is smaller than 0.59, or the stacking index SI thereof is smaller than 0.76. Moreover, an average number of carbon layers n.sub.ave in a stacking structure is smaller than 2.46. Alternatively, when the baking temperature is T.degree.C. and the half width at half maximum of the peak appearing in the vicinity of 1340 cm.sup.-1 in the Raman spectrum is HW, the condition expressed below is satisfied.HW>138-0.06.multidot.

Abstract: An anode material consisting of non-graphitizable carbon material obtained by baking carbon precursor is disclosed. In this non-graphitizable carbon material, ratio by weight of carbon Ps in stacking structure determined from diffraction peak originating in (002) crystal lattice plane and X-ray diffraction spectrum components on the lower angle side with respect to the diffraction peak originating in the (002) crystal lattice plane of X-ray diffraction spectrum is smaller than 0.59, or stacking index SI thereof is smaller than 0.76. Moreover, average number of carbon layers n.sub.ave in stacking structure is smaller than 2.46. Alternatively, when baking temperature is T.degree. C. and half width at half maximum of peak appearing in the vicinity of 1340 cm.sup.-1 in Raman spectrum is HW, the condition expressed below is satisfied.HW>138-0.06.multidot.

Abstract: A manual hoist and traction machine wherein an outer diameter of a first lining plate constituting a mechanical brake is made smaller than an inner diameter of a driven disc of a handwheel. The outer diameter of a second lining plate and of a driven disc are made smaller than an inner diameter of a cylindrical portion of a braking ratchet wheel, and the first and second lining plates are formed of a lining raw material having improved performance with a compressive strength of 15 (Kgf/mm.sup.2) or more and a maximum strain of 12 (10.sup.-3 mm/mm) or more.

Abstract: A battery unit of a cartridge type for use as a power supply for electric motorcars, broadcasting apparatus and the like comprises a battery, a monitoring unit for monitoring the condition of the battery and storing information about the battery, a display for displaying data obtained by the monitoring unit, an I/O unit for sending out data representing the condition of the battery monitored by the monitoring unit to an external device, and a battery identification output unit for sending out a battery identification signal representing the type of the battery. The monitoring unit comprises a voltage measuring unit for measuring the supply voltage of the battery, a current measuring unit for measuring the current supplied from the battery, a temperature sensor for sensing the temperature of the battery, and a clock for indicating passage of time. The monitoring unit determines the quantity of residual electrical energy remaining in the battery when replacing the battery with a fully charged battery.

Abstract: A hoist and traction machine having a mechanical brake (13), wherein a not-relative (14)-rotatable operating handle (18) is axially movably an interposed between a stopper (17) provided at an axial end of a driving shaft (5) and a driving member (8) threadedably engaged with the driving shaft (5).