Patents by Inventor Yoshio Nishi

Yoshio Nishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11318212
    Abstract: A method for producing a compound represented by formula (C) wherein R1 represents an amino group protected with a protecting group, the method comprising a step of subjecting a compound represented by formula (B) wherein R1 represents the same meaning as above, to intramolecular cyclization to convert the compound into the compound represented by formula (C).
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: May 3, 2022
    Assignee: DAIICHI SANKYO COMPANY, LIMITED
    Inventors: Yoshio Nishi, Kohei Sakanishi, Shigeru Noguchi, Tadahiro Takeda
  • Publication number: 20200384121
    Abstract: A method for producing a compound represented by formula (C) wherein R1 represents an amino group protected with a protecting group, the method comprising a step of subjecting a compound represented by formula (B) wherein R1 represents the same meaning as above, to intramolecular cyclization to convert the compound into the compound represented by formula (C).
    Type: Application
    Filed: August 30, 2018
    Publication date: December 10, 2020
    Applicant: DAIICHI SANKYO COMPANY, LIMITED
    Inventors: Yoshio NISHI, Kohei SAKANISHI, Shigeru NOGUCHI, Tadahiro TAKEDA
  • Patent number: 10539527
    Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: January 21, 2020
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Kosar Baghbani-Parizi, Yoshio Nishi, Hesaam Esfandyarpour
  • Publication number: 20180335401
    Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
    Type: Application
    Filed: April 10, 2018
    Publication date: November 22, 2018
    Inventors: Kosar Baghbani-Parizi, Yoshio Nishi, Hesaam Esfandyarpour
  • Patent number: 9945807
    Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: April 17, 2018
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Kosar Baghbani-Parizi, Yoshio Nishi, Hesaam Esfandyarpour
  • Publication number: 20160077049
    Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 17, 2016
    Inventors: Kosar Baghbani-Parizi, Yoshio Nishi, Hesaam Esfandyarpour
  • Patent number: 9184099
    Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: November 10, 2015
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Kosar Baghbani-Parizi, Yoshio Nishi, Hesaam Esfandyarpour
  • Publication number: 20120138460
    Abstract: A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
    Type: Application
    Filed: October 4, 2011
    Publication date: June 7, 2012
    Inventors: Kosar Baghbani-Parizi, Yoshio Nishi, Hesaam Esfandyarpour
  • Patent number: 8071458
    Abstract: The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: December 6, 2011
    Assignee: National Chiao Tung University
    Inventors: Po-Tsun Liu, Chen-Shuo Huang, Yi-Ling Huang, Szu-Lin Cheng, Simon M. Sze, Yoshio Nishi
  • Publication number: 20100102975
    Abstract: Battery leakage detection system comprising a gas sensor having a gas sensitive nanoparticle structure.
    Type: Application
    Filed: October 5, 2009
    Publication date: April 29, 2010
    Applicants: Sony Deutschland GmbH, SONY CORPORATION
    Inventors: Tobias Vossmeyer, Yvonne Joseph, Akio Yasuda, Kenji Ogisu, Yoshio Nishi
  • Publication number: 20090101972
    Abstract: Source and/or drain regions of a transistor are first doped with an appropriate dopant and a metal is subsequently deposited. After heating, a silicide will displace the dopant, creating an increased density of dopants at the border of the silicided region. The dopants that are adjacent to or in the gate region of the device will form a thin layer. The silicide or other reactant material is then removed and replaced with a desired source/drain material, while leaving the layer of dopant immediately adjacent to the newly deposited source/drain material.
    Type: Application
    Filed: October 17, 2008
    Publication date: April 23, 2009
    Inventors: R. Stockton Gaines, Yoshio Nishi, Daniel J. Connelly, Paul Clifton
  • Publication number: 20070229294
    Abstract: Battery leakage detection system comprising a gas sensor having a gas sensitive nanoparticle structure.
    Type: Application
    Filed: January 23, 2007
    Publication date: October 4, 2007
    Applicants: Sony Deutschland GmbH, SONY CORPORATION
    Inventors: Tobias Vossmeyer, Yvonne Joseph, Akio Yasuda, Kenji Ogisu, Yoshio Nishi
  • Publication number: 20070072421
    Abstract: Defects in an integrated circuit are electrically passivated. A hydrogen diffusion blocking film is placed on the integrated circuit. Atomic hydrogen is implanted through the hydrogen diffusion blocking film. The integrated circuit is annealed so that the implanted atomic hydrogen diffuses towards locations where the defects are concentrated.
    Type: Application
    Filed: September 26, 2005
    Publication date: March 29, 2007
    Inventors: Chintamani Palsule, Homayoon Haddad, Yoshio Nishi
  • Patent number: 5716732
    Abstract: An anode material consisting of non-graphitizable carbon material obtained by baking a carbon precursor is disclosed. In this non-graphitizable carbon material, a ratio by weight of carbon Ps in a stacking structure as determined from diffraction peak originating in a (002) crystal lattice plane and X-ray diffraction spectrum components on the lower angle side with respect to the diffraction peak originating in the (002) crystal lattice plane of X-ray diffraction spectrum is smaller than 0.59, or the stacking index SI thereof is smaller than 0.76. Moreover, an average number of carbon layers n.sub.ave in a stacking structure is smaller than 2.46. Alternatively, when the baking temperature is T.degree.C. and the half width at half maximum of the peak appearing in the vicinity of 1340 cm.sup.-1 in the Raman spectrum is HW, the condition expressed below is satisfied.HW>138-0.06.multidot.
    Type: Grant
    Filed: March 6, 1997
    Date of Patent: February 10, 1998
    Inventors: Hiroshi Imoto, Atsuo Omaru, Hideto Azuma, Yoshio Nishi, Yoshihisa Gonno, Masayuki Nagamine
  • Patent number: 5643426
    Abstract: An anode material consisting of non-graphitizable carbon material obtained by baking carbon precursor is disclosed. In this non-graphitizable carbon material, ratio by weight of carbon Ps in stacking structure determined from diffraction peak originating in (002) crystal lattice plane and X-ray diffraction spectrum components on the lower angle side with respect to the diffraction peak originating in the (002) crystal lattice plane of X-ray diffraction spectrum is smaller than 0.59, or stacking index SI thereof is smaller than 0.76. Moreover, average number of carbon layers n.sub.ave in stacking structure is smaller than 2.46. Alternatively, when baking temperature is T.degree. C. and half width at half maximum of peak appearing in the vicinity of 1340 cm.sup.-1 in Raman spectrum is HW, the condition expressed below is satisfied.HW>138-0.06.multidot.
    Type: Grant
    Filed: August 23, 1995
    Date of Patent: July 1, 1997
    Assignee: Sony Corporation
    Inventors: Hiroshi Imoto, Atsuo Omaru, Hideto Azuma, Yoshio Nishi, Yoshihisa Gonno, Masayuki Nagamine
  • Patent number: 5556078
    Abstract: A manual hoist and traction machine wherein an outer diameter of a first lining plate constituting a mechanical brake is made smaller than an inner diameter of a driven disc of a handwheel. The outer diameter of a second lining plate and of a driven disc are made smaller than an inner diameter of a cylindrical portion of a braking ratchet wheel, and the first and second lining plates are formed of a lining raw material having improved performance with a compressive strength of 15 (Kgf/mm.sup.2) or more and a maximum strain of 12 (10.sup.-3 mm/mm) or more.
    Type: Grant
    Filed: December 13, 1993
    Date of Patent: September 17, 1996
    Assignee: Elephant Chain Block Company Limited
    Inventors: Haruo Kubota, Yoshio Nishi, Yoshio Ueno, Yasuo Wada, Munenobu Honda
  • Patent number: 5525890
    Abstract: A battery unit of a cartridge type for use as a power supply for electric motorcars, broadcasting apparatus and the like comprises a battery, a monitoring unit for monitoring the condition of the battery and storing information about the battery, a display for displaying data obtained by the monitoring unit, an I/O unit for sending out data representing the condition of the battery monitored by the monitoring unit to an external device, and a battery identification output unit for sending out a battery identification signal representing the type of the battery. The monitoring unit comprises a voltage measuring unit for measuring the supply voltage of the battery, a current measuring unit for measuring the current supplied from the battery, a temperature sensor for sensing the temperature of the battery, and a clock for indicating passage of time. The monitoring unit determines the quantity of residual electrical energy remaining in the battery when replacing the battery with a fully charged battery.
    Type: Grant
    Filed: August 4, 1993
    Date of Patent: June 11, 1996
    Assignee: Sony Corporation
    Inventors: Satoshi Iwatsu, Kazunori Ozawa, Masana Ugaji, Yoshio Nishi, Yasuhito Eguchi
  • Patent number: 5472171
    Abstract: A hoist and traction machine having a mechanical brake (13), wherein a not-relative (14)-rotatable operating handle (18) is axially movably an interposed between a stopper (17) provided at an axial end of a driving shaft (5) and a driving member (8) threadedably engaged with the driving shaft (5).
    Type: Grant
    Filed: August 17, 1993
    Date of Patent: December 5, 1995
    Assignee: Elephant Chain Block Company Limited
    Inventors: Yoshio Nishi, Haruo Kubota, Yasuo Wada, Yoshio Ueno, Munenobu Honda
  • Patent number: 5398912
    Abstract: A hoist and traction machine having a load sheave, a driving shaft and a driving member which is screw-threadedly engageable with the driving shaft. An operating handle 16 has an inner plate 16a and a brake cover 13a to cover a mechanical brake. The inner plate and the brake cover both have apertures of about the same size through which passes a portion of the driving member. A sleeve 102 which is separate from the brake cover and the operating lever is received in the apertures and held in place by a flange and a retaining ring so as to facilitate easy assembly.
    Type: Grant
    Filed: December 11, 1992
    Date of Patent: March 21, 1995
    Assignee: Elephant Chain Block Company Limited
    Inventors: Yoshio Nishi, Yasuo Wada, Haruo Kubota, Munenobu Honda, Yoshio Ueno
  • Patent number: 5351937
    Abstract: A hoist and traction machine having a free rotation control device/apparatus for selectively controlling the mechanical brake to be inoperative and for maintaining the inoperative mode of the mechanical brake, so as to control the free rotation of the load sheave. The free rotation control device is designed such that improved free rotation control operation can be provided, and the range of the pulling force for the chain can be enlarged in the controlled free rotation of the load sheave; thus, allowing the chain to be pulled quicker, while requiring little operating skill. Further, free rotation operation is not provided when the load sheave (and thus the driving shaft) is subjected to a large load acting in the direction of hoisting down the load, thus achieving highly improved safety.
    Type: Grant
    Filed: September 16, 1992
    Date of Patent: October 4, 1994
    Assignee: Elephant Chain Block Company Limited
    Inventors: Yoshio Nishi, Yasuo Wada, Haruo Kubota, Munenobu Honda, Yoshio Ueno