Patents by Inventor Yoshio Nishi
Yoshio Nishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5398912Abstract: A hoist and traction machine having a load sheave, a driving shaft and a driving member which is screw-threadedly engageable with the driving shaft. An operating handle 16 has an inner plate 16a and a brake cover 13a to cover a mechanical brake. The inner plate and the brake cover both have apertures of about the same size through which passes a portion of the driving member. A sleeve 102 which is separate from the brake cover and the operating lever is received in the apertures and held in place by a flange and a retaining ring so as to facilitate easy assembly.Type: GrantFiled: December 11, 1992Date of Patent: March 21, 1995Assignee: Elephant Chain Block Company LimitedInventors: Yoshio Nishi, Yasuo Wada, Haruo Kubota, Munenobu Honda, Yoshio Ueno
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Patent number: 5351937Abstract: A hoist and traction machine having a free rotation control device/apparatus for selectively controlling the mechanical brake to be inoperative and for maintaining the inoperative mode of the mechanical brake, so as to control the free rotation of the load sheave. The free rotation control device is designed such that improved free rotation control operation can be provided, and the range of the pulling force for the chain can be enlarged in the controlled free rotation of the load sheave; thus, allowing the chain to be pulled quicker, while requiring little operating skill. Further, free rotation operation is not provided when the load sheave (and thus the driving shaft) is subjected to a large load acting in the direction of hoisting down the load, thus achieving highly improved safety.Type: GrantFiled: September 16, 1992Date of Patent: October 4, 1994Assignee: Elephant Chain Block Company LimitedInventors: Yoshio Nishi, Yasuo Wada, Haruo Kubota, Munenobu Honda, Yoshio Ueno
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Patent number: 5330036Abstract: A mechanical brake for a hoist and traction machine, which is provided with brake releasing force control layers at braking surfaces of a driving member opposite to lining plates. Each of the brake releasing force control layers comprising a heat-treated plating layer made of nickel phosphate, nickel chromium or chromium, so that the surface condition of each braking surface of the driving member can be controlled and the surface hardness can be controlled, whereby an initial force for the brake releasing during the lowering of a load or the releasing traction of a load is adapted to be lower.Type: GrantFiled: November 18, 1993Date of Patent: July 19, 1994Assignee: Elephant Chain Block Company LimitedInventors: Yoshio Nishi, Haruo Kubota, Yoshio Ueno, Munenobu Honda
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Patent number: 5316267Abstract: A lever type traction machine including a pair of chain holders for holding a chain entering, between side plates, towards the load sheave. Each of the chain holders is provided with a chain-swelling (slacking) restraint portion for preventing the drain from slacking at the rear of the chain holders. The machine is especially advantageous in that the chain will not become entangled or slackened, even if the traction machine is operated up-side down or on its side.Type: GrantFiled: April 9, 1992Date of Patent: May 31, 1994Assignee: Elephant Chain Block Company LimitedInventors: Yoshio Nishi, Haruo Kubota, Yoshio Ueno
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Patent number: 5305989Abstract: A hoist and traction machine having a mechanical brake, in which an operating handle is non-rotatably and axially movably interposed between a stopper provided at an axial end of a driving shaft and a driving member screwable with the driving shaft. Between the operating handle and the stopper is provided a regulation unit for regulating a relative rotation range of the driving member with respect to the driving shaft so as to enable release of the regulation by moving the handle away from the driving member, so that the driving member is moved away from a driven member by of moving the operating handle from the driving member to be normally rotated in a free-rotation operation mode whereby the braking action of the mechanical brake by a braking ratchet wheel and braking plates is released to control the free rotation of the driving shaft and the elastic biasing member biases it to maintain the state of free rotation control.Type: GrantFiled: March 17, 1992Date of Patent: April 26, 1994Assignee: Elephant Chain Block Company LimitedInventors: Yoshio Nishi, Yasuo Wada, Haruo Kubota, Munenobu Honda, Yoshio Ueno
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Patent number: 5294498Abstract: An anode material composed mainly of a difficultly graphatizable carbon or coke (easily graphatizable coke) consisting essentially of carbon, phosphorus and oxygen, and containing phosphorus in an amount of 0.2 to 9.0 wt %, is disclosed. The anode material exhibits a peak in a .sup.31 P solid NMR spectrum in a range of .+-.100 ppm based on orthophosphoric acid, and a peak in a 2p orbital spectrum of a phosphorus atom in XPS of not more than 135 eV. The anode material is prepared by adding phosphoric acid or phosphorus oxides to an organic material or a carbonic material. A non-aqueous liquid electrolyte cell is produced from the above anode material, an Li-containing cathode and a liquid electrolyte.Type: GrantFiled: November 2, 1992Date of Patent: March 15, 1994Assignee: Sony CorporationInventors: Atsuo Omaru, Hideo Azuma, Yoshio Nishi
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Patent number: 5271607Abstract: A hoist/traction apparatus including a gear cover for covering a gear reduction mechanism. The gear cover includes swollen portions protruding outwardly and having blind holding portions open inwardly so as to receive axial ends of intermediate shafts and a driving shaft of the hoist/traction apparatus. In addition, the gear cover is provided with a reinforcing rib to protect the swollen portions.Type: GrantFiled: December 13, 1991Date of Patent: December 21, 1993Inventors: Haruo Kubota, Yoshio Nishi
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Patent number: 5098976Abstract: This invention provides an acoustic material having high elastic modulus and large internal loss by subjecting a high-modulus stretched polyethylene containing paraffin wax to plasma treatment. When the acoustic material of the present invention is used for a diaphragm of a speaker, for example, it is possible to suppress the fluctuation of frequency characteristics resulting from split vibration, decrease harmonic distortion and improve transient characteristics.Type: GrantFiled: April 14, 1989Date of Patent: March 24, 1992Assignees: Sony Corporation, Mutsui Petrochemical IndustriesInventors: Masaru Uryu, Yoshio Nishi, Kazuo Yagi
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Patent number: 5093216Abstract: A carbonaceous material and a non-aqueous electrolyte cell using the carbonaceous material as an anode are disclosed. The carbonaceous material has an interlayer spacing, d.sub.002, of not less than 3.70 angstroms and a true density of less than 1.70 g/cm.sup.3, and contains from 0.2 to 5.0 weight % of phosphorus. The carbonaceous material has a large doping capacity for Li, and the non-aqueous electrolyte cell using the material has a large capacity and improved charge-discharge cycle characteristics.Type: GrantFiled: July 27, 1990Date of Patent: March 3, 1992Assignee: Sony CorporationInventors: Hideto Azuma, Atsuo Omaru, Yoshio Nishi
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Patent number: 5061983Abstract: A method for manufacturing a semiconductor device that includes p- and n-type regions formed on an insulating substrate, and an interconnection layer electrically coupled with these p- and n-type regions. The interconnection layer is an n-type polycrystalline silicon layer which is electrically coupled with the p- and n-type regions through a metal silicide film formed between the interconnection layer and the p- and n-type regions.Type: GrantFiled: February 28, 1989Date of Patent: October 29, 1991Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Hideharu Egawa, Yoshio Nishi, Kenji Maeguchi
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Patent number: 5055968Abstract: A method for producing an information card by printing an electroconductive pattern and a first electrode surface of a battery on a first cover sheet, applying a battery activator onto the first electrode surface, resting an electrolyte-impregnated separator onto the first electrode surface, fixing an IC chip to the electroconductive pattern in a predetermined position, printing a second electrode surface of the battery on a second cover sheet, applying a battery activator onto the second electrode surface, and lapping and sticking the first and second cover sheets together and cutting them into a predetermined size.Type: GrantFiled: July 3, 1989Date of Patent: October 8, 1991Assignee: Sony CorporationInventors: Yoshio Nishi, Akio Yasuda, Tsunehiro Kashima, Takeshi Hori, Shigetaka Higuchi, Hidetoshi Shimizu
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Patent number: 4959281Abstract: An improved non-aqueous electrolyte cell is disclosed in which specific carbonaceous material is used as an anode. The carbonaceous material has interlayer spacing d.sub.002 of not less than 3.70 A, true density not larger than 1.70 g/cm.sup.3 and no exothermic peak not less than 700.degree. C. upon differential thermal analysis under air stream. The combination with cathode active material containing Li in an amount not less than 250 mAH/g in term of charging/discharging capacity, provides superior cyclic life characterisitcs and large capacity.Type: GrantFiled: August 29, 1989Date of Patent: September 25, 1990Assignee: Sony CorporationInventors: Yoshio Nishi, Hideto Azuma, Atsuo Omaru
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Patent number: 4812419Abstract: A via connection and method for making the same for integrated circuits having multiple layers of electrically conductive interconnect lines separated by an insulative layer. The via connection is characterized by a very thin layer of high resistivity material lining the via hole in conductive contact with interconnect lines in two layers. The resistivity of the thin layer material is in a range from about 10 to about 50 times the interconnect line resistivities and generally has a thickness of less than 100 nanometers. The thin layer assures more uniform current flow in the via connection thereby preventing electromigration, with reduced peak local current density by causing current to swing more widely around the corner at the interface between the interconnect lines at the via.Type: GrantFiled: April 30, 1987Date of Patent: March 14, 1989Assignee: Hewlett-Packard CompanyInventors: Keunmyung Lee, Yoshio Nishi
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Patent number: 4742164Abstract: A molding material having high dynamic strength which contains bacterial cellulose having ribbon-shaped microfibrils.Such material is advantageously used as a reinforcing material for composite plastics having high strength, as high quality paper or as acoustic diaphragms for percussion instruments.Type: GrantFiled: April 16, 1986Date of Patent: May 3, 1988Assignees: Agency of Industrial Science and Technology, Sony Corporation, Ajinomoto Co., Inc.Inventors: Masatoshi Iguchi, Shigenobu Mitsuhashi, Kunihiro Ichimura, Yoshio Nishi, Masaru Uryu, Shigeru Yamanaka, Kunihiko Watanabe
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Patent number: 4523213Abstract: An MOS semiconductor device, wherein a buried region of silicon oxide or silicon nitride extends partly over the bottom plane of the channel region of an MOS transistor.Type: GrantFiled: July 9, 1982Date of Patent: June 11, 1985Assignee: VLSI Technology Research AssociationInventors: Masami Konaka, Hiroshi Iwai, Yoshio Nishi
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Patent number: 4491856Abstract: A semiconductor device includes p- and n-type semiconductor layers formed on an insulating substrate and an n-type interconnection layer formed to be electrically coupled with said n-type semiconductor layer. The n-type interconnection layer is formed in contact with the p-type semiconductor layer and is set at such a potential as to apply a reverse voltage across the p-n junction between the n-type interconnection layer and p-type semiconductor layer, so as to electrically isolate the n-type interconnection layer from the p-type semiconductor layer.Type: GrantFiled: February 27, 1984Date of Patent: January 1, 1985Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Hideharu Egawa, Yoshio Nishi, Kenji Maeguchi
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Patent number: 4459606Abstract: The integrated injection logic semiconductor device comprises an N type semiconductor substrate, a P type semiconductor layer laminated on the N type semiconductor substrate, a first N type region extending through the P type semiconductor layer to reach the N type semiconductor substrate, a P type region formed in the first N type region and having a periphery along the outer periphery of the first N type region and a second N type region formed in the P type semiconductor layer. The integrated injection logic semiconductor device is constituted by a PNP lateral transistor utilizing the P type region, the first N type region and the P type semiconductor layer as the emitter, base and collector electrodes respectively, and a NPN vertical transistor utilizing the N type semiconductor substrate, P type semiconductor layer and the second N type region as the emitter, base and collector electrodes, respectively.Type: GrantFiled: December 24, 1975Date of Patent: July 10, 1984Assignee: Tokyo Shibaura Electric Co., Ltd.Inventors: Yukuya Tokumaru, Masanori Nakai, Satoshi Shinozaki, Junichi Nakamura, Shintaro Ito, Yoshio Nishi
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Patent number: 4340953Abstract: An information recording medium comprises a silicon substrate, a silicon dioxide film formed on one principal surface of the semiconductor substrate and a silicon nitride film formed on the silicon dioxide film. A recording electrode stylus is moved relative to and along the surface of the silicon nitride film while applying a recording signal voltage between the stylus and substrate, thus causing charges corresponding to the recording signal voltage to be passed through the silicon dioxide film by the tunnel effect and stored in the silicon nitride film.Type: GrantFiled: May 7, 1980Date of Patent: July 20, 1982Assignees: Nippon Hoso Kyokai, Tokyo Shibaura Denki Kabushiki KaishaInventors: Soichi Iwamura, Yasuaki Nishida, Toshimi Yamato, Norikazu Sawazaki, Yoshio Nishi, Masaharu Watanabe, Norio Endo
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Patent number: 4327476Abstract: A method of manufacturing semiconductor devices is disclosed which comprises the steps of: forming at least one groove at a given location of a semiconductor substrate; laying an insulating film over the entire surface of the semiconductor substrate including the groove; depositing conductive material on the insulating layer to a thickness greater than half the width of an opening of the groove; and forming a MOS capacitor electrode of the conductor layer left in the groove by etching the deposited conductor layer until the insulating film other than its portion within the groove is exposed.Type: GrantFiled: November 28, 1980Date of Patent: May 4, 1982Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Hiroshi Iwai, Yoshio Nishi
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Patent number: D347508Type: GrantFiled: June 10, 1993Date of Patent: May 31, 1994Assignee: Elephant Chain Block Company LimitedInventors: Haruo Kubota, Yoshio Nishi