Abstract: In a power module according to the present invention, a copper layer composed of copper or a copper alloy is provided at a surface of a circuit layer onto which a semiconductor element is bonded, and a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element. An alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu is formed at the interface between the solder layer and the circuit layer, the thickness of the alloy layer is set to be within a range of 2 ?m or more and 20 ?m or less, and a thermal resistance increase rate is less than 10% after loading a power cycles 100,000 times under a condition where an energization time is 5 seconds and a temperature difference is 80° C. in a power cycle test.

Abstract: A power module is provided with a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 ?m from the surface of the circuit layer in the solder layer is 10 ?m or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test.

Abstract: A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.

Abstract: A power module substrate includes a ceramics substrate composed of Si3N4 having a top face. A metal plate composed of aluminum having a purity of 99.99% or more is joined to the top face of the ceramics substrate with a brazing filler metal which includes a melting-point lowering element interposed therebetween. A high concentration section is formed at a joint interface at which the metal plate is joined to the ceramics substrate, has an oxygen concentration greater than an oxygen concentration in the metal plate and in the ceramics substrate, and has a thickness of less than or equal to 4 nm.

Abstract: A power module substrate includes a ceramics substrate composed of Al2O3 having a top face. A metal plate composed of aluminum having a purity of 99.99% or more is joined to the top face of the ceramics substrate with a brazing filler metal which includes silicon interposed therebetween. A high concentration section is formed at a joint interface at which the metal plate is joined to the ceramics substrate, and has a silicon concentration that is more than five times the silicon concentration in the metal plate.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: A method for producing a substrate for a power module with a heat sink includes a heat sink bonding step for bonding a heat sink to the surface of a second metal plate. The heat sink bonding step includes: a Cu layer forming step for forming a Cu layer on at least one of the surface of the second metal plate and a bonding surface of the heat sink; a heat sink laminating step for laminating the second metal plate and the heat sink via the Cu layer; a heat sink heating step for pressing in the lamination direction and heating the second metal plate and the heat sink, to diffuse Cu in the Cu layer into the second metal plate and the heat sink; and a molten metal solidifying step for solidifying the molten metal formed with Cu diffusion, to bond the second metal plate and the heat sink.

Abstract: A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Abstract: A power module substrate with a heatsink includes: a power module substrate provided with a ceramic substrate, a circuit layer and a metal layer; and a heatsink bonded to the metal layer via a solder layer and composed of copper or a copper alloy. The metal layer is formed by bonding an aluminum plate in which the content of Al is 99.0 to 99.85% by mass to the ceramic substrate, and the solder layer is formed of a solid-solubilized-hardening type solder material including Sn as a major component and a solid-solubilized element being solid-solubilized into a matrix of Sn.

Abstract: This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 ?m to 80 ?m.

Abstract: A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

Abstract: A power module substrate including an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on the other surface of the insulating substrate, wherein the circuit layer is composed of copper or a copper alloy, one surface of this circuit layer functions as an installation surface on which an electronic component is installed, the metal layer is formed by bonding an aluminum sheet composed of aluminum or an aluminum alloy, a thickness t1 of the circuit layer is within a range of 0.1 mm?t1?0.6 mm, a thickness t2 of the metal layer is within a range of 0.5 mm?t2?6 mm, and the relationship between the thickness t1 of the circuit layer and the thickness t2 of the metal layer satisfies t1<t2.

Abstract: A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.

Abstract: A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.

Abstract: A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Abstract: A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.

Abstract: A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.

Abstract: A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55?B/A?20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.

Abstract: A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.