Abstract: Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

Abstract: A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.

Abstract: A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: A method for producing a substrate for a power module with a heat sink includes a heat sink bonding step for bonding a heat sink to the surface of a second metal plate. The heat sink bonding step includes: a Cu layer forming step for forming a Cu layer on at least one of the surface of the second metal plate and a bonding surface of the heat sink; a heat sink laminating step for laminating the second metal plate and the heat sink via the Cu layer; a heat sink heating step for pressing in the lamination direction and heating the second metal plate and the heat sink, to diffuse Cu in the Cu layer into the second metal plate and the heat sink; and a molten metal solidifying step for solidifying the molten metal formed with Cu diffusion, to bond the second metal plate and the heat sink.

Abstract: A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.

Abstract: A method for manufacturing a power module substrate, includes: preparing a ceramics substrate and a metal plate made of pure aluminum; a fusion step in which the ceramics substrate and the metal plate are stacked in layers with a brazing filler metal interposed therebetween, and a fused aluminum layer is formed at an interface between the ceramics substrate and the metal plate by fusing the brazing filler metal which is caused by heating; and a solidifying step in which the fused aluminum layer is solidified by cooling, and a crystal is grown so as to be arranged in a crystal orientation of the metal plate when the fused aluminum layer is solidified.

Abstract: Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.

Abstract: A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.

Abstract: A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.

Abstract: A method for manufacturing a power module substrate, includes: preparing a ceramics substrate and a metal plate made of pure aluminum; a fusion step in which the ceramics substrate and the metal plate are stacked in layers with a brazing filler metal interposed therebetween, and a fused aluminum layer is formed at an interface between the ceramics substrate and the metal plate by fusing the brazing filler metal which is caused by heating; and a solidifying step in which the fused aluminum layer is solidified by cooling, and a crystal is grown so as to be arranged in a crystal orientation of the metal plate when the fused aluminum layer is solidified.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.

Abstract: An insulating circuit board includes an insulating plate, a circuit board joined to a first surface of the insulating plate, and a metal plate joined to a second surface of the insulating plate. The circuit board is formed from an Al alloy having a purity of 99.98% or more or pure Al, and the metal plate is formed from an Al alloy having a purity of 98.00% or more and 99.90% or less. The thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, the thickness (b) of the metal plate is 0.6 mm or more and 1.5 mm or less, and the thicknesses satisfy the expression of a/b?1. An insulating circuit board having a cooling sink includes cooling sink joined via a second solder layer. The second solder layer contains Sn as its main component, and has a Young's modulus, 35 GPa or more, a 0.2% proof stress of, 30 MPa or more, and a tensile strength of, 40 MPa or more. The cooling sink is formed from, pure Al or an Al alloy.

Abstract: A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.

Abstract: Polycrystals with a MgO purity of at least 99.0%, a relative density of at least 90.0%, a sulfur S content of 0.01 to 50 ppm, a chlorine Cl content of 0.01 to 50 ppm, a nitrogen N content of 0.01 to 200 ppm, and a phosphorus P content of 0.01 to 30 ppm. Even when vapor deposition is conducted using electron beam deposition, almost no splash occurs, and the film characteristics of the product MgO film can also be improved.

Abstract: It is an object of the present invention to provide a polycrystalline MgO deposition material which is capable of obtaining a good discharge response characteristic over a wide temperature range. Additionally, it is another object of the present invention to provide a plasma display panel with an improved luminance and a material for the plasma display panel which can remarkably reduce the number of address ICs without lowering the panel luminance. In order to achieve the objects, there is provided an improvement of a polycrystalline MgO deposition material for a passivation layer of the plasma display panel. A characteristic structure is that the polycrystalline MgO deposition material is formed of a sintered pellet of polycrystalline MgO, of which MgO purity is more than 99.9% and relative density is more than 90%. Further, a Si concentration in the polycrystalline MgO is more than 30 ppm and less than 500 ppm.

Abstract: A vapor deposited material for FPD protective film comprises a polycrystalline body, sintered body, or single crystal having a surface covered with a fluoride layer. A manufacturing device for FPD protective film comprises: a film formation section for forming a film body on one side of a substrate, and a layer formation section for forming a fluoride layer on a surface of said film body; wherein said layer formation section comprises: a layer formation chamber for housing a substrate on which said film body is formed, a gas supply mechanism for forming a fluoride layer on the surface of said film body by supplying a fluoridation agent towards said substrate in said layer formation chamber, and a substrate heating section provided in said layer formation chamber for heating said substrate.

Abstract: One object of the present invention is to provide a blade for forming ribs that is able to improve wear resistance; in order to achieve the object, the present invention provide a blade for forming ribs that forms ribs either on the surface of a substrate or via an undercoating layer on the surface of a substrate by moving a blade body in a fixed direction relative to a paste film in the state in which comb teeth formed on at least a portion of the periphery of said blade body are penetrated into said paste film formed on the surface of said substrate to plasticly deform said paste film; wherein, the surface of said comb teeth formed on said blade body that makes contact with said paste film is coated with a compound layer in which hard particles are dispersed in a metal.

Abstract: Polycrystals with a MgO purity of at least 99.0%, a relative density of at least 90.0%, a sulfur S content of 0.01 to 50 ppm, a chlorine Cl content of 0.01 to 50 ppm, a nitrogen N content of 0.01 to 200 ppm, and a phosphorus P content of 0.01 to 30 ppm. Even when vapor deposition is conducted using electron beam deposition, almost no splash occurs, and the film characteristics of the product MgO film can also be improved.