Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.

Abstract: A metasurface includes a substrate including a light input surface into which input light is input and a light output surface facing the light input surface, and a plurality of V-shaped antenna elements disposed on the light output surface of the substrate and including a first arm and a second arm continuing on one end of the first arm. The each of the V-shaped antenna elements has a thickness in a range of 100 nm to 400 nm.

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Abstract: A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract: A semiconductor laser element is realized with high beam quality (index M2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.

Abstract: A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.

Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Abstract: A semiconductor laser element is realized with high beam quality (index M2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.

Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).