Patents by Inventor Yoshitaka Nakamura

Yoshitaka Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for Producing Thiazolidinedione Compound and Production Intermediate Thereof
    Publication number: 20080103185
    Abstract: There are provided crystals of a thiazolidinedione derivative having excellent prophylactic and therapeutic effects on a disease caused by insulin resistance and a process for producing the thiazolidinedione derivative with a high purity.
    Type: Application
    Filed: January 24, 2006
    Publication date: May 1, 2008
    Applicant: DAIICHI SANKYO COMPANY, LIMITED
    Inventors: Yoshitaka Nakamura, Chiharu Satoh, Hiroshi Miyamoto, Hisaki Kajino
  • Noncontact sensor
    Patent number: 7330033
    Abstract: A noncontact voltage sensor is housed in a container comprising a container body having an opening on one side and an insulation cover body for sealing the opening. A plate type electrode insulated from a ground is housed in the container. The cover body side is opposed to a charging part of such as cables of an aerial line. A voltage is induced in the plate type electrode due to aerial electric charges between the charging part and the plate type electrode in the container, allowing detection of the voltage in the charging part. The cover body of the noncontact sensor is made of a fluorine containing resin such as an ethylene tetrafluoride resin to prevent a water film from forming on the outside surface of the insulation cover body and causing deterioration of the detection.
    Type: Grant
    Filed: March 30, 2004
    Date of Patent: February 12, 2008
    Assignee: Nippon Kouatsu Electric Co., Ltd.
    Inventor: Yoshitaka Nakamura
  • SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20080029801
    Abstract: A semiconductor device includes a first insulating layer, a capacitor, an adhesive layer, and an intermediate layer. The first insulating layer may include a first insulating film. The first insulating layered structure has a first hole. The capacitor is disposed in the first hole. The capacitor may include bottom and top electrodes and a capacitive insulating film. The capacitive insulating film is sandwiched between the bottom and top electrodes. The adhesive layer contacts with the bottom electrode. The adhesive layer has adhesiveness to the bottom electrode. The intermediate layer is interposed between the adhesive layer and the first insulating film. The intermediate layer contacts with the adhesive layer and with the first insulating film. The intermediate layer has adhesiveness to the adhesive layer and to the first insulating film.
    Type: Application
    Filed: July 12, 2007
    Publication date: February 7, 2008
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Yoshitaka NAKAMURA
  • Multi-anode type photomultiplier tube and radiation detector
    Publication number: 20080007173
    Abstract: A side tube includes a tube head, a funnel-shaped connection neck, and a tube main body, which are arranged along a tube axis and which are integrated together into the side tube. The size of a cross section of the tube head perpendicular to the tube axis is larger than the size of a cross section of the tube main body perpendicular to the tube axis. The radius of curvature of rounded corners of the tube head is smaller than the radius of curvature of rounded corners of the tube main body. The length of the tube head along the tube axis is shorter than the length of the tube main body along the tube axis. One surface of a faceplate is connected to the tube head. A photocathode is formed on the surface of the faceplate in its area located inside the tube head.
    Type: Application
    Filed: September 17, 2007
    Publication date: January 10, 2008
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Teruhiko Yamaguchi, Suenori Kimura, Minoru Suzuki, Yoshitaka Nakamura
  • Semiconductor memory device capable of canceling out noise development
    Publication number: 20070297257
    Abstract: A dynamic RAM incorporates a plurality of dynamic memory cells, each of which comprises a MOSFET having a gate set as a select terminal, one source and drain set as input/output terminals, and the other source and drain connected to storage nodes of the capacitor and a capacitor, a plurality of word lines respectively connected to the select terminals of the plurality of dynamic memory cells, a plurality of complementary bit line pairs respectively connected to the input/output terminals of the plurality of dynamic memory cells, and a sense amplifier array comprising a plurality of latch circuits which respectively amplify differences in voltage between the complementary bit line pairs placed so as to extend in directions opposite to each other from each pair of input/output terminals. Power supply lines are provided in mesh form inclusive of a portion above word drivers.
    Type: Application
    Filed: August 17, 2007
    Publication date: December 27, 2007
    Inventors: Tomonori Sekiguchi, Kazuhiko Kajigaya, Katsutaka Kimura, Riichiro Takemura, Tsugio Takahashi, Yoshitaka Nakamura
  • Power seat slide device for vehicle
    Patent number: 7303223
    Abstract: A power seat slide device for a vehicle includes a first rail fixed on a vehicle floor, a second rail fixed at a vehicle seat, a first rolling body, a second rolling body, a screw shaft having a shaft center, a gear box including a gear housing and a supporting bracket and a plate, the supporting bracket including a main unit portion and extending portions, the main unit portion engaging with a top end surface of each of the second side wall portions and a top end surface of the cover portion and each of extending portions extends outward in a width direction thereof from the main unit portion and engaging with a top end surface of the base end portion of each of the second folded wall portions.
    Type: Grant
    Filed: April 5, 2006
    Date of Patent: December 4, 2007
    Assignee: Aisin Seiki Kabushiki Kaisha
    Inventors: Yoshitaka Nakamura, Toshihiro Kimura
  • Semiconductor device including a capacitor having reduced leakage current
    Publication number: 20070269954
    Abstract: A process for forming bottom and top electrodes of a capacitor uses a source gas including tungsten nitride carbide (WNC) which contains no chlorine, to form an amorphous electrode film. This prevents the amorphous capacitor insulation from being crystallized, and also prevents addition of chlorine into the capacitor insulation film, during a later heat treatment. Prevention of crystallization and addition of chlorine suppresses deterioration of the capacitor insulation film, to thereby reduce the leakage current across the capacitor insulation film.
    Type: Application
    Filed: May 18, 2007
    Publication date: November 22, 2007
    Applicant: ELPIDA MEMORY, INC.
    Inventors: Yoshitaka Nakamura, Tomohiro Uno
  • Micro-oscillation element
    Publication number: 20070268549
    Abstract: A micro-oscillation element includes an oscillation section and a frame. The oscillation section is provided with a mirror surface and is connected to the frame via trapezoidal first and second springs. The oscillation section is located between the first spring and the second spring. Each of the first spring and the second spring is deformable along with the oscillation of the oscillation section.
    Type: Application
    Filed: July 25, 2007
    Publication date: November 22, 2007
    Applicants: FUJITSU LIMITED, FUJITSU MEDIA DEVICES LIMITED
    Inventors: Mi Xiaoyu, Satoshi Ueda, Hisao Okuda, Osamu Tsuboi, Hiromitsu Soneda, Norinao Kouma, Ippei Sawaki, Yoshitaka Nakamura
  • Hemispherical silicon grain capacitor with variable grain size
    Patent number: 7298002
    Abstract: A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: November 20, 2007
    Assignee: Elpida Memory Inc.
    Inventors: Hiroyuki Kitamura, Yuki Togashi, Hiroyasu Kitajima, Noriaki Ikeda, Yoshitaka Nakamura, Eiichiro Kakehashi
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A LANDING PAD
    Publication number: 20070264818
    Abstract: A process for manufacturing a semiconductor device includes the steps of: forming a metal plug in a contact hole of an isolation film; growing a tungsten film in self-alignment with the metal plug by using a selective CVD technique to form a landing pad on the metal plug and a portion of the insulation film in the vicinity of the contact hole, and forming a capacitor having a bottom electrode in contact with the landing pad.
    Type: Application
    Filed: May 9, 2007
    Publication date: November 15, 2007
    Applicant: ELPIDA MEMORY, INC.
    Inventor: Yoshitaka NAKAMURA
  • Multi-anode type photomultiplier tube and radiation detector
    Patent number: 7285783
    Abstract: A side tube includes a tube head, a funnel-shaped connection neck, and a tube main body, which are arranged along a tube axis and which are integrated together into the side tube. The size of a cross section of the tube head perpendicular to the tube axis is larger than the size of a cross section of the tube main body perpendicular to the tube axis. The radius of curvature of rounded corners of the tube head is smaller than the radius of curvature of rounded corners of the tube main body. The length of the tube head along the tube axis is shorter than the length of the tube main body along the tube axis. One surface of a faceplate is connected to the tube head. A photocathode is formed on the surface of the faceplate in its area located inside the tube head.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: October 23, 2007
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Teruhiko Yamaguchi, Suenori Kimura, Minoru Suzuki, Yoshitaka Nakamura
  • Dynamic random access memory (DRAM) capable of canceling out complementary noise development in plate electrodes of memory cell capacitors
    Patent number: 7274613
    Abstract: A dynamic RAM incorporates a plurality of dynamic memory cells, each of which comprises a MOSFET having a gate set as a select terminal, one source and drain set as input/output terminals, and the other source and drain connected to storage nodes of a capacitor, a plurality of word lines respectively connected to the select terminals of the plurality of dynamic memory cells, a plurality of complementary bit line pairs respectively connected to the input/output terminals of the plurality of dynamic memory cells, and a sense amplifier array comprising a plurality of latch circuits which respectively amplify differences in voltage between the complementary bit line pairs placed so as to extend in directions opposite to each other from each pair of input/output terminals. Power supply lines are provided in mesh form inclusive of a portion above word drivers.
    Type: Grant
    Filed: August 8, 2005
    Date of Patent: September 25, 2007
    Assignee: Elpida Memory, Inc.
    Inventors: Tomonori Sekiguchi, Kazuhiko Kajigaya, Katsutaka Kimura, Riichiro Takemura, Tsugio Takahashi, Yoshitaka Nakamura
  • Micro-oscillation element incorporating springs
    Patent number: 7262541
    Abstract: A micro-oscillation element includes an oscillation section and a frame. The oscillation section is provided with a mirror surface and is connected to the frame via trapezoidal first and second springs. The oscillation section is located between the first spring and the second spring. Each of the first spring and the second spring is deformable along with the oscillation of the oscillation section.
    Type: Grant
    Filed: March 4, 2004
    Date of Patent: August 28, 2007
    Assignee: Fujitsu Limited
    Inventors: Mi Xiaoyu, Satoshi Ueda, Hisao Okuda, Osamu Tsuboi, Hiromitsu Soneda, Norinao Kouma, Ippei Sawaki, Yoshitaka Nakamura
  • Exhaust gas purifying device and exhaust gas purifying method in internal combustion engine
    Publication number: 20070172397
    Abstract: Collectors are provided on a pair of exhaust passages extending in parallel from an internal combustion engine respectively. Each of the collectors collects black smoke particles (unclean substance) included in exhaust gas. One of a pair of differential pressure detectors detects a first differential pressure between upstream and downstream of one of the collectors while the other differential pressure detector detects a second differential pressure between upstream and downstream of the other collector. Upon finishing a regeneration process of removing the black smoke particles in each of the collectors, a control computer estimates an exhaust gas flow rate of each of the exhaust passages based on the first differential pressure and the second differential pressure.
    Type: Application
    Filed: February 14, 2005
    Publication date: July 26, 2007
    Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Yuji Narita, Yoshiyuki Takahashi, Takeshi Imai, Hisanobu Suzuki, Yoshitaka Nakamura
  • MEMORY WITH MEMORY CELLS THAT INCLUDE A MIM TYPE CAPACITOR WITH A LOWER ELECTRODE MADE FOR REDUCED RESISTANCE AT AN INTERFACE WITH A METAL FILM
    Publication number: 20070148896
    Abstract: A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.
    Type: Application
    Filed: November 27, 2006
    Publication date: June 28, 2007
    Inventors: Yoshitaka Nakamura, Hidekazu Goto, Isamu Asano, Mitsuhiro Horikawa, Keiji Kuroki, Hiroshi Sakuma, Kenichi Koyanagi, Tsuyoshi Kawagoe
  • Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film
    Patent number: 7224016
    Abstract: A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: May 29, 2007
    Assignees: Elpida Memory, Inc., Hitachi ULSI Systems, Co., Ltd., Hitachi Ltd.
    Inventors: Yoshitaka Nakamura, Hidekazu Goto, Isamu Asano, Mitsuhiro Horikawa, Keiji Kuroki, Hiroshi Sakuma, Kenichi Koyanagi, Tsuyoshi Kawagoe
  • Exhaust purifying apparatus for internal combustion engine
    Publication number: 20070079607
    Abstract: An internal combustion engine has a separate exhaust passage for each one of banks. An exhaust purifying catalyst is provided in each exhaust passage. The mass flow rates G1, G2 of exhaust gas that flow through the exhaust passages are individually estimated. The flow rate of exhaust gas is individually adjusted per each bank by controlling the operation of each one of exhaust gas recirculation valves such that the difference between the estimated mass flow rates G1, G2 is decreased.
    Type: Application
    Filed: March 14, 2005
    Publication date: April 12, 2007
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Hisanobu Suzuki, Yoshitaka Nakamura, Yoshiyuki Takahashi, Yuzuru Ikeda, Shinichi Kusakabe, Tadashi Toyota
  • Micro-oscillation element and method for driving the same
    Publication number: 20070063614
    Abstract: A micro-oscillation element includes a movable main section, a first frame and a second frame, and a first connecting section that connects the movable main section and the first frame and defines a first axis of rotation for a first rotational operation of the movable main section with respect to the first frame. The element further includes a second connecting section that connects the first frame and the second frame and defines a second axis of rotation for a second rotational operation of the first frame and the movable main section with respect to the second frame. A first drive mechanism is provided for generating a driving force for the first rotational operation. A second drive mechanism is provided for generating a driving force for the second rotational operation. The first axis of rotation and the second axis of rotation are not orthogonal.
    Type: Application
    Filed: November 22, 2006
    Publication date: March 22, 2007
    Applicant: FUJITSU LIMITED
    Inventors: Osamu Tsuboi, Norinao Kouma, Hisao Okuda, Hiromitsu Soneda, Mi Xiaoyu, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
  • Method for manufacturing micro-structural unit
    Patent number: 7192879
    Abstract: A method for manufacturing a micro-structural unit is provided. By the method, micro-machining is performed on a material substrate including first through third conductive layers and two insulating layers, one of which is interposed between the first and the second conductive layers, and the other between the second and the third conductive layers. The method includes several etching steps performed on the layers of the material substrate that are different in thickness.
    Type: Grant
    Filed: August 22, 2005
    Date of Patent: March 20, 2007
    Assignee: Fujitsu Limited
    Inventors: Norinao Kouma, Osamu Tsuboi, Hisao Okuda, Hiromitsu Soneda, Mi Xiaoyu, Satoshi Ueda, Ippei Sawaki, Yoshitaka Nakamura
  • Semiconductor storage device and method for manufacturing the same
    Publication number: 20070057306
    Abstract: A semiconductor storage device is manufactured by the following steps. A cylindrical hole is formed in an interlayer insulating film. Then, a multilayer conductive layer including a first sublayer and a second sublayer is formed over the entire surface of the insulating interlayer including the internal surface of the hole. The second sublayer has a higher nitrogen content than the first sublayer. A cup-like lower electrode is formed by reactive ion etching of the conductive layer under conditions that the second sublayer is etched faster than the first sublayer, so that the conductive layer remains only on the internal surface of the hole, and so that the upper edge of the remaining conductive layer forms an angle of 45° or less with the internal wall of the hole. Then, a capacitor insulating layer and an upper electrode are formed in that order on the lower electrode.
    Type: Application
    Filed: September 12, 2006
    Publication date: March 15, 2007
    Inventors: Yoshitaka Nakamura, Keiji Kuroki