Abstract: The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials.

Abstract: The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials.

Abstract: The present invention provides a metallic material for electronic components having a low degree of whisker formation and a high durability, and connector terminals, connectors and electronic components using the metallic material. The metallic material for electronic components includes: a base material; on the base material, an lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; on the lower layer, an upper layer constituted with an alloy composed of one or both of Sn and In (constituent elements A) and one or two or more of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B), wherein the thickness of the lower layer is 0.05 ?m or more; the thickness of the upper layer is 0.005 ?m or more and 0.

Abstract: There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance.

Abstract: There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 ?m, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 ?m.

Abstract: A material for fuel cell separator, wherein a surface layer 6 containing Au and Cr is formed on a surface of a Ti base 2, and an intermediate layer 2a containing Ti, O, Cr, and less than 20 atomic % of Au is present between the Ti base and the surface layer, a thickness of an area containing 65 atomic % or more of Au being 1.5 nm or more, a maximum concentration of Au being 80 atomic % or more, a coating amount of Au being 9000 to 40000 ng/cm2, a ratio represented by (Au coating amount)/(Cr coating amount) being 10 or more, a coating amount of Cr being 200 ng/cm2 or more, and in the intermediate layer having an area containing 10% or more of Ti, 10% or more of O and 20% or more of Cr being 1 nm or more.

Abstract: A fuel cell separator material, comprising an alloy layer 6 containing Au and a first component containing Al, Cr, Co, Ni, Cu, Mo, Sn or Bi, or an Au single layer 8 formed on a stainless steel base 2, and an intermediate layer 2a containing 20 mass % or more of the first component, and from 20 mass % or more to less than 50 mass % of arranged between the alloy layer and the base, wherein the alloy layer has a region having a thickness of 1 nm or more from the uppermost surface toward the lower layer and containing 40 mass % or more of Au, or a region having a thickness of 3 nm or more from the uppermost surface toward the lower layer and containing 10 mass % or more to less than 40 mass % of Au.

Abstract: A fuel cell separator material, comprising an alloy layer 6 containing Au and a first component containing Al, Cr, Fe, Co, Ni, Cu, Mo, Sn or Bi, or an Au single layer 8 formed on a Ti base 2; an intermediate layer 2a containing Ti, O, the first component, and less than 20 mass % of Au arranged between the alloy layer or the Au single layer and the Ti base; wherein the alloy layer or the Au single layer has a region having a thickness of 1 nm or more from the uppermost to the lower layer and containing 50 mass % or more of Au, or a region having a thickness of 3 nm or more from the uppermost to the lower layer and containing Au in the range from 10-50 mass %, or the thickness of the Au single layer is 1 nm or more.

Abstract: Input subband samples are requantized by a requantizing circuit and the results are stored in a DCT memory as DCT samples for discrete cosine transform. A DCT circuit applies a discrete cosine transform to the DCT samples stored in the DCT memory and stores the results in a band synthesis memory as band synthesis samples. When storing these band synthesis samples in the band synthesis memory, the storage area for each band synthesis sample is designated by alternately switching between two types of addresses generated by a first and second address generating circuits and the timing of processing by the DCT circuit is controlled in accordance with the band synthesis samples necessary for the calculation of output audio samples.

Abstract: A sound signal processing circuit which independently calculates left and right mask levels of sub-band sound samples. A fast Fourier transform circuit performs a fast Fourier transform on input sound samples, and outputs first power spectrum samples decreased to one-half the input sound samples. A sub-sampling circuit produces a prescribed number of second power spectrum samples by sub-sampling processing of adding power spectrum samples by a prescribed number to make a single spectrum. A mask calculating circuit calculates a mask level of second power spectrum samples by determining a contour expressed in a prescribed unit mask function for every second power spectrum sample as a mask for every power spectrum sample, and adds the masks of the respective power spectrum samples.

Abstract: In an audio signal processing circuit for carrying out a subband coding used for an audio signal coding, a subband filter (12A) receives 1152 audio samples (SI) of each one frame and divides the samples into 32 frequency bands to sequentially output a vector of first half subband signals (SFA) for a first half of the one frame and a vector of second half subband signals (SFB) for a second half of the one frame. A FFT circuit (111A) carries out an FFT processing for 512 audio samples of each of the first half and the second half of each one frame, to sequentially generate a first half power spectrum (PSA) and a second half power spectrum (PSB). A calculating circuit (113A) calculates a first half SMR vector (SMA) on the basis of the first half subband signals (SFA) and the first half power spectrum (PSA), and then, a second half SMR vector (SMB) on the basis of the second half subband signals (SFB) and the second half power spectrum (PSB).

Abstract: A speech signal processing circuit includes an input buffer for receiving inverse quantization samples and for temporarily storing those samples. The circuit also includes a band synthesis filter for reading the inverse quantization samples stored in the input buffer one by one, and for conducting quadrature conversion processing and sum-of-product operation processing to decode the samples into speech signals. The circuit further includes a control circuit for controlling operation of the band synthesis filter. When the inverse quantization samples are recognized as being stored in the input buffer, the control circuit controls the band synthesis filter to execute, as an initial operation, the quadrature conversion processing of the inverse quantization samples as many times as a number corresponding to an operation delay time of the band synthesis filter.