Abstract: Provided is a production facility for liquefied hydrogen and a liquefied natural gas from a natural gas, including: a first heat exchanger configured to cool a hydrogen gas through heat exchange between the hydrogen gas and a mixed refrigerant for liquefying a natural gas containing a plurality of kinds of refrigerants selected from the group consisting of methane, ethane, propane, and nitrogen; a second heat exchanger configured to cool the mixed refrigerant through heat exchange between the mixed refrigerant and propane; and a third heat exchanger configured to cool the hydrogen gas through heat exchange between the hydrogen gas and a refrigerant containing hydrogen or helium, wherein the first heat exchanger has a precooling temperature of from ?100° C. to ?160° C.

Abstract: A sound processing apparatus includes a processor to obtain sound data and image data, wherein the sound data is collected from a sound source in a given area by a sound collection unit including a plurality of microphones and the image data is captured by an imaging unit which captures an image at least partially in the given area, to designate a direction defined relative to the sound collection unit, wherein the designated direction corresponds to a designation part on an image displayed based on the image data, to designate an arbitrary range in the given area, wherein the designated arbitrary range corresponds to a designation part on the image displayed based on the image data, and to emphasize a sound component in the sound data in the direction designated by the first designation unit within the arbitrary range designated by the second designation unit.

Abstract: A polyimide precursor comprising a repeating unit represented by the following chemical formula (1): in which A is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, wherein the polyimide precursor comprises at least one type of repeating unit represented by the chemical formula (1) in which A is a group represented by chemical formula (2) or (3): in which m independently represents 0 to 3 and n independently represents 0 to 3; Y1, Y2 and Y3 each independently represent at least one selected from the group consisting of hydrogen atom, methyl group and trifluoromethyl group; and Q and R each independently represent direct bond, or at least one of —NHCO—, —CONH—, —COO— and —OCO—, in which Z and W each independently represent a divalent aromatic group having 6 to 18 carbon atoms; and Y4 rep

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens to generate electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein: the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along a direction of an optical axis of the microlens.

Abstract: To respond to an n-bit digital signal, a speaker (1) is provided that includes an sound pressure generator (10) including 2i?1 piezoelectric elements (51, 52, and 53) for an i-th bit, and a total of 2n?1 stacked piezoelectric elements (51, 52, and 53). Due to divided vibration of the piezoelectric elements (51, 52, and 53), the speaker (1) has low directionality. Planar electrodes (80, 81, 82, and 83), to which voltage is applied, are provided between the piezoelectric elements (51, 52, and 53). By this means, all the piezoelectric elements can be driven using similar voltages, and high sound quality can be obtained without a problem of unit-to-unit differences between voltage sources.

Abstract: An image sensor includes: a semiconductor substrate having a light receiving unit that receives incident light passed through a microlens; and a light shielding unit that blocks a part of the light passed through the microlens and enters the semiconductor substrate. The light receiving unit receives the incident light passed through the microlens, between the microlens and the light shielding unit.

Abstract: A digital speaker (1) is provided that is equipped with a piezoelectric element (4) including n electrodes (51, 52, 53) spaced apart from one another. Sound pressure is adjusted according to the surface area of the electrodes (51, 52, 53), and all the electrodes (51, 52, 53) can be driven by the same voltage. A speaker system is provided that uses the digital speaker (1) as a tweeter (11), or as all the speakers including a woofer (13). By this speaker system, earphones (8) are provided that are miniaturized and have high sound quality.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes, in order: polishing a silicon carbide semiconductor base body from a second main surface side thus forming unevenness on a second main surface; forming a thin metal film made of metal capable of forming a metal carbide on the second main surface of the silicon carbide semiconductor base body; irradiating a laser beam which falls within a visible region or within an infrared region to the thin metal film so as to heat the thin metal film thus forming a metal carbide on a boundary face between the silicon carbide semiconductor base body and the thin metal film; etching a metal containing byproduct layer possibly formed on a surface side of the metal carbide by a non-oxidizing chemical solution thus exposing a surface of the metal carbide; and forming a cathode electrode on the metal carbide.

Abstract: A speaker which drives a dynamic speaker with one amplifier is provided which has an excellent frequency characteristic. This speaker 3 is provided with a dynamic speaker 2, a piezoelectric speaker 3, and one current amplifier 4 which drives both the dynamic speaker 2 and the piezoelectric speaker 3. Defining Zd as the rated impedance of the dynamic speaker 2 and Zp(?) as the impedance of the piezoelectric element 31, by stipulating that the frequency values ? at which Zd=Zp(?) are 20-50 kHz, a superior high-range frequency characteristic is achieved.

Abstract: To respond to an n-bit digital signal, a speaker (1) is provided that includes an sound pressure generator (10) including 2i-1 piezoelectric elements (51, 52, and 53) for an i-th bit, and a total of 2n?1 stacked piezoelectric elements (51, 52, and 53). Due to divided vibration of the piezoelectric elements (51, 52, and 53), the speaker (1) has low directionality. Planar electrodes (80, 81, 82, and 83), to which voltage is applied, are provided between the piezoelectric elements (51, 52, and 53). By this means, all the piezoelectric elements can be driven using similar voltages, and high sound quality can be obtained without a problem of unit-to-unit differences between voltage sources.

Abstract: An earphone (1) is provided that includes a first vibration plate (31) for vibration by a first piezoelectric element (32) and a cylindrically-shaped casing (2) for transmission of the vibration of the first vibration plate (31) to ear canal cartilage. The first vibration plate (31) is disposed inside the casing (2). The earphone (1) has a structure whereby an amount of sound leakage, which is due to transmission of the vibration of the first vibration plate (31) to the air, is low. The ear canal cartilage transmits sound to the eardrum of only one ear, thereby enabling localization of sound. The woofer (3) maintains sound pressure at low frequencies.

Abstract: A digital speaker (1) is provided that is equipped with a piezoelectric element (4) including n electrodes (51, 52, 53) spaced apart from one another. Sound pressure is adjusted according to the surface area of the electrodes (51, 52, 53), and all the electrodes (51, 52, 53) can be driven by the same voltage. A speaker system is provided that uses the digital speaker (1) as a tweeter (11), or as all the speakers including a woofer (13). By this speaker system, earphones (8) are provided that are miniaturized and have high sound quality.

Abstract: A piezoelectric speaker has a piezoelectric element and vibration plate. The piezoelectric element has a base body with a mounting surface, as well as first and second terminals that are formed on the mounting surface with a distance between them. The vibration plate has a conductive body joined to the piezoelectric element and having a principle surface facing the mounting surface, as well as a first hole with or without a bottom which is formed on the principle surface in a region facing the first terminal to form a space between the body and first terminal. The piezoelectric speaker is capable of preventing the external electrodes of the piezoelectric element from shorting to each other.

Abstract: The present invention provides a speaker that excels in frequency response in a high sound range and that can be produced stably, and an earphone in which the speaker is used. Provided are: a speaker 1 provided with a woofer 2 supported by a mold 23, a tweeter 3 in which a piezoelectric element 31 is attached to a diaphragm 32, and three or more supports 33 protruding from the peripheral edge of the diaphragm 32, the supports 33 being secured to the mold 23 and forming a gap between the diaphragm 32 and the mold 23; and an earphone in which the speaker 1 is used. The sound of the woofer 2 can be propagated from the gap.

Abstract: A method for manufacturing a silicon carbide semiconductor device comprises: a step for forming a front-surface electrode (30) on a front surface side of a silicon carbide wafer (10); a step for thinning the silicon carbide wafer (10) by reducing a thickness of the silicon carbide wafer (10) from a back surface side thereof; a step for providing a metal layer (21) on the back surface of the thinned silicon carbide wafer (10); a step for irradiating the metal layer (21) with laser light, while applying an external force such that the silicon carbide wafer and the metal layer are planarized, to form the carbide layer (20) obtained by a reaction with carbon in the silicon carbide wafer (10), on a back surface side of the metal layer (21); and a step for forming a back-surface electrode (40) on a back surface side of the carbide layer (20).

Abstract: In an embodiment, a surface of a smartphone 10 is covered with a transparent protective panel 22 supported by rims 16 of a housing 12, and a display device 18 and touch panel 20 are placed in a storage part 14 of the housing 12. The protective panel 22 is constituted by joining a glass plate 22A and resin plate 22B together, and concave parts 30A, 30B are provided on the joining surface side of the resin plate 22B, with piezoelectric vibrating elements 40 placed therein and joined to the glass plate 22A, wherein vibration is transmitted to the surface of the protective panel 22 as surface acoustic waves, demonstrating a haptic function, and also, audible vibration is generated because the modulus of elasticity of the resin plate 22B is lower than that of the glass plate 22A, achieving an operation as a speaker (or receiver).

Abstract: A method for manufacturing a silicon carbide semiconductor device comprises: a step for forming a front-surface electrode (30) on a front surface side of a silicon carbide wafer (10); a step for thinning the silicon carbide wafer (10) by reducing a thickness of the silicon carbide wafer (10) from a back surface side thereof; a step for providing a metal layer (21) on the back surface of the thinned silicon carbide wafer (10); a step for irradiating the metal layer (21) with laser light, while applying an external force such that the silicon carbide wafer and the metal layer are planarized, to form the carbide layer (20) obtained by a reaction with carbon in the silicon carbide wafer (10), on a back surface side of the metal layer (21); and a step for forming a back-surface electrode (40) on a back surface side of the carbide layer (20).

Abstract: A piezoelectric material contains ferroelectric particles and an adhesive resin. The ratio of the ferroelectric particles relative to the total mass of the ferroelectric particles and the adhesive resin is 40 mass % or greater and 98 mass % or less.

Abstract: A piezoelectric drive element includes piezoelectric layers, electrode layers between the piezoelectric layers, and electrode layers as the surfaces of the laminated layers. The piezoelectric layers are arranged on the upper side and on the lower side with reference to the center in the thickness direction, and are polarized in opposite directions. The thicknesses of piezoelectric layers at the center which have the least displacement are the thickest. The thicknesses of the piezoelectric layers above and under the thickest piezoelectric layers decrease gradually in an outward direction. A piezoelectric sound-generating body is constructed by affixing the piezoelectric driving element to a support plate and supporting the piezoelectric driving element with a frame.

Abstract: A polyimide precursor comprising at least one repeating unit represented by the following chemical formula (5): in which A3 is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X3 and Y3 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, and/or at least one repeating unit represented by the following chemical formula (6): in which A3 is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X4 and Y4 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms.