Abstract: An electroacoustic transducer has a housing, piezoelectric speaker, dynamic speaker, and support member. The piezoelectric speaker includes a vibration plate having a first surface and a second surface on the opposite side of the first surface, as well as a piezoelectric element joined to at least one of the first surface and second surface, and divides the interior of the housing into a first space facing the first surface and a second space facing the second surface. The dynamic speaker is placed in the first space. The support member is constituted by a part of the housing or by a member different from the housing, has a supporting part facing the first surface or second surface, and supports the periphery of the first surface or second surface with the supporting part.

Abstract: A polyimide precursor consisting of a repeating unit represented by the following chemical formula (1): and a repeating unit represented by the following chemical formula (2): in which A is a tetravalent group of a tetracarboxylic acid, from which carboxyl groups have been removed; B is a divalent group of a diamine, from which amino groups have been removed; with the proviso that the A group and the B group contained in each repeating unit may be the same as, or different from each other; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, the amount of the repeating unit represented by the chemical formula (2) is 30 mol % or more and 90 mol % or less relative to the total repeating units, 50 mol % or more of the total amount of the B group in the chemical formula (1) and the chemical formula (2) is p-phenylene group and/or a specific divalent group containing two or more benzene rings, the polyimide pr

Abstract: A piezoelectric material contains ferroelectric particles and an adhesive resin. The ratio of the ferroelectric particles relative to the total mass of the ferroelectric particles and the adhesive resin is 40 mass % or greater and 98 mass % or less.

Abstract: A method for manufacturing a semiconductor device includes forming a thermal oxide film on one surface of an SiC substrate by thermal oxidation at a temperature of 1150° C. or above in a gas atmosphere including nitrogen and oxygen, and introducing highly-concentrated nitrogen to one surface of the SiC substrate while forming the thermal oxide film; forming a highly-concentrated n-type SiC layer on one surface of the SiC substrate such that the thermal oxide film is removed from one surface of the SiC substrate by etching and, thereafter, one surface of the SiC substrate is exposed to radicals so that Si—N bonded bodies and C—N bonded bodies on one surface of the SiC substrate are removed while leaving nitrogen introduced into a lattice of SiC out of highly-concentrated nitrogen introduced into one surface of the SiC substrate; and forming an ohmic electrode layer on one surface of the SiC substrate.

Abstract: The present invention relates to a polyimide precursor comprising a repeating unit represented by the following chemical formula (1): wherein A is a tetravalent group having at least one aliphatic six membered ring and no aromatic ring in the chemical structure, and B is a divalent group having at least one amide bond and an aromatic ring in the chemical structure; or A is an aliphatic tetravalent group and B is a divalent group having at least one chemical structure represented by the following chemical formula (2) in the chemical structure: and X1 and X2 are each independently hydrogen, a C1-6 alkyl group or a C3-9 alkylsilyl group.

Abstract: A polyimide precursor comprising a repeating unit represented by the following chemical formula (1): in which A is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, wherein the polyimide precursor comprises at least one type of repeating unit represented by the chemical formula (1) in which A is a group represented by chemical formula (2) or (3): in which m independently represents 0 to 3 and n independently represents 0 to 3; Y1, Y2 and Y3 each independently represent at least one selected from the group consisting of hydrogen atom, methyl group and trifluoromethyl group; and Q and R each independently represent direct bond, or at least one of —NHCO—, —CONH—, —COO— and —OCO—, in which Z and W each independently represent a divalent aromatic group having 6 to 18 carbon atoms; and Y4 repre

Abstract: In a piezoelectric oscillation device in which a support substrate is oscillated using a bimorph-type piezoelectric oscillation element, the click sensation when the support substrate is operated is improved, and shock resistance of a control panel is improved. Provided is a piezoelectric oscillation device in which wiring is not easily broken. On the rear side of a touch panel (16), one main surface of a bimorph-type piezoelectric oscillation element (20) is entirely bonded via an elastic body (18) having a tensile elasticity of 20-100 MPa as measured according to JIS K7161. The piezoelectric oscillation element (20) has surface electrode layers (30A, 30B) connected to terminal electrodes (36A, 36B) via wiring lines (38A, 38B). The wiring lines (38A, 38B) are formed on top of a wiring protection layer (32) made of an elastic body provided on the rear side of the touch panel (16), and because the wiring lines can move following the displacement and are therefore resistant to breakage.

Abstract: A sound processing apparatus includes a processor to obtain sound data and image data, wherein the sound data is collected from a sound source in a given area by a sound collection unit including a plurality of microphones and the image data is captured by an imaging unit which captures an image at least partially in the given area, to designate a direction defined relative to the sound collection unit, wherein the designated direction corresponds to a designation part on an image displayed based on the image data, to designate an arbitrary range in the given area, wherein the designated arbitrary range corresponds to a designation part on the image displayed based on the image data, and to emphasize a sound component in the sound data in the direction designated by the first designation unit within the arbitrary range designated by the second designation unit.

Abstract: A polyimide precursor comprising at least one repeating unit represented by the following chemical formula (5): in which A3 is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X3 and Y3 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, and/or at least one repeating unit represented by the following chemical formula (6): in which A3 is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X4 and Y4 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms.

Abstract: A polyimide comprising a repeating unit represented by the following chemical formula in which A is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, wherein the polyimide precursor comprises at least two types of repeating units represented by the chemical formula (1) in which A is a group represented by any one of the following chemical formulas (2-1), (2-2), (3) and (4): in which a polyimide obtained from the polyimide precursor has a coefficient of linear thermal expansion from 50° C. to 200° C. of 50 ppm/K or less and a transmittance at 400 nm of 75% or more in the form of a polyimide film having a thickness of 10 ?m.

Abstract: With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

Abstract: A sound processing apparatus includes a data obtaining unit, configured to obtain sound data collected by a sound collection unit including a plurality of microphones and image data captured by an imaging unit, a designation unit, configured to designate a plurality of directions defined relative to the sound collection unit, wherein the plurality of directions correspond to designation parts on an image displayed based on the image data, and a directivity processing unit, configured to emphasize sound components in the sound data in the plurality of directions designated by the designation unit

Abstract: A polyimide precursor including at least one repeating unit represented by the following chemical formula (1): in which A is an arylene group; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, and a polyimide obtained from the polyimide precursor has a coefficient of linear thermal expansion from 50° C. to 400° C. of 100 ppm/K or less.

Abstract: With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

Abstract: A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

Abstract: A steel for a welded structure includes the following composition: by mass %, C at a C content [C] of 0.010 to 0.065%; Si at a Si content [Si] of 0.05 to 0.20%; Mn at a Mn content [Mn] of 1.52 to 2.70%; Ni at a Ni content [Ni] of 0.10% to 1.50%; Ti at a Ti content [Ti] of 0.005 to 0.015%; O at an O content [O] of 0.0010 to 0.0045%; N at a N content [N] of 0.002 to 0.006%; Mg at a Mg content [Mg] of 0.0003 to 0.003%; Ca at a Ca content [Ca] of 0.0003 to 0.003%; and the balance composed of Fe and unavoidable impurities. A steel component parameter PCTOD is 0.065% or less, and a steel component hardness parameter CeqH is 0.235% or less.

Abstract: A touch panel device, includes a transparent protective substrate disposed on a front side of the touch panel, the protective substrate being configured by joining a first glass substrate residing on a front side and a second glass substrate residing on a touch panel side, wherein either one of the first and second glass substrates is configured to have one or more stepped portions formed either on a rear surface of the first glass substrate or a front surface of the second glass substrate, the rear surface of the first glass substrate and the front surface of the second glass substrate facing one another; and one or more piezo vibration elements each disposed within one of the stepped portions so as to be acoustically coupled with the first glass substrate, wherein each of said one or more stepped portions is configured thicker than the corresponding piezo vibration element.

Abstract: A gas mixing device capable of safely mixing flammable gas containing, for example, methane or the like and combustion supporting gas such as oxygen-containing gas, and a synthesis gas producing device using this gas mixing device. Flammable gas containing methane or the like and combustion supporting gas such as oxygen-containing gas are supplied into a mixing vessel via a first gas supplying section and a second gas supplying section respectively, and these gases are mixed within a combustion range in the vessel to be discharged via a discharge section. In the mixing vessel, packings for forming a large number of narrow gas flow passages in the vessel are packed so that velocity of the mixed gas flowing in the vessel becomes higher than burning velocity of the flammable gas and the combustion supporting gas.

Abstract: A steel for welding includes steel components in which PCTOD is less than or equal to 0.065%, CeqH is less than or equal to 0.225%, FB is greater than or equal to 0.0003%, and Bp is 0.09% to 0.30%. In the steel for welding, in a thickness center portion of a cross-section in a thickness direction, the number of oxide particles having an equivalent circle diameter of 2 ?m or greater is less than or equal to 20 particles/mm2 and the number of Ti oxides having an equivalent circle diameter of 0.05 ?m to 0.5 ?m is 1.0×103 particles/mm2 to 1.0×105 particles/mm2.

Abstract: A piezoelectric drive element includes piezoelectric layers, electrode layers between the piezoelectric layers, and electrode layers as the surfaces of the laminated layers. The piezoelectric layers are arranged on the upper side and on the lower side with reference to the center in the thickness direction, and are polarized in opposite directions. The thicknesses of piezoelectric layers at the center which have the least displacement are the thickest. The thicknesses of the piezoelectric layers above and under the thickest piezoelectric layers decrease gradually in an outward direction. A piezoelectric sound-generating body is constructed by affixing the piezoelectric driving element to a support plate and supporting the piezoelectric driving element with a frame.