Abstract: A piezoelectric material contains ferroelectric particles and an adhesive resin. The ratio of the ferroelectric particles relative to the total mass of the ferroelectric particles and the adhesive resin is 40 mass % or greater and 98 mass % or less.

Abstract: The present invention relates to a polyimide precursor comprising a repeating unit represented by the following chemical formula (1): wherein A is a tetravalent group having at least one aliphatic six membered ring and no aromatic ring in the chemical structure, and B is a divalent group having at least one amide bond and an aromatic ring in the chemical structure; or A is an aliphatic tetravalent group and B is a divalent group having at least one chemical structure represented by the following chemical formula (2) in the chemical structure: and X1 and X2 are each independently hydrogen, a C1-6 alkyl group or a C3-9 alkylsilyl group.

Abstract: An electroacoustic transducer has a housing, piezoelectric speaker, dynamic speaker, and support member. The piezoelectric speaker includes a vibration plate having a first surface and a second surface on the opposite side of the first surface, as well as a piezoelectric element joined to at least one of the first surface and second surface, and divides the interior of the housing into a first space facing the first surface and a second space facing the second surface. The dynamic speaker is placed in the first space. The support member is constituted by a part of the housing or by a member different from the housing, has a supporting part facing the first surface or second surface, and supports the periphery of the first surface or second surface with the supporting part.

Abstract: In an embodiment, an electroacoustic transducer has a piezoelectric speaker 20, housing, and support member 23. The piezoelectric speaker 20 has a vibration plate 11 with a periphery 111, and a piezoelectric element 12 joined to the vibration plate 11. The housing houses the piezoelectric speaker 20. The support member 23 is constituted by a part of the housing or by a separate member, and supports the vibration plate 11 in multiple areas along the periphery 111. The electroacoustic transducer can offer excellent high-frequency characteristics.

Abstract: A gas mixing device capable of safely mixing flammable gas containing, for example, methane or the like and combustion supporting gas such as oxygen-containing gas, and a synthesis gas producing device using this gas mixing device. Flammable gas containing methane or the like and combustion supporting gas such as oxygen-containing gas are supplied into a mixing vessel via a first gas supplying section and a second gas supplying section respectively, and these gases are mixed within a combustion range in the vessel to be discharged via a discharge section. In the mixing vessel, packings for forming a large number of narrow gas flow passages in the vessel are packed so that velocity of the mixed gas flowing in the vessel becomes higher than burning velocity of the flammable gas and the combustion supporting gas.

Abstract: A use-side unit and an air conditioner that can feed out air at a target temperature into a target space are provided. A use-side evaporator that recovers moisture obtained by cooling and condensing the air to be fed out into the space to be air-conditioned or the like and dehumidifies it so as to obtain target relative humidity, a use-side condenser that heats the air having passed through the use-side evaporator by heat exchange, adjusts it to a target dry-bulb temperature and feeds it out into the space to be air-conditioned or the like, and a use-side controller that calculates a correction value if a difference between a dry-bulb temperature according to the detection of a temperature detector that detects a dry-bulb temperature of the air to be fed out into the target space and the target dry-bulb temperature is larger than a predetermined value and performs processing to correct a target intermediate dry-bulb temperature.

Abstract: A solid-state image sensor includes: a plurality of pixels, each including a photoelectric conversion unit and a charge accumulating unit that accumulates an electric charge from the photoelectric conversion unit; and a connection unit that includes a plurality of linking units each of which electrically connects the charge accumulating units of two adjacent pixels among the plurality of pixels.

Abstract: A method for manufacturing a semiconductor device includes forming a thermal oxide film on one surface of an SiC substrate by thermal oxidation at a temperature of 1150° C. or above in a gas atmosphere including nitrogen and oxygen, and introducing highly-concentrated nitrogen to one surface of the SiC substrate while forming the thermal oxide film; forming a highly-concentrated n-type SiC layer on one surface of the SiC substrate such that the thermal oxide film is removed from one surface of the SiC substrate by etching and, thereafter, one surface of the SiC substrate is exposed to radicals so that Si—N bonded bodies and C—N bonded bodies on one surface of the SiC substrate are removed while leaving nitrogen introduced into a lattice of SiC out of highly-concentrated nitrogen introduced into one surface of the SiC substrate; and forming an ohmic electrode layer on one surface of the SiC substrate.

Abstract: A steel for welding includes steel components in which PCTOD is less than or equal to 0.065%, CeqH is less than or equal to 0.225%, FB is greater than or equal to 0.0003%, and Bp is 0.09% to 0.30%. In the steel for welding, in a thickness center portion of a cross-section in a thickness direction, the number of oxide particles having an equivalent circle diameter of 2 ?m or greater is less than or equal to 20 particles/mm2 and the number of Ti oxides having an equivalent circle diameter of 0.05 ?m to 0.5 ?m is 1.0×103 particles/mm2 to 1.0×105 particles/mm2.

Abstract: With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer.

Abstract: A piezoelectric speaker has a piezoelectric element and vibration plate. The piezoelectric element has a base body with a mounting surface, as well as first and second terminals that are formed on the mounting surface with a distance between them. The vibration plate has a conductive body joined to the piezoelectric element and having a principle surface facing the mounting surface, as well as a first hole with or without a bottom which is formed on the principle surface in a region facing the first terminal to form a space between the body and first terminal. The piezoelectric speaker is capable of preventing the external electrodes of the piezoelectric element from shorting to each other.

Abstract: In an embodiment, a surface of a smartphone 10 is covered with a transparent protective panel 22 supported by rims 16 of a housing 12, and a display device 18 and touch panel 20 are placed in a storage part 14 of the housing 12. The protective panel 22 is constituted by joining a glass plate 22A and resin plate 22B together, and concave parts 30A, 30B are provided on the joining surface side of the resin plate 22B, with piezoelectric vibrating elements 40 placed therein and joined to the glass plate 22A, wherein vibration is transmitted to the surface of the protective panel 22 as surface acoustic waves, demonstrating a haptic function, and also, audible vibration is generated because the modulus of elasticity of the resin plate 22B is lower than that of the glass plate 22A, achieving an operation as a speaker (or receiver).

Abstract: In an embodiment, an electroacoustic transducer has a piezoelectric speaker 20, housing, and support member 23. The piezoelectric speaker 20 has a vibration plate 11 with a periphery 111, and a piezoelectric element 12 joined to the vibration plate 11. The housing houses the piezoelectric speaker 20. The support member 23 is constituted by a part of the housing or by a separate member, and supports the vibration plate 11 in multiple areas along the periphery 111. The electroacoustic transducer can offer excellent high-frequency characteristics.

Abstract: In an embodiment, an electroacoustic transducer has a piezoelectric speaker 20, housing, support member 73, and elastically deformable adhesive layer 74. The piezoelectric speaker 20 has a vibration plate 11 with a periphery 111, and a piezoelectric element 12 joined to the vibration plate 11. The housing houses the piezoelectric speaker 20. The support member 73 is constituted by a part of the housing or by a separate member, and supports the periphery 111. The adhesive layer 74 is provided between the periphery 111 and support member 73. The electroacoustic transducer can offer excellent high-frequency characteristics.

Abstract: An electroacoustic transducer has a housing, piezoelectric speaker, dynamic speaker, and support member. The piezoelectric speaker includes a vibration plate having a first surface and a second surface on the opposite side of the first surface, as well as a piezoelectric element joined to at least one of the first surface and second surface, and divides the interior of the housing into a first space facing the first surface and a second space facing the second surface. The dynamic speaker is placed in the first space. The support member is constituted by a part of the housing or by a member different from the housing, has a supporting part facing the first surface or second surface, and supports the periphery of the first surface or second surface with the supporting part.

Abstract: A polyimide precursor consisting of a repeating unit represented by the following chemical formula (1): and a repeating unit represented by the following chemical formula (2): in which A is a tetravalent group of a tetracarboxylic acid, from which carboxyl groups have been removed; B is a divalent group of a diamine, from which amino groups have been removed; with the proviso that the A group and the B group contained in each repeating unit may be the same as, or different from each other; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, the amount of the repeating unit represented by the chemical formula (2) is 30 mol % or more and 90 mol % or less relative to the total repeating units, 50 mol % or more of the total amount of the B group in the chemical formula (1) and the chemical formula (2) is p-phenylene group and/or a specific divalent group containing two or more benzene rings, the polyimide pr

Abstract: A piezoelectric material contains ferroelectric particles and an adhesive resin. The ratio of the ferroelectric particles relative to the total mass of the ferroelectric particles and the adhesive resin is 40 mass % or greater and 98 mass % or less.

Abstract: A method for manufacturing a semiconductor device includes forming a thermal oxide film on one surface of an SiC substrate by thermal oxidation at a temperature of 1150° C. or above in a gas atmosphere including nitrogen and oxygen, and introducing highly-concentrated nitrogen to one surface of the SiC substrate while forming the thermal oxide film; forming a highly-concentrated n-type SiC layer on one surface of the SiC substrate such that the thermal oxide film is removed from one surface of the SiC substrate by etching and, thereafter, one surface of the SiC substrate is exposed to radicals so that Si—N bonded bodies and C—N bonded bodies on one surface of the SiC substrate are removed while leaving nitrogen introduced into a lattice of SiC out of highly-concentrated nitrogen introduced into one surface of the SiC substrate; and forming an ohmic electrode layer on one surface of the SiC substrate.

Abstract: The present invention relates to a polyimide precursor comprising a repeating unit represented by the following chemical formula (1): wherein A is a tetravalent group having at least one aliphatic six membered ring and no aromatic ring in the chemical structure, and B is a divalent group having at least one amide bond and an aromatic ring in the chemical structure; or A is an aliphatic tetravalent group and B is a divalent group having at least one chemical structure represented by the following chemical formula (2) in the chemical structure: and X1 and X2 are each independently hydrogen, a C1-6 alkyl group or a C3-9 alkylsilyl group.

Abstract: A polyimide precursor comprising a repeating unit represented by the following chemical formula (1): in which A is a divalent group of an aromatic diamine or an aliphatic diamine, from which amino groups have been removed; and X1 and X2 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or an alkylsilyl group having 3 to 9 carbon atoms, wherein the polyimide precursor comprises at least one type of repeating unit represented by the chemical formula (1) in which A is a group represented by chemical formula (2) or (3): in which m independently represents 0 to 3 and n independently represents 0 to 3; Y1, Y2 and Y3 each independently represent at least one selected from the group consisting of hydrogen atom, methyl group and trifluoromethyl group; and Q and R each independently represent direct bond, or at least one of —NHCO—, —CONH—, —COO— and —OCO—, in which Z and W each independently represent a divalent aromatic group having 6 to 18 carbon atoms; and Y4 repre