Abstract: An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 ?m or more.

Abstract: A photosensor includes: a support; a thermoelectric conversion material section that is disposed on a first main surface of the support and that includes a plurality of first material layers each having an elongated shape, a plurality of second material layers each having electrical conductivity and an elongated shape, and an insulating film, the first material layers and the second material layers each being configured to convert thermal energy into electrical energy; a heat sink that is disposed on a second main surface of the support and along an outer edge of the support; a light-absorbing film that is disposed in a region surrounded by inner edges of the heat sink as viewed in a thickness direction of the support so as to form temperature differences on the first main surface of the support in longitudinal directions of the first material layers.

Abstract: A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

Abstract: A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of C6 ions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of C3 ions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiC4 ions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Si2 ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface.

Abstract: A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution ?d/d of 0.0055 or more.

Abstract: A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution ?d/d of 0.0055 or more.

Abstract: A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution ?d/d of 0.0055 or more.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.