Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.

Abstract: A thermoelectric material includes a plurality of first semiconductor members having first band gap energy and a second semiconductor member having second band gap energy higher than the first band gap energy. The first semiconductor member and the second semiconductor member are alternately arranged in a direction of carrier transport. The first semiconductor member has a width in the direction of carrier transport not greater than 5 nm and a distance between two adjacent first semiconductor members in the direction of carrier transport is not greater than 3 nm.

Abstract: A semiconductor layered body includes: a plurality of protrusions having first main surfaces along a reference plane and protruding from the reference plane; and a first semiconductor layer disposed at a side of the plurality of protrusions opposite to the first main surfaces so as to connect the plurality of protrusions to one another. Each of the protrusions is composed of a group III nitride that has a dislocation density of less than or equal to 1×108 cm?3, that is expressed by a composition formula of AlxGa1-xN, and that satisfies 0?x<1. The first semiconductor layer is composed of a group III nitride that has a dislocation density of less than or equal to 1×109 cm?3, that is expressed by a composition formula of AlyGa1-yN, and that satisfies 0<y?1.

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

Abstract: A wiper is made up of an attachment member to be attached to a machine tool, a wiper body formed integrally with the attachment member, a bent-shaped lip support part made of an elastic material and disposed at a lower end of the wiper body, and a lip part connected to the wiper body with the lip support part interposed therebetween. A lip front end portion of the lip part, a tip of which comes into contact with a sliding surface of the machine tool, is made of an elastic material containing an additive material for reinforcement.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 ?m that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.

Abstract: Monoclonal antibodies against human and mouse tissue factor, and fragments thereof, are disclosed, as well as pharmaceutical compositions and compositions for drug delivery containing the same. Therapeutic methods using the same are also disclosed.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: A layered body includes: a plate-like supporting body having a supporting main surface; and a plurality of projection portions disposed on the supporting main surface, each of the plurality of projection portions being composed of a group III nitride and having a dislocation density of not more than 1×108 cm?3. The projection portion preferably has a polygonal planar shape. The projection portion preferably has a plate-like shape. Preferably, each of the plurality of projection portions has a main surface opposite to the supporting body and corresponding to a {0001} plane of the group III nitride of the projection portions, and the adjacent projection portions of the plurality of projection portions have end surfaces facing each other and corresponding to a {11-20} plane of the group III nitride of the projection portions.

Abstract: Monoclonal antibodies against human and mouse tissue factor, and fragments thereof, are disclosed, as well as pharmaceutical compositions and compositions for drug delivery containing the same. Therapeutic methods using the same are also disclosed.

Abstract: A wiper is made up of an attachment member to be attached to a machine tool, a wiper body formed integrally with the attachment member, a bent-shaped lip support part made of an elastic material and disposed at a lower end of the wiper body, and a lip part connected to the wiper body with the lip support part interposed therebetween. A lip front end portion of the lip part, a tip of which comes into contact with a sliding surface of the machine tool, is made of an elastic material containing an additive material for reinforcement.

Abstract: A thermoelectric material includes a plurality of first semiconductor members having first band gap energy and a second semiconductor member having second band gap energy higher than the first band gap energy. The first semiconductor member and the second semiconductor member are alternately arranged in a direction of carrier transport. The first semiconductor member has a width in the direction of carrier transport not greater than 5 nm and a distance between two adjacent first semiconductor members in the direction of carrier transport is not greater than 3 nm.

Abstract: A method of producing nanoparticles in a base material made of a semiconductor material including a base material element, each nanoparticle including the base material element and a heterogeneous element different from the base material element includes: a layering step of alternately layering a first layer and a second layer, the first layer including the heterogeneous element, the second layer not including the heterogeneous element; and an annealing step of forming the nanoparticles in the base material by performing an annealing treatment onto a layered structure including the first layer and the second layer layered on each other. In the layering step, the base material element is included in at least one of the first layer and the second layer, and the second layer is formed to be thicker than the first layer.

Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 ?m that are bonded to each other. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film to a mean value mt of the thickness thereof is 0.01 or more and 0.5 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mo of the absolute value of the off angle is 0.005 or more and 0.6 or less.

Abstract: An airbag includes a tab that is inserted into and supported by a substantially flat-plate-shaped bracket disposed on a vehicle. The tab has a first slit extending along a direction substantially orthogonal to a direction of inflation and deployment of the airbag in plan view. The first slit allows insertion of the bracket in a normal time. The tab further has a second slit opening into a point at one end portion or on an intermediate portion of the first slit at an angle intersecting with the first slit in plan view.

Abstract: A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10?6K?1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.

Abstract: An airbag includes a tab that is inserted into and supported by a substantially flat-plate-shaped bracket disposed on a vehicle. The tab has a first slit extending along a direction substantially orthogonal to a direction of inflation and deployment of the airbag in plan view. The first slit allows insertion of the bracket in a normal time. The tab further has a second slit opening into a point at one end portion or on an intermediate portion of the first slit at an angle intersecting with the first slit in plan view.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.