Abstract: A gimbal system includes a gimbal configured to support an imaging assembly, one or more processors, and a storage device storing program instructions that, when being executed by the one or more processors, cause the one or more processors to, in response to an image re-shooting instruction, obtain a target angle of the gimbal based on a reference shooting trajectory, adjust an angle of the gimbal to the target angle to allow the imaging assembly to capture a current image frame, and adjust the angle of the gimbal to a desired angle based on the current image frame to allow the imaging assembly to perform image re-shooting.

Abstract: In some embodiments of the present disclosure, a sustained release osmotic-controlled pharmaceutical composition is provided, including: a core and a semi-permeable membrane coated on the core. The core includes a drug compartment, in which the drug compartment includes a first active ingredient, a first polymer and a first osmogen, and the first active ingredient includes lurasidone, a pharmaceutical acceptable salt of the lurasidone or a combination thereof. The semi-permeable membrane includes a membrane body and at least one pore distributed in the membrane body.

Abstract: A component for a vehicle interior may comprise a cover movable at a pivot joint relative to a base between a closed position and an open position through an intermediate position. The cover may comprise a composite hinge/pivot mechanism providing the pivot joint and configured so that the cover is movable from the closed position toward the intermediate position by a drive mechanism; the cover may be retained by a retaining mechanism and/or movable between the intermediate position and the open position by manual/hand action; the cover may be retained by a retaining mechanism and/or movable from the open position toward the closed position by manual/hand action. The drive mechanism may comprise a spring; the retaining mechanism may comprise a set of friction plates. The composite/hinge mechanism may comprise a clutch mechanism. The component may comprise a console providing a compartment and/or armrest.

Abstract: Techniques pertaining to efficient and flexible frequency domain (FD) aggregated physical-layer protocol data unit (FD-A-PPDU) with the same and/or mixed WiFi generations transmission are described. An apparatus (e.g., a station (STA)) performs a wireless communication by: (i) transmitting a FD-A-PPDU or (ii) receiving the FD-A-PPDU. The wireless communication is performed in a 160 MHz, 240 MHz, 320 MHz, 480 MHz or 640 MHz bandwidth with 80 MHz being a minimum size of each of multiple PPDUs of the FD-A-PPDU. The FD-A-PPDU may be a 160 MHz, 240 MHz, 320 MHz, 480 MHz or 640 MHz FD-A-PPDU. The FD-A-PPDU may include PPDUs having a same PPDU format or different PPDU formats of different WiFi generations and utilizing a minimum size of 80 MHz non-overlapping frequency subblocks as a base building block.

Abstract: An identity certificate may be issued to a blockchain node. The issuance may include issuing a first identity certificate to a first terminal and receiving a second identity certificate issuance request that is from the first terminal. A second identity certificate may be issued to the first terminal, and a third identity certificate issuance request is received from the second terminal. A third identity certificate is issued to the second terminal, so that the second terminal forwards the third identity certificate to the third terminal.

Abstract: An operation method of a network device and a control chip of the network device are provided. The network device receives an input signal through a fiber medium. The operation method includes the following steps: setting a target speed of the network device to a first speed; transmitting and/or receiving a data at the first speed; and setting the target speed of the network device to a second speed which is different from the first speed when the amplitude or energy of the input signal is not greater than a threshold.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A virtual view drawing method, a rendering method and apparatus, and a decoding method are provided. A first visibility map and a first texture map of a target view are generated. Region segmentation is performed on the first texture map to obtain a region segmentation result. A parameter representing segmentation performance is determined according to the region segmentation result. Region re-segmentation is performed on the first texture map when the parameter representing segmentation performance does not satisfy a first condition, to obtain a final region segmentation of the first texture map. Pixels to-be-updated in a region in the first visibility map are updated according to the final region segmentation result of the first texture map, to obtain a second visibility map. The second visibility map is shaded to obtain a second texture map of the target view.

Abstract: The present disclosure provides a method and a device for preparing a modified poly (m-phenylene isophthalamide) (PMIA) fiber by continuous polymerization-dry-wet spinning. The method includes the following steps: (1) preparing a mixed solution of m-phenylenediamine (MPD) and a copolymerized diamine monomer in N,N-dimethylacetamide (DMAC) serving as a solvent using a cosolvent; (2) mixing isophthaloyl chloride (IPC) with the mixed solution of the MPD and the copolymerized diamine monomer in the DMAC, and conducting pre-polycondensation and polycondensation in sequence to obtain a modified PMIA resin solution; and (3) subjecting the modified PMIA resin solution to additive addition, filtration, defoaming, and dry-wet spinning to obtain the modified PMIA fiber.

Abstract: A hybrid driving system and a hybrid electric vehicle. The hybrid driving system includes an engine, an input element (20), an output element (23), a box body (24), a first motor (13), a second motor (14), a first planet row, a second planet row, a third planet row, a first clutch (15) and a first brake (16). According to the hybrid driving system of the present disclosure, a basic three-planet-row planet gear configuration is provided through the planet row mechanical structure and the reasonable layout of multiple operating elements (the clutches and the brakes), which can realize at least two E-CVT working modes to obtain higher transmission efficiency.

Abstract: The present application discloses a method of forming a hydrogel-coated substrate, wherein the hydrogel has antifouling and antimicrobial properties. The method comprises applying an aqueous pre-hydrogel solution to a substrate, polymerizing the aqueous pre-hydrogel solution, thereby forming a coated substrate having a conformal hydrogel coating and a non-conformal hydrogel coating, contacting the coated substrate with a swelling agent, and removing the non-conformal hydrogel coating from the coated substrate, thereby leaving the conformal hydrogel coating on the substrate to form the hydrogel-coated substrate. The aqueous pre-hydrogel solution comprises a monomer with antimicrobial activity, a monomer with antifouling activity, and either a polymer, oligomer, or macromer which, when polymerized together, form a hydrogel. Also disclosed is a coated substrate and a hydrogel coating.

Abstract: A reconfigurable crystal oscillator and a method for reconfiguring a crystal oscillator are provided. The reconfigurable crystal oscillator includes a transconductance circuit, a feedback resistor, a crystal tank, an input-end capacitor and an output-end capacitor. Both of the feedback resistor and the crystal tank are coupled between an input terminal and an output terminal of the transconductance circuit. The input-end capacitor is coupled to the input terminal of the transconductance circuit, and the output-end capacitor is coupled to the output terminal of the transconductance circuit. In particular, the transconductance circuit is configured to provide a transconductance, and when an operation mode of the reconfigurable crystal oscillator is switched, an input-end capacitance of the input-end capacitor and an output-end capacitance of the output-end capacitor are switched, respectively.

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.

Abstract: A crystal oscillator and a phase noise reduction method thereof are provided. The crystal oscillator may include a crystal oscillator core circuit, a first bias circuit and a phase noise reduction circuit, the first bias circuit is coupled to an output terminal of the crystal oscillator core circuit, and the phase noise reduction circuit is coupled to the output terminal of the crystal oscillator core circuit. In operations of the crystal oscillator, the crystal oscillator core circuit is configured to generate a sinusoidal wave. The first bias circuit is configured to provide a first voltage level to be a bias voltage of the sinusoidal wave. The phase noise reduction circuit is configured to reset the bias voltage of the sinusoidal wave in response to a voltage level of the sinusoidal wave exceeding a specific voltage range. For example, the specific voltage range is determined according to a second voltage level.

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

Abstract: A structure of semiconductor device is provided, including a substrate. First and second trench isolations are disposed in the substrate. A height of a portion of the substrate is between a top and a bottom of the first and second trench isolations. A gate insulation layer is disposed on the portion of the substrate between the first and second trench isolations. A first germanium (Ge) doped layer region is disposed in the portion of the substrate just under the gate insulation layer. A second Ge doped layer region is in the portion of the substrate, overlapping with the first Ge doped layer region to form a Ge gradient from high to low along a depth direction under the gate insulation layer. A fluorine (F) doped layer region is in the portion of the substrate, lower than and overlapping with the first germanium doped layer region.

Abstract: This invention provides a light-concentrating structure with photosensitivity enhancing effect, including the substrate, buried layer, first electrode layer, second electrode layer, dielectric layer and interconnection structure. The substrate is equipped with a housing space; the buried layer is arranged above the substrate with the housing space; the first electrode layer is arranged above the buried layer; the second electrode layer is arranged in the middle of the first electrode layer; the dielectric layer is arranged above the second electrode layer; the interconnection structure is arranged above the substrate and the first electrode layer surrounding the dielectric layer, which forms an opening and a light-concentrating recess groove.

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.

Abstract: A method for fabricating of semiconductor device is provided, including providing a substrate. A first trench isolation and a second trench isolation are formed in the substrate. A portion of the substrate is etched to have a height between a top and a bottom of the first and second trench isolations. A germanium (Ge) doped layer region is formed in the portion of the substrate. A fluorine (F) doped layer region is formed in the portion of the substrate, lower than and overlapping with the germanium doped layer region. An oxidation process is performed on the portion of the substrate to form a gate oxide layer between the first and second trench isolations.

Abstract: This invention provides a light-concentrating structure with photosensitivity enhancing effect, including the substrate, buried layer, first electrode layer, second electrode layer, dielectric layer and interconnection structure. The substrate is equipped with a housing space; the buried layer is arranged above the substrate with the housing space; the first electrode layer is arranged above the buried layer; the second electrode layer is arranged in the middle of the first electrode layer; the dielectric layer is arranged above the second electrode layer; the interconnection structure is arranged above the substrate and the first electrode layer surrounding the dielectric layer, which forms an opening and a light-concentrating recess groove.