Abstract: A manufacturing method of a semiconductor structure includes the following steps. A patterned mask layer is formed on a semiconductor substrate. An isolation trench is formed in the semiconductor substrate by removing a part of the semiconductor substrate. A liner layer is conformally formed on an inner sidewall of the isolation trench. An implantation process is performed to the liner layer. The implantation process includes a noble gas implantation process. An isolation structure is at least partially formed in the isolation trench after the implantation process. An etching process is performed to remove the patterned mask layer after forming the isolation structure and expose a top surface of the semiconductor substrate. A part of the liner layer formed on the inner sidewall of the isolation trench is removed by the etching process. The implantation process is configured to modify the etch rate of the liner layer in the etching process.

Abstract: A mobile rustproofing washing system includes a receptacle, a control module, a water supply module, a filtration module and a washing module. The receptacle is removably disposed on a mobile carrier. The control module is disposed in the receptacle. The water supply module is disposed in the receptacle and includes a front water tank and a rear water tank. The filtration module is connected to the front water tank and the rear water tank. The filtration module receives and filters water from the front water tank. The filtered water is stored in the rear water tank. The washing module connects with the rear water tank and receives water therefrom, so as to carry out a washing process. Therefore, the mobile rustproofing washing system is quick to mount/demount and easy to use, thereby having high mobility.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises a substrate, a gate structure disposed on the substrate, a spacer disposed on the substrate and covering a sidewall of the gate structure, an air gap sandwiched between the spacer and the substrate, and a source/drain region disposed in the substrate and having a faceted surface exposed from the substrate, wherein the faceted surface borders the substrate on a boundary between the air gap and the substrate.

Abstract: The present application discloses a fluid cleaning apparatus which includes a driving assembly including a motor, a gear clutching assembly, a moving assembly, a swaying spray assembly, a sensing assembly, and a controlling module. The fluid cleaning apparatus integrates functions of movement actuation and spraying angle adjustment with the motor and achieves versatile spraying angles for spray-cleaning with apparatus configuration convertible between swaying motion and ceased swaying motion and/or between moving motion and ceased moving motion. Besides, self-propelled movement, spraying pressure modulation, and spraying angle adjustment can be controlled by the control module or manually remotely controlled by a user. Since the fluid cleaning apparatus of the present application saves the conventional installation cost and space needed, as well as resources consumed, for cleaning the bottom of an object to be cleaned, the fluid cleaning apparatus can be extensively applied to multiple fields.

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

Abstract: A method for fabricating a semiconductor device. A gate is formed on a substrate. A spacer is formed on each sidewall of the gate. A hard mask layer is formed on the spacer. A recessed region is formed in the substrate and adjacent to the hard mask layer. An epitaxial layer is formed in the recessed region. The substrate is subjected to an ion implantation process to bombard particle defects on the hard mask layer with inert gas ions. An annealing process is performed to repair damages to the epitaxial layer caused by the ion implantation process. The hard mask layer is then removed.

Abstract: A method for fabricating a semiconductor device. A gate is formed on a substrate. A spacer is formed on each sidewall of the gate. A hard mask layer is formed on the spacer. A recessed region is formed in the substrate and adjacent to the hard mask layer. An epitaxial layer is formed in the recessed region. The substrate is subjected to an ion implantation process to bombard particle defects on the hard mask layer with inert gas ions. An annealing process is performed to repair damages to the epitaxial layer caused by the ion implantation process. The hard mask layer is then removed.

Abstract: A semiconductor structure includes a substrate, fin-shaped structures disposed on the substrate, an isolation layer disposed between the fin-shaped structures, and a doped region disposed in an upper portion of the isolation layer, where the doped region is doped with helium or neon.

Abstract: A mobile rustproofing washing system includes a receptacle, a control module, a water supply module, a filtration module and a washing module. The receptacle is removably disposed on a mobile carrier. The control module is disposed in the receptacle. The water supply module is disposed in the receptacle and includes a front water tank and a rear water tank. The filtration module is connected to the front water tank and the rear water tank. The filtration module receives and filters water from the front water tank. The filtered water is stored in the rear water tank. The washing module connects with the rear water tank and receives water therefrom, so as to carry out a washing process. Therefore, the mobile rustproofing washing system is quick to mount/demount and easy to use, thereby having high mobility.

Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.

Abstract: A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.

Abstract: A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.

Abstract: A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.

Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.

Abstract: A voltage-controlled oscillator gain measurement system includes a voltage-controlled oscillator, a voltage detector, and a processor. The voltage-controlled oscillator, which is configured in a phase-locked loop circuit, generates an output signal with an output frequency according to a control signal. The control signal is generated according to the output signal divided by a scaling number. The voltage detector is configured to measure a voltage difference of the control signal. The processor adjusts the scaling number to generate an output frequency difference of the output signal, and obtains a reciprocal gain of the voltage-controlled oscillator by dividing the voltage difference by the output frequency difference.

Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.

Abstract: A detection circuit for an AC-to-AC power converter includes a voltage divider circuit that has three AC input terminal coupled respectively to three input ends of a power converter which are to receive respectively three AC input power signals with different phases, and that receives a predetermined first reference voltage. Upon receiving one AC input power signal, the voltage divider circuit outputs a divided voltage, which during an active period of the one AC input power signal, is greater than a predetermined second reference voltage, to a comparator, which also receives the predetermined second reference voltage, such that the comparator outputs a detection signal that is in an active state when the one AC input power signal is.

Abstract: A device and method selects an antenna configuration. The method performed at a user equipment includes determining at least one communication functionality that is being used, each communication functionality configured to utilize at least one antenna in a multi-antenna arrangement of the user equipment. The method includes receiving a first indication of whether a cellular communication functionality is being used, the cellular communication functionality configured to utilize at least one antenna in the multi-antenna arrangement. The method includes receiving a second indication of whether a coexistence condition is present. The method includes determining an antenna configuration for the multi-antenna arrangement to be used by the determined communication functionality based upon the determined communication functionality, the first indication, and the second indication.

Abstract: A motor driving circuit and a method for detecting output phase loss are disclosed, which detect and integrate a three-phase direct current to generate a current integration, and to determine whether a motor configured in the motor driving circuit operates in a phase loss condition according to the current value of the current integration. When the current value of the current integration is a constant value, the motor driving circuit determines that the motor operates in a normal condition, and drives the motor continuously. When the current value of the current integration is a low current value (e.g., 0 A), the motor driving circuit determines that the motor operates in a phase loss condition, and stops driving the motor. Therefore, when the motor driving circuit and the method generate the higher current because of operating in the phase loss condition, it can avoid burning out the motor driving circuit.

Abstract: A device and method selects an antenna configuration. The method performed at a user equipment includes determining at least one communication functionality that is being used, each communication functionality configured to utilize at least one antenna in a multi-antenna arrangement of the user equipment. The method includes receiving a first indication of whether a cellular communication functionality is being used, the cellular communication functionality configured to utilize at least one antenna in the multi-antenna arrangement. The method includes receiving a second indication of whether a coexistence condition is present. The method includes determining an antenna configuration for the multi-antenna arrangement to be used by the determined communication functionality based upon the determined communication functionality, the first indication, and the second indication.