Abstract: Disclosed herein are a method, apparatus, and storage medium for image encoding/decoding. Selective compression learning of latent representations for variable-rate image compression is used for the method, apparatus, and storage medium. A selective compression method that partially encodes latent representations in a completely generalized manner for deep-learning-based variable-rate image compression is disclosed in embodiments. The methods of the embodiments adaptively determine essential representation elements for compression at different target quality levels.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: Disclosed herein are a method, an apparatus and a storage medium for encoding/decoding using a transform-based feature map. An optimal basis vector is extracted from one or more feature maps, and a transform coefficient is acquired through a transform using the basis vector. The basis vector and the transform coefficient may be transmitted through a bitstream. In an embodiment, one or more feature maps are reconstructed using the basis vector and the transform coefficient, which are decoded from the bitstream.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a “0” bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.

Abstract: A storage device, a non-volatile memory device, and a method of operating the non-volatile memory device are provided. The storage device includes a storage controller configured to send a command and program data including a pattern of one or more bits, a non-volatile memory device configured to receive the command and the program data, and a pattern monitoring circuit configured to monitor a pattern of the program data sent from the storage controller. The pattern monitoring circuit is configured to send an abnormal status check bit to the storage controller when the program data includes repeated patterns that are repeated a preset number of times or more, and the storage controller is configured to resend the program data to the non-volatile memory device in response to receiving the abnormal status check bit.

Abstract: A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.

Abstract: A storage controller and a storage system comprising the same are provided. Provided is a device security manager configured to set a first device security zone to allow a first tenant to access first tenant data stored in a non-volatile memory, receive access information from a host device and writing the received access information in a mapping table, wherein the access information includes a first host memory address in which the first tenant data is stored in the host device, a first namespace identifier for identifying the first tenant data stored in the non-volatile memory, a first logic block address corresponding to the first namespace identifier, and an encryption key, encrypt the first tenant data by using the encryption key, and write the encrypted first tenant data in the first device security zone of the non-volatile memory.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A tantalum capacitor includes: first and second surfaces facing in a first direction, third and fourth surfaces facing in a second direction, and fifth and sixth surfaces facing in a third direction; a tantalum body having one surface through which a tantalum wire is exposed in the first direction; and a substrate on which the tantalum body is mounted, wherein the substrate may be an organic-inorganic composite substrate.

Abstract: A tantalum capacitor includes a sintered tantalum body including tantalum powder, a conductive polymer layer disposed on the sintered tantalum body and including a first filler, a carbon layer disposed on the conductive polymer layer; and a tantalum body including a tantalum wire penetrating through at least a portion of each of the sintered tantalum body and the conductive polymer layer in a first direction. A ratio of an area of the first filler to an area of the conductive polymer layer is greater than 0.38 in a first cross-section partially overlapping the sintered tantalum body, among cross-sections perpendicular to the first direction.

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

Abstract: A tantalum capacitor includes a capacitor body comprising a tantalum body having a tantalum wire and a molded portion; an anodic terminal connected to the tantalum wire and disposed on the first surface of the capacitor body; an anodic connection portion connected to the anodic terminal and disposed on the fifth surface of the capacitor body; a cathodic terminal connected to the tantalum body and disposed on the second surface of the capacitor body; a cathodic connection portion connected to the cathodic terminal and spaced apart from the anodic connection portion on the fifth surface of the capacitor body; and a substrate disposed on the sixth surface of the body and on which the tantalum body is mounted, wherein the anodic terminal and the cathodic terminal are electrically isolated on the substrate.

Abstract: A solid electrolyte capacitor includes a sintered body formed by sintering a molded body containing metal powder; and a conductive polymer layer disposed above the sintered body. A ratio (t2/t1) of a thickness (t2) of the conductive polymer layer in an edge portion of the sintered body to a thickness (t1) of the conductive polymer layer in a central portion of the sintered body satisfies 0.35?t2/t1?0.9.

Abstract: A smart controller with a sensor, according to one embodiment of the present inventive concept, communicates wirelessly with a mobile terminal and has a sensor for providing, to the mobile terminal, biometric information of a user or external environmental information, the smart controller comprising: a body; an input button unit which is arranged on the upper surface or a side surface of the body and which generates a control signal for the mobile terminal by means of operation by the user; a sensor for detecting biometric information of the user or external environmental information; and a control unit which is arranged inside the body and which receives an input of a detection value of the sensor and delivers same to the mobile terminal.

Abstract: A tantalum capacitor includes a capacitor body comprising a tantalum body having a tantalum wire and a molded portion; an anodic terminal connected to the tantalum wire and disposed on the first surface of the capacitor body; an anodic connection portion connected to the anodic terminal and disposed on the fifth surface of the capacitor body; a cathodic terminal connected to the tantalum body and disposed on the second surface of the capacitor body; a cathodic connection portion connected to the cathodic terminal and spaced apart from the anodic connection portion on the fifth surface of the capacitor body; and a substrate disposed on the sixth surface of the body and on which the tantalum body is mounted, wherein the anodic terminal and the cathodic terminal are electrically isolated on the substrate.

Abstract: Provided a semiconductor device comprises, a plurality of semiconductor patterns spaced in a first direction; a plurality of mold insulating layers between the plurality of semiconductor patterns, a plurality of silicide patterns contacting the plurality of semiconductor patterns; and a plurality of first metal conductive films between the plurality of mold insulating layers and connected to each of the silicide patterns, wherein each of the silicide patterns includes a first sidewall that faces the semiconductor pattern, and a second sidewall which faces the first metal conductive film, the first sidewall of the silicide pattern and the second sidewall of the silicide pattern extends in the first direction, and the first sidewall of the silicide pattern and the second sidewall of the silicide pattern are curved surfaces.

Abstract: A tantalum capacitor includes: first and second surfaces facing in a first direction, third and fourth surfaces facing in a second direction, and fifth and sixth surfaces facing in a third direction; a tantalum body having one surface through which a tantalum wire is exposed in the first direction; and a substrate on which the tantalum body is mounted, wherein the substrate may be an organic-inorganic composite substrate.

Abstract: The signal input device according to an embodiment of the present inventive concept may have effects in that the number of buttons included in the signal input device can be reduced because different types of input signals can be generated depending on a direction of a laterally pushed manipulation force, and a configuration can be simplified, a production cost can be significantly reduced and two or more input signals can be simultaneously generated because a laterally pushed manipulation force can be detected although a separate pressure sensor is not provided.

Abstract: The present disclosure relates to a solid electrolytic capacitor, including a body comprising a tantalum wire disposed on one end thereof; a substrate, on which the body is disposed, comprising an insulating layer, first and second wiring layers respectively disposed on a first surface and a second surface, facing each other, of the insulating layer, and a via electrode penetrating the insulating layer to connect the first and second wiring layers to each other; and a connection portion connecting the tantalum wire to the first wiring layer.