Patents by Inventor Young-gu Jin

Young-gu Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • UNIT PIXEL AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME
    Publication number: 20130119234
    Abstract: A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.
    Type: Application
    Filed: September 13, 2012
    Publication date: May 16, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-Jei LEE, Young-Gu JIN, Tae-Yon LEE, Yoon-Dong PARK, Eric R. FOSSUM
  • Image sensor including noise removing unit, image pickup device having the image sensor, and image sensing method performed in the image sensor
    Patent number: 8373782
    Abstract: An image sensor including a noise removing unit may sense images accurately by measuring the amount of noise generated when the image sensor does not perform a sensing operation, storing information about the measured noise amount in each pixel, and removing photocharge corresponding to the information about the measured noise amount during image sensing.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eric Fossum, Kyoung Lae Cho, Yoon Dong Park, Young Gu Jin, Seung Hoon Lee, Sung-Jae Byun
  • Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device
    Patent number: 8354286
    Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: January 15, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-kyung Lee, Byoung-lyong Choi, Pil-soo Ahn, Jun-young Kim, Young-gu Jin
  • Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    Patent number: 8294880
    Abstract: Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: October 23, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Dae-kil Cha, Seung-hoon Lee, Yoon-dong Park
  • Non-volatile memory devices having data storage layer
    Patent number: 8283711
    Abstract: Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: October 9, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Yoon-dong Park, Won-joo Kim, Seung-hoon Lee, Suk-pil Kim
  • DEPTH SENSORS, DEPTH INFORMATION ERROR COMPENSATION METHODS THEREOF, AND SIGNAL PROCESSING SYSTEMS HAVING THE DEPTH SENSORS
    Publication number: 20120242975
    Abstract: According to at least one example embodiment, a depth information error compensation method includes outputting modulated light to a target object, detecting a plurality of first pixel signals at different detection time points in a first time interval, the first pixel signals representing light reflected from the target object during the first time interval, detecting a plurality of second pixel signals at different detection time points in a second time interval, the second pixel signals representing light reflected from the target object during the second time interval, comparing each of the plurality of first pixel signals with each of the plurality of second pixel signals and calculating depth information to the target object according to the comparing.
    Type: Application
    Filed: March 22, 2012
    Publication date: September 27, 2012
    Inventors: Dong Ki Min, Young Gu Jin
  • Light emitting device using nano size needle
    Patent number: 8217401
    Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: July 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Noe-jung Park, Sung-hoon Lee, Hyo-sug Lee, Young-Gu Jin
  • Method of manufacturing silicon optoelectronic device,silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device
    Publication number: 20120161159
    Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.
    Type: Application
    Filed: January 16, 2004
    Publication date: June 28, 2012
    Applicant: Samsung Electronics Co, Ltd.
    Inventors: Eun-Kyung Lee, Byoung-lyong Choi, Pil-soo Ahn, Jun-young Kim, Young-gu Jin
  • Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same
    Patent number: 8193497
    Abstract: Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: June 5, 2012
    Assignees: Samsung Electronics Co., Ltd., The Board of Trustees of the Leland Stanford Junior University
    Inventors: Yoon-dong Park, David Andrew Barclay Miller, Young-gu Jin, In-sung Joe
  • Depth Sensor, Method Of Reducing Noise In The Same, And Signal Processing System Including The Same
    Publication number: 20120134598
    Abstract: The method includes calculating similarities between a plurality of pixel signals of a depth pixel and a plurality of pixel signals of neighbor depth pixels neighboring the depth pixel, calculating a weight of each of the neighbor depth pixels using the similarities, calculating a weight of the depth pixel using the weights of the respective neighbor depth pixels, and determining a denoised pixel signal using the weights of the respective neighbor depth pixels and the weight of the depth pixel.
    Type: Application
    Filed: November 16, 2011
    Publication date: May 31, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ilia Ovsiannikov, Dong Ki Min, Young Gu Jin
  • IMAGE SENSOR FOR SIMULTANEOUSLY OBTAINING COLOR IMAGE AND DEPTH IMAGE, METHOD OF OPERATING THE IMAGE SENSOR, AND IMAGE PROCESSING SYTEM INCLUDING THE IMAGE SENSOR
    Publication number: 20120133737
    Abstract: An image sensor includes a light source that emits modulated light such as visible light, white light, or white light-emitting diode (LED) light to a target object, a plurality of pixels, and an image processing unit. The pixels include at least one pixel for outputting pixel signals according to light reflected by the target object. The image processing unit simultaneously generates a color image and a depth image from the pixel signals of the at least one pixel.
    Type: Application
    Filed: September 20, 2011
    Publication date: May 31, 2012
    Inventors: Dong-ki Min, Young-gu Jin
  • Sub-pixels, unit pixels, image sensors and methods of operating the same
    Patent number: 8154640
    Abstract: An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-kil Cha, Bok-ki Min, Young-gu Jin, Won-joo Kim, Seung-hoon Lee, Yoon-dong Park
  • Photodiodes, image sensing devices and image sensors
    Patent number: 8148762
    Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: April 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Sung Joe, Yoon-dong Park, Young-gu Jin, Seung-hyuk Chang
  • Image sensor having nanodot
    Patent number: 8143685
    Abstract: An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.
    Type: Grant
    Filed: July 23, 2009
    Date of Patent: March 27, 2012
    Assignee: Samsung Electronics CP., Ltd.
    Inventors: Dae-kil Cha, Young-gu Jin, Bok-ki Min, Yoon-dong Park
  • Optical amplifying medium, method of manufacturing the optical amplifying medium, and optical device comprising the optical amplifying medium
    Patent number: 8130442
    Abstract: An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.
    Type: Grant
    Filed: September 8, 2008
    Date of Patent: March 6, 2012
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Dae-kil Cha, Jung-hoon Shin, Yoon-dong Park, Young-gu Jin, Moon-seung Yang, In-sung Joe, Jee-soo Chang
  • Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    Patent number: 8119480
    Abstract: A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Hoon Lee, Sungil Park, Young-Gu Jin, Jongseob Kim, Ki-Ha Hong
  • Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    Publication number: 20120012899
    Abstract: Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
    Type: Application
    Filed: September 21, 2011
    Publication date: January 19, 2012
    Inventors: Young-gu Jin, Dae-Kil Cha, Seung-hoon Lee, Yoon-dong Park
  • Antifuse structures, antifuse array structures, methods of manufacturing the same
    Patent number: 8058701
    Abstract: Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: November 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Deok-kee Kim, Yoon-dong Park, Seung-hoon Lee, I-hun Song, Won-joo Kim, Young-gu Jin, Hyuk-soon Choi, Suk-pil Kim
  • Capacitorless DRAM and methods of manufacturing and operating the same
    Patent number: 8053822
    Abstract: Example embodiments provide a capacitorless dynamic random access memory (DRAM), and methods of manufacturing and operating the same. The capacitorless DRAM according to example embodiments may include a semiconductor layer separated from a top surface of a substrate and that contains a source region, a drain region, and a channel region, a charge reserving layer formed on the channel region, and a gate formed on the substrate to contact the channel region and the charge reserving layer.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: November 8, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Suk-pil Kim, Young-gu Jin, Yoon-dong Park
  • Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
    Patent number: 8035806
    Abstract: Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: October 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Dae-kil Cha, Seung-hoon Lee, Yoon-dong Park