Patents by Inventor Young-gu Jin

Young-gu Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory device and method of operating and fabricating the same
    Patent number: 8004906
    Abstract: Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: August 23, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, Sung-hoon Lee, Jae-woong Hyun, Jai-kwang Shin, Young-gu Jin, Sung-il Park, Jong-seob Kim
  • Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same
    Publication number: 20110198499
    Abstract: Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.
    Type: Application
    Filed: February 12, 2010
    Publication date: August 18, 2011
    Inventors: Yoon-dong Park, David Andrew Barclay Miller, Young-gu Jin, In-sung Joe
  • SENSOR AND METHOD USING THE SAME
    Publication number: 20110199602
    Abstract: A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.
    Type: Application
    Filed: February 17, 2011
    Publication date: August 18, 2011
    Inventors: Suk Pil KIM, Yoon Dong Park, Dong Seok Suh, Young Gu Jin, Seung Hoon Lee
  • DEPTH SENSOR, DEPTH ESTIMATION METHOD USING THE SAME, AND DEPTH ESTIMATION DEVICE INCLUDING THE SAME
    Publication number: 20110202310
    Abstract: A depth estimation apparatus and method are provided. The depth estimation method includes grouping a plurality of frame signals generated by a depth pixel into a plurality of frame signal groups which are used to estimate a depth to an object without a depth estimation error caused by an omission of a frame signal, the grouping of the a plurality of frame signals based on whether an omitted frame signal exists in the plurality of frame signals and based on a continuous pattern of the plurality of frame signals; and estimating the depth to the object using each of the plurality of frame signal groups.
    Type: Application
    Filed: February 11, 2011
    Publication date: August 18, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Ki MIN, Young Gu JIN
  • Methods of operating memory devices
    Patent number: 7995396
    Abstract: Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.
    Type: Grant
    Filed: July 8, 2009
    Date of Patent: August 9, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-soo Seol, Sung-II Park, Yoon-dong Park, Young-gu Jin, In-sung Joe
  • SENSOR, METHOD OF OPERATING THE SAME, AND SYSTEM INCLUDING THE SAME
    Publication number: 20110188026
    Abstract: A method includes providing packets to demodulate a modulated photon signal output from a light source, wherein each packet includes a first interval and a second interval, and providing oscillation signals respectively having different phases from one another to photogates during the first interval of each of the packets. The light source is disabled and a direct current (DC) voltage is provided to the photogates during the second interval of each of the packets.
    Type: Application
    Filed: November 9, 2010
    Publication date: August 4, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Yon LEE, Young Gu JIN, Dong Ki MIN, Dong Seok SUH, Jae Pil KIM
  • Capacitorless DRAM having a hole reserving unit
    Patent number: 7977707
    Abstract: Provided are a capacitorless DRAM and methods of manufacturing the same. The capacitorless DRAM may include a substrate including a source, a drain and a channel, a gate on the channel of the substrate, and a hole reserving unit below the channel.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: July 12, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, Jae-woong Hyun, Young-gu Jin, Jai-kwang Shin
  • IMAGE SENSORS FOR SENSING OBJECT DISTANCE INFORMATION
    Publication number: 20110129123
    Abstract: An image sensor includes a clock signal generator configured to generate and output at least first and second clock signals, a plurality of pixels configured to generate associated distance signals based on corresponding clock signals from among the at least first and second clock signals and light reflected by an object, and a distance information deciding unit configured to determine distance information with respect to the object by using the associated distance signals. At least one first pixel from among the plurality of pixels is configured to generate the associated distance signal based on at least the first clock signal, and at least one second pixel from among the plurality of pixels, which is adjacent to the at least one first pixel, is configured to generate the associated distance signal based on at least the second clock signal.
    Type: Application
    Filed: November 26, 2010
    Publication date: June 2, 2011
    Inventors: Ilia Ovsiannikov, Yoon-dong Park, Dong-ki Min, Young-gu Jin
  • IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110128423
    Abstract: An image sensor includes a plurality of color sensors, a plurality of depth sensors, a near-infrared cut filter, a color filter, a pass filter and a rejection filter. The color sensors and depth sensors are formed on a substrate. The near-infrared cut filter and the color filter are formed on the color sensors. The pass filter is formed on the depth sensors, and is adapted to transmit light having a wavelength longer than an upper limit of a visible light wavelength. The pass filter has a multi-layer structure wherein a semiconductor material and a semiconductor oxide material are alternately stacked. The rejection filter is formed over the near-infrared cut filter, the color filter and the pass filter, and is adapted to transmit light having a wavelength shorter than an upper limit of a near-infrared light wavelength.
    Type: Application
    Filed: November 11, 2010
    Publication date: June 2, 2011
    Inventors: Myung-Bok LEE, Sang-Chul Sul, Young-Gu Jin
  • Nonvolatile memory devices and methods of operating the same
    Patent number: 7948019
    Abstract: Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: May 24, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Ki-ha Hong, Yoon-dong Park, Jai-kwang Shin, Suk-pil Kim
  • Three-Dimensional Image Sensors and Methods of Manufacturing the Same
    Publication number: 20110102547
    Abstract: Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light.
    Type: Application
    Filed: October 15, 2010
    Publication date: May 5, 2011
    Inventors: Sang-Chul Sul, Won-Cheol Jung, Yoon-Dong Park, Myung-Bok Lee, Young-Gu Jin
  • Capacitorless DRAM and methods of operating the same
    Patent number: 7933143
    Abstract: A capacitorless DRAM and methods of manufacturing and operating the same are provided. The capacitorless DRAM includes a source, a drain and a channel layer, formed on a substrate. A charge reserving layer is formed on the channel layer. The capacitorless DRAM includes a gate that contacts the channel layer and the charge reserving layer.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: April 26, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Ki-ha Hong, Yoon-dong Park
  • Method for reducing lateral movement of charges and memory device thereof
    Patent number: 7929351
    Abstract: Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: April 19, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-soo Seol, Young-gu Jin, Yoon-dong Park
  • COLOR FILTER ARRAY, IMAGE SENSOR HAVING THE SAME, AND SIGNAL INTERPOLATING METHOD
    Publication number: 20110085063
    Abstract: A color filter array of an image sensor, the color filter array including a plurality of infrared ray (IR) filters, each of which filters out light to transmit wavelengths in an IR region; a plurality of first type color filters; a plurality of second type color filters; and a plurality of third type color filters, wherein some adjacent IR filters are arranged to form a T shape.
    Type: Application
    Filed: September 29, 2010
    Publication date: April 14, 2011
    Inventors: Dong Ki Min, Young Gu Jin
  • Nanowire light emitting device
    Patent number: 7919786
    Abstract: A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: April 5, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Sung-hoon Lee, Hyo-sug Lee, Byoung-lyong Choi, Jong-seob Kim
  • IMAGE SENSORS
    Publication number: 20110074989
    Abstract: Provided is an image sensor having a depth sensor. The image sensor includes a substrate including a visible light region and a non-visible light region, a first well and a second well having a first conductivity type and in the non-visible light perception region, and a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively.
    Type: Application
    Filed: September 21, 2010
    Publication date: March 31, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eric R. Fossum, Soo-Jung Hwang, Young-Gu Jin, Yoon-Dong Park, Dae-Kil Cha
  • DELAY COMPENSATION IN MODULATED OPTICAL TIME-OF-FLIGHT PHASE ESTIMATION
    Publication number: 20110051119
    Abstract: A distance measurement method includes measuring a plurality of integrated signals at a plurality of modulation phase offsets; estimating at least one integrated signal for at least one of the plurality of modulation phase offsets, respectively, to adjust its reception time relative to an integrated signal for another of the plurality of modulation phase offsets; and determining a distance between the target and receiver in accordance with the estimated at least one signal.
    Type: Application
    Filed: July 20, 2010
    Publication date: March 3, 2011
    Inventors: Dong Ki Min, Young Gu Jin
  • PHOTO DETECTING APPARATUS AND UNIT PIXEL THEREOF
    Publication number: 20110019049
    Abstract: A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate.
    Type: Application
    Filed: July 27, 2010
    Publication date: January 27, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Gu Jin, Kwan-Young Oh, Samuel Sungmok Lee, Kwang-Chol Choe, Se-Won Seo, Yoon-Dong Park, Eric Fossum, Kyoung-Lae Cho
  • Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    Publication number: 20110021014
    Abstract: A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.
    Type: Application
    Filed: September 29, 2010
    Publication date: January 27, 2011
    Inventors: Sung-Hoon Lee, Sungil Park, Young-Gu Jin, Jongseob Kim, Ki-Ha Hong
  • Optical sensor and semiconductor device
    Publication number: 20110013055
    Abstract: Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass.
    Type: Application
    Filed: July 2, 2010
    Publication date: January 20, 2011
    Inventors: Sang-Chul Sul, Myung-Bok Lee, Hoon-Sang Oh, Young-Gu Jin