Abstract: An encryption system and method that may encrypt all of the transmitted and received data packets on the data link layer without collisions on the Initialization Vector (IV). In the encryption system and method a new final key value may be generated and applied to every transmitted and received data packet. The encryption system and method provide for a novel three phase algorithmic process for generating a final secret key.

Abstract: Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Abstract: Disclosed herein is a composition for preventing or treating pruritic or irritant skin diseases which comprises, as a vanilloid receptor antagonist, a thiourea derivative, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solvate thereof, together with a pharmaceutically acceptable carrier.

Abstract: A lithography device including a first revolver, a second revolver and a driving device. The first revolver includes a transmittance control filter. The second revolver includes transmittance profile filter. The driving device is capable of rotating the second revolver. The first revolver is for positioning the at least one transmittance control filter in the light path. The second revolver is for positioning the at least one transmittance profile filters in the light path.

Abstract: The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

Abstract: Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Abstract: Disclosed is a semiconductor manufacturing apparatus having an air curtain located in a door entrance thereof. The air curtain is generated by an air curtain generator located in the door entrance of the apparatus. The air curtain typically flows into a discharge pipe located in the door entrance opposite the air curtain generator.

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

Abstract: In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.

Abstract: An apparatus and method to load a reticle, to check whether the reticle is loaded in a flat manner and to flatten the reticle when the reticle is not loaded in a flat manner. In one embodiment, the apparatus includes a sensor to sense the degree of flatness of the reticle, and reticle support units to support the reticle in a flat manner. The reticle support units include cylinders that are disposed under, for example, at least both sides of the reticle and may be independently moveable to vertically move the reticle according to the degree of flatness of the reticle sensed by the sensor.

Abstract: The present invention relates to thiourea compounds and the pharmaceutical compositions containing the same, and particularly, to novel thiourea compounds as an antagonist against vanilloid receptor (VR) and the pharmaceutical compositions thereof. As diseases associated with the activity of vanilloid receptor, pain, acute pain, chronic pain, neuropathic pain, post-operative pain, migraine, arthralgia, neuropathies, nerve injury, diabetic neuropathy, neurodegeneration, neurotic skin disorder, stroke, urinary bladder hypersensitiveness, irritable bowel syndrome, a respiratory disorder such as asthma or chronic obstructive pulmonary disease, irritation of skin, eye or mucous membrane, fervescence, stomach-duodenal ulcer, inflammatory bowel disease and inflammatory diseases can be enumerated. The present invention provides a pharmaceutical composition for prevention or treatment of these diseases.

Abstract: A system of controlling a wavelength of a laser beam is provided. The system comprises a stage for supporting a wafer, an optical convergence unit for emitting the laser beam moving in an optical path toward the stage, and a specific wavelength detecting sensor. The specific wavelength detecting sensor is disposed between the optical convergence unit and the stage. It includes a laser beam absorbing structural body for absorbing a specific wavelength of the laser beam emitting toward the stage. A wavelength controlling unit for selectively controlling the wavelength of the laser beam is also provided.

Abstract: Disclosed is a LED which can be mounted at high density on a large area display. Having a hole for heat sink in the ceramic substrate, the LED is superior in heat sink property. In order to fabricate the light emitting device, first, a secondary ceramic sheet is stacked on the ceramic substrate, followed by forming electrodes in a predetermined pattern on the secondary ceramic sheet around the hole for heat sink. On the ceramic substrate, an upper ceramic sheet with an opening is stacked to form a stacked ceramic substrate in such a way that a part of the electrodes are exposed through the opening. After co-firing the stacked ceramic substrate, a light emitting diode chip is mounted on the secondary ceramic sheet at a position corresponding to the hole for heat sink. Then, the electrodes are electrically connected with the LED chip, and the LED chip is sealed with insulating resin. A light emitting device using the LED and a fabrication method therefor are also disclosed.

Abstract: A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

Abstract: A method for manufacturing a gallium nitride (GaN)-based single crystalline substrate includes the steps of (a) forming a GaN-based single crystalline bulk on an upper surface of a growth substrate; (b) forming grooves through the growth substrate so that the growth substrate is patterned and divided into several units by the grooves, each of the grooves having a designated width; and (c) separating the GaN-based single crystalline bulk from the growth substrate by irradiating a laser beam on a lower surface of the growth substrate.

Abstract: A method of manufacturing a gallium nitride-based semiconductor light emitting device, includes sequentially forming, over a substrate, a first conductivity type clad layer, an active layer, and a second conductivity type clad layer, forming a transparent electrode over the second conductivity type clad layer, forming a photoresist film on the transparent electrode such that the transparent electrode is exposed at a predetermined region, removing respective portions of the transparent electrode, second conductivity type clad layer, and active layer corresponding to the predetermined region, thereby partially exposing the first conductivity type clad layer, removing the photoresist film, and forming first and second bonding electrodes on predetermined portions of the transparent electrode and second conductivity type clad layer, respectively.

Abstract: A cathode for a cathode ray tube with an improved emissivity of electrons is provided. The cathode includes a base metal and an electron emitting material layer containing an alkline earth metal oxide having barium, wherein the base metal has nickel as a main ingredient and contains a reducing metal with a high diffusion speed and a reducing metal with a low diffusion speed; and the electron emitting material layer comprises activating metal(s).

Abstract: There is provided a lithography device including a first revolver, a second revolver and a driving device. The first revolver includes a transmittance control filter. The second revolver includes transmittance profile filter. The driving device is capable of rotating the second revolver. According to the present invention, it is possible that a wanted transmittance and transmittance profile can be obtained by rotating a revolver, which has a plurality of transmittance control filters or transmittance profile filter. As a result, the present invention has the advantage of being able to revise variations of light intensity by changing illuminating modes and illuminating conditions.

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.