Abstract: The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.

Abstract: The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.

Abstract: An image sensor and a method of manufacturing the same are disclosed. A passivation layer on an interlayer dielectric layer has different thicknesses for neighboring pixels. Consequently, a phase of light incident on a pixel is out of phase with light incident on an adjacent pixel before it reaches a photodiode. As a result, diffraction of the incident light results in destructive interference between the pixels. Thus, cross talk between adjacent pixels can be prevented.

Abstract: A micro-lens array and a method for fabricating a micro-lens includes forming a first lens formation material layer on and/or over a micro-lens formation area of a semiconductor substrate, and then forming a portion of the lens formation material layer as a first micro-lens using a first mask. A second lens formation material layer is formed adjacent to the first micro-lens on and/or over the micro-lens formation area. The second lens formation material layer is also formed as a second micro-lens using a second mask which is a different type from that of the first mask.

Abstract: A method for fabricating a micro-lens includes forming a photo-resist film on and/or over a micro-lens formation area of a semiconductor substrate, and then forming a portion of the photo-resist film as a first micro-lens using a first gray-tone mask. A second micro-lens is then formed adjacent to the first micro-lens using another portion of the photo-resist film and a second gray-tone mask.

Abstract: A micro-lens array and a method for fabricating a micro-lens includes forming a first lens formation material layer on and/or over a micro-lens formation area of a semiconductor substrate, and then forming a portion of the lens formation material layer as a first micro-lens using a first mask. A second lens formation material layer is formed adjacent to the first micro-lens on and/or over the micro-lens formation area. The second lens formation material layer is also formed as a second micro-lens using a second mask which is a different type from that of the first mask.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating layer microlens formed in the trench of the interlayer dielectric layer. According to the method, a substrate including a pixel area and a logic circuit area is prepared; an interlayer dielectric layer is formed on the substrate; a first microlens pattern is formed on the interlayer dielectric layer on the pixel area; and a second microlens pattern is formed by etching the interlayer dielectric layer on the pixel area using the first microlens pattern as an etch mask. During the etching, a second photoresist pattern, exposing the first microlens pattern, can be used to protect the interlayer dielectric layer on the logic circuit area.

Abstract: Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.

Abstract: A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.

Abstract: A method for manufacturing an image sensor includes forming a photolithography key in a scribe lane of a first substrate over which circuitry is formed in an active region. A photodiode is formed on an active region of a second substrate. The second substrate is bonded to the first substrate such that the photodiode is electrically connected to the circuitry. The photolithography key in the scribe lane of the first substrate is opened. A pattern is formed on the active region of the bonded second substrate using the opened photolithography key on/over the first substrate.

Abstract: An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of an image sensor, a manufacturing method thereof, and the image sensor including the planar layer. Embodiments relate to a planar layer located under microlenses, the planar layer including valleys of patterns having a predetermined size, which may eliminate optical cross talk between adjacent pixels.

Abstract: An image device which includes reflowed color filters. Reflowed color filters may be formed by heat treating preliminary color filters. When preliminary color filters are reflowed, color filters of different colors may be formed continuous with each other. Contiguous color filters in an image device may reduce manufacturing costs, maximize optical efficiency, minimize noise, and/or minimize crosstalk.

Abstract: A method for fabricating a CMOS image sensor for preventing corrosion of a metal pad. The method for fabricating the CMOS image sensor can include sequentially forming a dielectric film, a metal pad having an opening, and a first passivation film on a semiconductor substrate having a scribe lane and a pixel region defined therein, forming a color filter layer on the first passivation film at the pixel region, forming an overcoat layer on the entire surface of the semiconductor substrate, including the metal pad, to reduce the step difference between the scribe lane and the pixel region, forming a micro lens on the overcoat layer at the pixel region, forming a photo resist to expose the overcoat layer at the scribe lane, performing an etching process on the entire surface of the semiconductor substrate to etch the overcoat layer at the scribe lane, and removing the photo resist by a cleaning process.

Abstract: An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.

Abstract: An image sensor and a method of manufacturing the same are disclosed. A passivation layer on an interlayer dielectric layer has different thicknesses for neighboring pixels. Consequently, a phase of light incident on a pixel is out of phase with light incident on an adjacent pixel before it reaches a photodiode. As a result, diffraction of the incident light results in destructive interference between the pixels. Thus, cross talk between adjacent pixels can be prevented.

Abstract: A Complementary Metal Oxide Semiconductor (CMOS) image sensor and a method for manufacturing the same are disclosed. The CMOS image sensor includes a photodiode formed in a semiconductor substrate, an inter dielectric layer formed over the semiconductor substrate in which the photodiode is formed, at least one metal line layer formed in the inter dielectric layer, an anti-reflection layer formed over the metal line layer in the inter dielectric layer, a color filter layer formed over the inter dielectric layer, and a micro-lens formed over the color filter layer.

Abstract: Provided is an image sensor and method of manufacturing the same. The image sensor can include a semiconductor substrate, a metal interconnection layer, an inorganic layer, lens seed patterns, and microlenses. The semiconductor substrate can include unit pixels. The metal interconnection layer can be disposed on the semiconductor substrate to provide signal and poser connections to the unit pixels. The inorganic layer can be disposed on the metal interconnection layer. The lens seed patterns are selectively disposed on the inorganic layer and are formed of an organic material. The microlenses are formed on the lens seed patterns.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating layer microlens formed in the trench of the interlayer dielectric layer. According to the method, a substrate including a pixel area and a logic circuit area is prepared; an interlayer dielectric layer is formed on the substrate; a first microlens pattern is formed on the interlayer dielectric layer on the pixel area; and a second microlens pattern is formed by etching the interlayer dielectric layer on the pixel area using the first microlens pattern as an etch mask. During the etching, a second photoresist pattern, exposing the first microlens pattern, can be used to protect the interlayer dielectric layer on the logic circuit area.

Abstract: Disclosed are embodiments of an image sensor and a method of manufacturing the same. The image sensor includes an insulating layer on a substrate, and a graded-index microlens in the insulating layer corresponding to each pixel of the image sensor.

Abstract: A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.