Abstract: Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.

Abstract: A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.

Abstract: Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.

Abstract: A method for manufacturing an image sensor includes forming a photolithography key in a scribe lane of a first substrate over which circuitry is formed in an active region. A photodiode is formed on an active region of a second substrate. The second substrate is bonded to the first substrate such that the photodiode is electrically connected to the circuitry. The photolithography key in the scribe lane of the first substrate is opened. A pattern is formed on the active region of the bonded second substrate using the opened photolithography key on/over the first substrate.

Abstract: A method for fabricating a CMOS image sensor for preventing corrosion of a metal pad. The method for fabricating the CMOS image sensor can include sequentially forming a dielectric film, a metal pad having an opening, and a first passivation film on a semiconductor substrate having a scribe lane and a pixel region defined therein, forming a color filter layer on the first passivation film at the pixel region, forming an overcoat layer on the entire surface of the semiconductor substrate, including the metal pad, to reduce the step difference between the scribe lane and the pixel region, forming a micro lens on the overcoat layer at the pixel region, forming a photo resist to expose the overcoat layer at the scribe lane, performing an etching process on the entire surface of the semiconductor substrate to etch the overcoat layer at the scribe lane, and removing the photo resist by a cleaning process.

Abstract: An image sensor may include an image sensor may include a photodiode formed over a semiconductor substrate. An interlayer dielectric, which may include a plurality of metal wires in a transistor region, may be formed over the semiconductor substrate, including a waveguide dielectric for guiding incident light in a photodiode region. A refractive layer may be formed at a bottom of the waveguide dielectric in the interlayer dielectric. A color filter may be formed over an upper surface of the interlayer dielectric. An overcoat may be formed over the color filter. A micro lens may be formed over the interlayer dielectric. Accordingly, high reflectivity at a bottom of the wave guide can be effectively restrained while guaranteeing reflectivity of the wave guide with respect light which is not vertically incident.

Abstract: An image sensor and a method for manufacturing thereof include a semiconductor substrate having a plurality of unit pixels formed therein, a dielectric film formed over the semiconductor substrate, a seed lens array including a plurality of seed lenses formed spaced apart by a gap of a predetermined width over the dielectric film, a color micro lens array formed over the seed lens array, the color micro lens array including a color micro lens formed over and contacting a respective one of the seed lenses. In accordance with embodiments, each color micro lens has a thickness that is one-half the predetermined width to thereby fill the gap between the seed lenses.

Abstract: An image sensor and fabricating method thereof may include a semiconductor substrate, a plurality of photodiodes formed on and/or over the semiconductor substrate, a first insulating layer formed on and/or over the semiconductor substrate including the plurality of photodiodes, at least one metal line formed on and/or over the first insulating layer, a second insulating layer having a plurality of wells formed on and/or over the plurality of photodiodes, a plurality of color filters formed by embedding color filter layers in a plurality of the wells, and a plurality of microlenses formed on and/or over the color filters.

Abstract: An image sensor and method for fabricating an image sensor are provided. The image sensor includes a substrate and a microlens array in a checkerboard pattern. In some embodiments, the checkerboard pattern involves alternating hydrophilic and hydrophobic microlenses.

Abstract: Embodiments consistent with the present invention provide a semiconductor device having a photo aligning key and a method for manufacturing the same. The semiconductor device includes a pattern photo aligning key formed on a scribe line of a semiconductor substrate, and a plurality of dummy pattern keys formed around the pattern photo aligning key, the dummy pattern keys having a width smaller than that of the pattern photo aligning key.

Abstract: Provided is an image sensor and method of manufacturing the same. The image sensor can include a semiconductor substrate, a metal interconnection layer, an inorganic layer, lens seed patterns, and microlenses. The semiconductor substrate can include unit pixels. The metal interconnection layer can be disposed on the semiconductor substrate to provide signal and poser connections to the unit pixels. The inorganic layer can be disposed on the metal interconnection layer. The lens seed patterns are selectively disposed on the inorganic layer and are formed of an organic material. The microlenses are formed on the lens seed patterns.

Abstract: Embodiments relate to an image sensor, and for directly manufacturing microlenses on color filter layers without forming a separate planarization layer, by forming the color filter layers having a relatively even step. According to embodiments, a method may include forming an interlayer dielectric layer on a semiconductor substrate formed with a plurality of photo diodes, forming color filter layers on the interlayer dielectric layer, forming a sacrifice layer on the whole surface including the color filter layers, making the steps of the color filter layers even by etching the upper surfaces of the color filter layers and the sacrifice layer, and forming microlenses on the color filter layers.

Abstract: Disclosed is an image sensor and a method of fabricating the same, including a color filter layer having a red color filter, a green color filter and a blue color filter, a planarization layer which is formed on the color filter layer and has a groove corresponding to boundary areas between the color filters, and a micro-lens array on the planarization layer.

Abstract: An image sensor and method for fabricating an image sensor are provided. The image sensor includes a substrate and a microlens array in a checkerboard pattern. In some embodiments, the checkerboard pattern involves alternating hydrophilic and hydrophobic microlenses.

Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor includes a photodiode region, an insulation layer structure, a light leakage preventing unit, color filters, and microlenses. The photodiode region in a pixel area of a semiconductor substrate generates an electric signal corresponding to entered light. The photodiode region includes a first photodiode, a second photodiode, and a third photodiode. The insulation layer structure includes trenches corresponding to boundaries between the first to third photodiodes. The light leakage preventing unit is formed in the trenches between the photodiodes and prevents light from passing through the trenches. The color filters are formed on the insulation layer structure corresponding to the first to third photodiodes, and the microlenses are disposed on the color filter corresponding to each of the color filters.

Abstract: An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor can include a lower layer on a substrate having a photodiode, a middle layer on the lower layer, and an upper layer on the middle layer. The middle layer can have a lower refractive index than the lower layer and the upper layer. The middle layer can also have stepped regions for filtering red, green, and blue light.

Abstract: An image sensor and a manufacturing method thereof are provided. An insulating layer structure can be formed on a photodiode region and can include a trench. A color filter structure can be formed on the insulating layer structure having color filters corresponding to photodiodes in the photodiode region. The upper surfaces of the color filters can be about even with each other.

Abstract: A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.

Abstract: An image device which includes reflowed color filters. Reflowed color filters may be formed by heat treating preliminary color filters. When preliminary color filters are reflowed, color filters of different colors may be formed continuous with each other. Contiguous color filters in an image device may reduce manufacturing costs, maximize optical efficiency, minimize noise, and/or minimize crosstalk.