Patents by Inventor Young Je Yun

Young Je Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080054389
    Abstract: An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of an image sensor, a manufacturing method thereof, and the image sensor including the planar layer. Embodiments relate to a planar layer located under microlenses, the planar layer including valleys of patterns having a predetermined size, which may eliminate optical cross talk between adjacent pixels.
    Type: Application
    Filed: August 30, 2007
    Publication date: March 6, 2008
    Inventor: Young-Je Yun
  • Publication number: 20080026587
    Abstract: Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for forming a first photoresist on a semiconductor substrate at one side of the outside of a trench pattern which will be formed, a first etching step of performing a predetermined dry etching method with respect to the first photoresist, a second exposure step of performing an exposure process for forming a second photoresist at the other side of the outside of the trench pattern, which is a side opposite to the first photoresist, and a second etching step of performing the predetermined dry etching method with respect to the second photoresist.
    Type: Application
    Filed: July 20, 2007
    Publication date: January 31, 2008
    Inventor: Young-Je Yun
  • Publication number: 20070146533
    Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor and method of manufacturing the same. The image sensor can include a plurality of photodiodes, an interlayer insulating layer, a color filter layer formed of a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes can be formed in a semiconductor substrate, and the interlayer insulating layer can be formed on the semiconductor substrate including the photodiodes. The plurality of color filters can be formed on the interlayer insulating layer such that each color filter corresponds to at least two of the plurality of photodiodes. The plurality of microlenses can be formed on the color filter layer.
    Type: Application
    Filed: December 15, 2006
    Publication date: June 28, 2007
    Inventor: Young Je Yun