Abstract: The present disclosure relates to a technique for estimating the inter-beat interval (IBI) of a ballistocardiograph (BCG) signal measured using a non-contact sensor, filtering and correcting inaccurate information in the inter-beat interval estimated through clustering, and outputting a heart rate measurement result based on the filtered and corrected inter-beat interval.

Abstract: An embodiment roof assembly for a vehicle includes a roof panel including a core, an upper skin attached to a top surface of the core, and a lower skin attached to a bottom surface of the core, a face sheet disposed above the roof panel, and a foam layer interposed between the roof panel and the face sheet.

Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate; a first interlayer insulating layer, on the substrate, comprising a first interconnection; a common source plate on the first interlayer insulating layer; a conductive layer extending in a first direction on the common source plate; a ferroelectric layer on one sidewall of the conductive layer; a channel layer on the ferroelectric layer; a first conductive pillar, on the channel layer, penetrating the common source plate and being connected to the first interconnection; and a second conductive pillar, on the channel layer, spaced apart from the first conductive pillar in the first direction and connected to the common source plate, the ferroelectric layer and the channel layer between the common source plate and the first conductive pillar.

Abstract: Provided is a ceiling storage system capable of correcting a working position and constantly checking stability of a structure by detecting an amount of change in a facility. According to the ceiling storage system, a transport vehicle moves to an upper portion of a first storage area of a plurality of storage areas in a state of gripping an article, and the transport vehicle measures a first distance value between the transport vehicle and the first storage area using a distance sensor and measures a relative position value between the transport vehicle and the first storage area using a vision sensor, before unloading the article from the first storage area.

Abstract: The present invention provides a multi-layer selector device exhibiting a low leakage current by controlling a threshold voltage. According to an embodiment of the present invention, the multi-layer selector device comprises: a substrate; a lower electrode layer disposed on the substrate; an insulating layer disposed on the lower electrode layer and having a via hole passing through to expose the lower electrode layer; a switching layer disposed on the lower electrode layer in the via hole, performing a switching operation by forming and destroying a conductive filament, and made of a multi-layer to control the formation of the conductive filament; and an upper electrode layer disposed on the switching layer.

Abstract: The inventive concept relates to an apparatus for treating a substrate. In an embodiment, the apparatus includes a process chamber having a process space in which the substrate is treated with a fluid in a supercritical state, a support unit that supports the substrate in the process space, a fluid supply unit that supplies the fluid into the process space, a filler member disposed to face the substrate placed on the support unit in the process space, and a measurement unit that measures a state in the process space, the measurement unit being provided in the filler member.

Abstract: A self-healing alloy contains 5 to 11% by weight of molybdenum (Mo), iron (Fe) as a remainder, and unavoidable impurities. A method for manufacturing the self-healing alloy includes heat treating the alloy or preparing an alloy raw material powder and sintering, homogenizing, and cooling the alloy raw material powder.

Abstract: The present disclosure provides a system and a method for reducing metal oxide to metal M1.

Abstract: The present disclosure relates to a metal oxide reduction method and, specifically, to a metal oxide reduction method which, in producing a high-grade alloy metal using a metal oxide as a raw material, enables operation in the atmosphere by moving away from an existing production process in an inert gas atmosphere, and is easy to commercialize and can maximize efficiency, as an eco-friendly method is used.

Abstract: An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to an outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from an outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround an outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.

Abstract: The present invention relates to a premelter for pre-melting silicon before supplying to a main crucible capable of accurately measuring an input amount of molten silicon input into an ingot growth crucible, thereby effectively controlling the input amount, and a method for controlling the same. According to an embodiment of the present invention, disclosed is a premelter for pre-melting silicon before supplying to a main crucible, comprising: a preliminary crucible for supplying silicon in a molten state to a main crucible in which an ingot is grown after heating the silicon material in a solid state to become silicon in a molten state; a preliminary crucible moving module configured to tilt the preliminary crucible to one of a first position in which the preliminary crucible contains the solid silicon material or the molten silicon or a second position where the molten silicon in the preliminary crucible flows into the main crucible; and a control unit for controlling the preliminary crucible moving module.

Abstract: An energy-saving ingot growing device is disclosed. The ingot growing device according to the present invention comprises: a chamber having provided therein a crucible heated by a heat source in order to melt silicon; a side surface insulating material provided inside the chamber so as to insulate the side surface of the crucible; and an observation part provided to penetrate the chamber and the side surface insulating material so that the inside of the crucible can be observed.

Abstract: Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible.

Abstract: The present invention relates to a continuous ingot growing apparatus, and more specifically, to a continuous ingot growing apparatus which melts a solid silicon material supplied to a preliminary crucible to supply the solid silicon material to a main crucible and which can adjust a supply amount of molten silicon while blocking floating matter floating on top of the molten silicon so as not to be supplied.

Abstract: Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

Abstract: An image sensor includes a pixel defining pattern in a mesh form, wherein a first division pattern divides a pixel area into two halves, a second division pattern divides the pixel area into two halves, a first diagonal division pattern divides the pixel area into two halves, a second diagonal division pattern divides the pixel area into two halves, and first through eighth photodiodes are arranged in the pixel area so divided.

Abstract: Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.

Abstract: An image display device according to an embodiment of the present disclosure includes a display panel, a touch sensor structure and an antenna electrode layer. The display panel includes a panel substrate, and an electrode structure and an insulation structure stacked on the panel substrate. The touch sensor structure is disposed on the display panel. The antenna electrode layer is disposed on the display panel at the same level as that of the touch sensor structure and at least partially overlaps the electrode structure of the display panel in a thickness direction. The antennal electrode layer is disposed in consideration of an electrode construction of the display panel and the touch sensor structure to provide a thin-layered image display device with high reliability.

Abstract: Provided is a relay switch device including a relay housing, a first upper fixing terminal and a second upper fixing terminal arranged side by side over an inside and an outside of the relay housing, a first lower fixing terminal electrically connected to the first upper fixing terminal and arranged under the first upper fixing terminal to be apart a predetermined distance from the first upper fixing terminal, and a second lower fixing terminal electrically connected to the second upper fixing terminal and arranged under the second upper fixing terminal to be apart a predetermined distance from the second upper fixing terminal, and a circuit mode switch module provided to selectively contact the first and second upper fixing terminals or the first and second lower fixing terminals by moving a predetermined distance.