Abstract: A display apparatus includes a display panel, a first gate driver, a second gate driver, a third gate driver, and a data driver. The display apparatus is operable in a low frequency driving mode, and the low frequency driving mode includes a writing frame and a holding frame. At least one of gate power voltages used to generate a first gate signal, a second gate signal, and an emission signal has a first voltage level in the writing frame of the low frequency driving mode and a second voltage level in the holding frame of the low frequency driving mode. The data voltage is applied to the pixel in the writing frame of the low frequency driving mode. The data voltage applied to the pixel in the writing frame of the low frequency driving mode is maintained in the holding frame of the low frequency driving mode.

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

Abstract: A pixel of a display device includes a capacitor; a light emitting diode; and first, second, third, and fourth transistors. The display device has a normal frequency mode and a low frequency mode. Two electrodes of the capacitor are respectively connected to a first voltage source and a gate node. A gate electrode of the first transistor is connected to the gate node. In a hold period in the low frequency mode, both the second and third transistors receive a scan signal, the third transistor diode-connects the first transistor, the fourth transistor receives an initialization signal and transfers an initialization voltage to the gate node, the scan signal is at a first off voltage level, and the initialization signal is at a second off voltage level unequal to the first off voltage level. The cathode of the light emitting diode is connected to a second voltage source.

Abstract: A pixel circuit includes a main-circuit that controls an organic light-emitting element by controlling a driving current to flow into the organic light-emitting element and a sub-circuit including a first compensation transistor including a gate terminal which receives a first gate signal, a second compensation transistor including a gate terminal which receives a second gate signal, and an initialization transistor including a gate terminal which receives an initialization signal. Here, in a low-frequency driving mode, a driving frequency of the first gate signal is N hertz (Hz), a driving frequency of the initialization signal is N Hz, a driving frequency of the second gate signal is M Hz, the first compensation transistor and the initialization transistor are turned on during a first time duration in N non-light-emitting periods per second, and the second compensation transistor is turned on during a second time duration in M non-light-emitting periods per second.

Abstract: A display apparatus includes a display panel displaying an image based on an input image data, a data driver outputting a data voltage to a data line, and a driving controller determining a driving frequency of the display panel based on the input image data. The driving controller includes a flicker value storage configured to store flicker values for grayscale values corresponding to the input image data, a voltage drop determiner configured to adjust a flicker value of the flicker values based on a voltage drop of the display panel, a still image determiner configured to determine whether the input image data is a still image or a video image, and a driving frequency determiner configured to determine the driving frequency of the display panel using the flicker value based on the input image data being the still image.

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

Abstract: A pixel includes: a storage capacitor connected between a first power supply voltage and a gate node; a first transistor including a gate electrode connected to the gate node; a second transistor to transfer a data signal to a source of the first transistor in response to a scan signal; a third transistor to diode-connect the first transistor in response to the scan signal, and including first and second sub-transistors serially connected between the gate node and a drain of the first transistor; a fourth transistor to transfer an initialization voltage to the gate node in response to an initialization signal, and including third and fourth sub-transistors serially connected between the gate node and the initialization voltage; and an organic light emitting diode including a cathode connected to a second power supply voltage. At least one of the second and fourth sub-transistors includes a bottom electrode.

Abstract: A pixel circuit includes a main-circuit that controls an organic light-emitting element by controlling a driving current to flow into the organic light-emitting element and a sub-circuit including a first compensation transistor including a gate terminal which receives a first gate signal, a second compensation transistor including a gate terminal which receives a second gate signal, and an initialization transistor including a gate terminal which receives an initialization signal. Here, in a low-frequency driving mode, a driving frequency of the first gate signal is N hertz (Hz), a driving frequency of the initialization signal is N Hz, a driving frequency of the second gate signal is M Hz, the first compensation transistor and the initialization transistor are turned on during a first time duration in N non-light-emitting periods per second, and the second compensation transistor is turned on during a second time duration in M non-light-emitting periods per second.

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

Abstract: Provided is an electronic device that includes a housing at least partially including a metal portion, a glass plate mounted on one surface of the housing, and a buffer disposed at least on the metal portion on one face of the housing and disposed adjacent to an edge of the glass plate.

Abstract: A display device includes a display unit. The display unit includes a first display area and a second display area. A first scan line, a first power line, and first pixels connected to the first scan line and the first power line are in the first display area. A second scan line, a second power line, and second pixels connected to the second scan line and the second power line are in the second display area. A scan driver is configured to sequentially provide a scan signal to the first scan line and the second scan line. A power supply is configured to provide a power source voltage that is varied independently to the first power line and the second power line.

Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

Abstract: Provided is an electronic device that includes a housing at least partially including a metal portion, a glass plate mounted on one surface of the housing, and a buffer disposed at least on the metal portion on one face of the housing and disposed adjacent to an edge of the glass plate.

Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.

Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.

Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.