Abstract: A flow rate control apparatus for construction equipment includes: a boom cylinder driven by hydraulic fluid; a first control valve for controlling a hydraulic fluid flow supplied to the boom cylinder; an option actuator driven by hydraulic fluid; a second control valve for controlling a hydraulic fluid flow supplied to the option actuator; a boom cylinder manipulation lever and an option actuator manipulation lever; a confluence line selectively confluence the hydraulic fluid supplied to the boom cylinder with the hydraulic fluid of the option actuator; a center bypass switching valve provided at the furthest downstream side of a fluid supply path of the first hydraulic pump; a confluence switching valve selectively opening and closing the confluence line; a confluence selection valve applying a pilot pressure to the confluence switching valve; and a controller for controlling the confluence selection valve.

Abstract: Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Abstract: There is provided a receiver optical module including a photodetector having a plurality of channels, a capacitor disposing block formed on an upper portion of the photodetector, a plurality of capacitors formed on the capacitor disposing block, and an electrical wiring configured to connect the plurality of capacitors to electrodes of a plurality of channels of the photodetector, wherein the plurality of capacitors are formed on the capacitor disposing block such that distance between the capacitors and the electrodes of the corresponding channels are the same. Distortion and loss of signal characteristics of high frequency can be reduced and quality of a signal can be enhanced.

Abstract: A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region.

Abstract: A method of controlling a speaker grill of a speaker including a play unit separable from the speaker grill in a vehicle includes: collecting at least one of information outputted by a sensor equipped in the vehicle and information indicating an operating state of a device equipped in the vehicle; determining an opening ratio of the speaker grill of the speaker based on the collected information; and controlling a motor device coupled to the speaker grill to achieve the opening ratio.

Abstract: Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: A method for automatic Bluetooth connection in a head unit of vehicle includes discovering an advertisement from a mobile device, based on a period of advertisement discovery, when at least one advertisement corresponding to the mobile device is discovered, changing the period of advertisement discovery, discovering the advertisement based on a changed period of advertisement discovery, and arranging a Bluetooth connection between a head unit and a mobile device corresponding to the discovered advertisement.

Abstract: Provided herein is a radio frequency probe apparatus including a RF waveguide including a ground electrode and a signal electrode, a register connected to the signal electrode, a RF connector including an outer conductor connected to the ground electrode, an inner conductor connected to the signal electrode, and a dielectric body filling a portion between the outer conductor and the inner conductor, and a single tip probe connected to the signal electrode of the RF waveguide, or the register.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.

Abstract: There is provided a receiver optical module including a photodetector having a plurality of channels, a capacitor disposing block formed on an upper portion of the photodetector, a plurality of capacitors formed on the capacitor disposing block, and an electrical wiring configured to connect the plurality of capacitors to electrodes of a plurality of channels of the photodetector, wherein the plurality of capacitors are formed on the capacitor disposing block such that distance between the capacitors and the electrodes of the corresponding channels are the same. Distortion and loss of signal characteristics of high frequency can be reduced and quality of a signal can be enhanced.