Abstract: Provided herein is an optical module including an optical bench having a first step with a first depth and a second step with a second depth that is smaller than the first depth; a silicon carrier disposed above the first step, and where at least one semiconductor chip is installed; an AWG chip (Arrayed Waveguide Grating chip) secured to the second step, extends up to the first step, and is chip-to-chip bonded with the silicon carrier above the first step; a lens disposed on an upper surface of the optical bench where the first step and the second step are not formed; and a metal package surrounding the optical bench, silicon carrier, AWG chip and lens, wherein at one side of the metal package, a double slit that includes an upper slit and a lower slit are formed, a DC FPCB (Direct Current FPCB) extends from outside towards inside the metal package through the upper slit and is secured to a support formed on an inner surface of the upper slit, and an RF FPCB (Radio Frequency FPCB) extends from outside towards

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: Provided herein is an optical module including an optical bench having a first step with a first depth and a second step with a second depth that is smaller than the first depth; a silicon carrier disposed above the first step, and where at least one semiconductor chip is installed; an AWG chip (Arrayed Waveguide Grating chip) secured to the second step, extends up to the first step, and is chip-to-chip bonded with the silicon carrier above the first step; a lens disposed on an upper surface of the optical bench where the first step and the second step are not formed; and a metal package surrounding the optical bench, silicon carrier, AWG chip and lens, wherein at one side of the metal package, a double slit that includes an upper slit and a lower slit are formed, a DC FPCB (Direct Current FPCB) extends from outside towards inside the metal package through the upper slit and is secured to a support formed on an inner surface of the upper slit, and an RF FPCB (Radio Frequency FPCB) extends from outside towards

Abstract: Provided is an adsorbent for carbon dioxide, including: a graphene oxide layer having an interconnected network structure; and carbon nitride formed on the graphene oxide layer.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: A method of operating a wavelength swept source apparatus includes generating a single mode light, and generating a basic optical comb including light rays having identical frequency differences with adjacent light rays by modulating the generated single mode light. The method further includes generating other optical combs that include the same number of light rays as that of light rays of the optical comb that has a frequency band different from that of the basic optical comb, and is distributed in a frequency band wider than that in which the basic optical comb is distributed, by modulating the light rays of the basic optical comb. The light rays of the basic optical comb and the light rays included in the other optical combs are sequentially emitted according to frequencies of the light rays of the basic optical comb and the light rays included in the other optical combs.

Abstract: Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer and an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region.

Abstract: Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: A method of operating a wavelength swept source apparatus includes generating a single mode light, and generating a basic optical comb including light rays having identical frequency differences with adjacent light rays by modulating the generated single mode light. The method further includes generating other optical combs that include the same number of light rays as that of light rays of the optical comb that has a frequency band different from that of the basic optical comb, and is distributed in a frequency band wider than that in which the basic optical comb is distributed, by modulating the light rays of the basic optical comb. The light rays of the basic optical comb and the light rays included in the other optical combs are sequentially emitted according to frequencies of the light rays of the basic optical comb and the light rays included in the other optical combs.

Abstract: Provided is a circuit protection device and a method of manufacturing the same including forming a plating lead line and a first coil pattern connected to the plating lead line on a substrate, forming an insulating layer on the first coil pattern and then forming a via hole exposing a portion of the first coil pattern, applying power through a plating lead line to form a via plug filling the via hole from the first coil pattern, and forming a second coil pattern connected to the via plug at an upper portion of the insulating layer.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

Abstract: Provided are structures for connecting trace lines of printed circuit boards and optical transceiver modules with the same. The module may include an optical transmitter/receiver part, a signal processing unit, a flexible PCB, and a rigid PCB. The flexible PCB may include a first signal line, and the rigid PCB may include a second signal line. The flexible PCB and the rigid PCB may be overlapped with each other. The first signal line and the second signal line may not be overlapped with each other and be electrically connected to each other by a junction soldering structure. It is possible to transmit high quality and high frequency signals through the first and second signal lines.

Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

Abstract: Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.

Abstract: Provided is a method of manufacturing a distributed feedback laser diode array (DFB-LDA) including: forming active layers corresponding to a plurality of channels using electron beam lithography; forming a plurality of mask patterns between the active layers; and growing the active layers using electron beam lithography, wherein the opening widths of the plurality of mask patterns corresponding to the plurality of channels are different from one another.

Abstract: Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.