Patents by Inventor Young Hee Kim

Young Hee Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12044813
    Abstract: Disclosed are a charge sensitive amplifier capable of minimizing a variation in a signal voltage of an output signal by applying a bias direct current to a gate of a feedback transistor, and a radiation sensor including the same. According to the charge sensitive amplifier and the radiation sensor including the same, it is possible to minimize a variation in a signal voltage of a charge sensitive amplifier output signal by applying a current, which is formed by mirroring a current bias circuit designed to be insensitive to PVT variations, to a gate of a feedback transistor. Furthermore, it is possible to reduce a variation in charging time and enable high-speed sensing by charging the signal voltage to the level of a common voltage VCOM by using a constant current supplied through a bandgap reference (BGR) circuit.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: July 23, 2024
    Assignees: CHANGWON NATIONAL UNIVERSITY INDUSTRY ACADEMY COOPERATION CORPS, ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young Hee Kim, Hong Zhou Jin, Kyung Hwan Park
  • Patent number: 12032469
    Abstract: Provided is a system and method that generates an artificial intelligence workflow model in which image conversion, measurement, and image searches can be performed, by selecting/combining algorithms suitable for a workflow having been created/modified according to a subject area such as a display manufacturing process, and that conducts a simulation of the generated model. An explainable artificial intelligence modelling and simulation method includes designing an artificial intelligence workflow model once algorithms suitable for a workflow having been created/modified according to a subject area are selected from algorithms stored in advance; and conducting, when input information is input, a simulation of the artificial intelligence workflow model for the input information.
    Type: Grant
    Filed: January 2, 2020
    Date of Patent: July 9, 2024
    Assignee: SK HOLDINGS CO., LTD.
    Inventors: Byung Min Lee, Young Hee Kim, Jong Moon Kim, Ki Peum Chun
  • Publication number: 20230150843
    Abstract: A device for selectively removing a perfluorinated compound may include an adsorption electrooxidation tank including a reaction unit having a plurality of electrodes and granular activated carbon configured to oxidize and decompose a perfluorinated compound in raw water through adsorption and electrooxidation, a power supply device configured to supply power to the adsorption electrooxidation tank, and a head adjustment pipe unit configured to maintain a water level within the reaction unit at a height greater than or equal to a reaction height of the electrode.
    Type: Application
    Filed: November 4, 2022
    Publication date: May 18, 2023
    Inventors: Hae Sol SHIN, Hyeong Soo KIM, No Hyeok PARK, Yong Je LEE, Nam Jong YOO, Young Hee KIM
  • Publication number: 20220066905
    Abstract: Provided is a system and method that generates an artificial intelligence workflow model in which image conversion, measurement, and image searches can be performed, by selecting/combining algorithms suitable for a workflow having been created/modified according to a subject area such as a display manufacturing process, and that conducts a simulation of the generated model. An explainable artificial intelligence modelling and simulation method according to an embodiment of the present invention comprises the steps of: designing an artificial intelligence workflow model once algorithms suitable for a workflow having been created/modified according to a subject area are selected from algorithms stored in advance; and conducting, when input information is input, a simulation of the artificial intelligence workflow model for the input information.
    Type: Application
    Filed: January 2, 2020
    Publication date: March 3, 2022
    Applicant: SK HOLDINGS CO., LTD
    Inventors: Byung Min LEE, Young Hee KIM, Jong Moon KIM, Ki Peum CHUN
  • Publication number: 20210405224
    Abstract: Disclosed are a charge sensitive amplifier capable of minimizing a variation in a signal voltage of an output signal by applying a bias direct current to a gate of a feedback transistor, and a radiation sensor including the same. According to the charge sensitive amplifier and the radiation sensor including the same, it is possible to minimize a variation in a signal voltage of a charge sensitive amplifier output signal by applying a current, which is formed by mirroring a current bias circuit designed to be insensitive to PVT variations, to a gate of a feedback transistor. Furthermore, it is possible to reduce a variation in charging time and enable high-speed sensing by charging the signal voltage to the level of a common voltage VCOM by using a constant current supplied through a bandgap reference (BGR) circuit.
    Type: Application
    Filed: June 29, 2021
    Publication date: December 30, 2021
    Applicants: CHANGWON NATIONAL UNIVERSITY Industry Academy Cooperation Corps, Electronics and Telecommunications Research Institute
    Inventors: Young Hee KIM, Hong Zhou JIN, Kyung Hwan PARK
  • Patent number: 10685454
    Abstract: An apparatus and method for generating synthetic training data for motion recognition. The method includes generating a three-dimensional (3D) human body model in real time according to motion of a human body, converting volume data of the 3D human body model into a 3D linear structure and extracting skeletal joint information, generating a data set of a human body image and skeletal joint information by rendering the 3D human body model and the skeletal joint information, and providing the data set of the image and the skeletal joint information as synthetic training data for motion recognition.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: June 16, 2020
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young Hee Kim, Jin Seo Kim, Soon Chan Park, Jae Hui Park, Ji Young Park, Kwang Hyun Shim, Moon Wook Ryu, Hyuk Jeong
  • Publication number: 20200138336
    Abstract: Provided are a method and an apparatus for determining a breathing status of a person using a depth camera. The method of determining a breathing status of a person using a depth camera may include acquiring a depth map by photographing one side of a person using a depth camera, extracting a region of the person by separating a background from the acquired depth map, extracting a breathing region from the extracted region of the person, obtaining a depth value for each point of the extracted breathing region for a preset time, and determining a breathing status including a volume of breathing and the number of the breathings by analyzing the obtained depth value. Therefore, it is possible to accurately determine the breathing status of the person in a non-contact manner.
    Type: Application
    Filed: December 28, 2018
    Publication date: May 7, 2020
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Kwang Hyun SHIM, Ji Young PARK, Hyuk JEONG, Young Hee KIM, Jin Seo KIM, Sam Yeul NOH, Moon Wook RYU, Soon Chan PARK, Woo Jin JEON
  • Publication number: 20190295278
    Abstract: An apparatus and method for generating synthetic training data for motion recognition. The method includes generating a three-dimensional (3D) human body model in real time according to motion of a human body, converting volume data of the 3D human body model into a 3D linear structure and extracting skeletal joint information, generating a data set of a human body image and skeletal joint information by rendering the 3D human body model and the skeletal joint information, and providing the data set of the image and the skeletal joint information as synthetic training data for motion recognition.
    Type: Application
    Filed: November 29, 2018
    Publication date: September 26, 2019
    Inventors: Young Hee KIM, Jin Seo KIM, Soon Chan PARK, Jae Hui PARK, Ji Young PARK, Kwang Hyun SHIM, Moon Wook RYU, Hyuk JEONG
  • Publication number: 20180154215
    Abstract: A user customized training system according to the present invention includes a sensor module configured to sense a user's motion; a memory in which a program for training is stored; and a processor configured to execute the program stored in the memory, wherein, when the program is executed, the processor acquires coordinates that correspond to the sensed motion, compares the user's motion with pre-stored erroneous motions on the basis of body information generated on the basis of the coordinates, provides a pre-stored set of motion data when a result of the comparison indicates that the user's motion corresponds to an erroneous motion, and, when the sensor module senses a motion of the user corresponding to the set of motion data, provides a training set corresponding to a result of analyzing the sensed motion.
    Type: Application
    Filed: November 30, 2017
    Publication date: June 7, 2018
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Moon Wook RYU, Ji Young PARK, Young Hee KIM, Soon Chan PARK, Kwang Hyun SHIM, Jae Ho LEE, Ju Yong CHANG, Hyuk JEONG
  • Patent number: 9809634
    Abstract: Provided are a branched multi-peptide composition and a vaccine including the same. The branched multi-peptide vaccine according to the present invention is easy to be produced and utilized, thereby being easily applied to the treatment, and is capable of maintaining stable reaction in vivo, such that it is expected that the branched multi-peptide vaccine according to the present invention acts as an effective vaccine. Further, for the tumor antigen peptide, the present invention may select an antigen that is largely expressed in a malignant brain tumor. In addition, from now on, it is expected that tumor antigens having a large expression level may be analyzed depending on tumor characteristics of an individual patient, such that the branched multi-peptide vaccine according to the present invention may be utilized for producing personalized branched peptides and vaccines using the same.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: November 7, 2017
    Assignee: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Tae-Young Jung, Young-Hee Kim
  • Patent number: 9771745
    Abstract: The present invention relates to a closed force transmission device in which an insertion depth of a latch bolt inserted into a latch bolt insertion groove can be adjusted to improve safety and components are simplified to allow for ease of assembly and to improve durability. The present invention also relates to a safety door lock using the device. The closed force transmission device of the present invention includes: a cylindrical body housing of which both sides are opened to penetrate a door; a main body slidably arranged within the body housing such that the main body moves in a straight line direction by the force applied from an external source, the main body having at least one tilt surface and a main body movement space formed orthogonally to the straight movement direction in a portion corresponding to the tilt surface.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: September 26, 2017
    Inventor: Young Hee Kim
  • Patent number: 9722031
    Abstract: A method for fabricating a semiconductor device may include receiving a gated substrate comprising a substrate with a channel layer and a gate structure formed thereon, over-etching the channel layer to expose an extension region below the gate structure, epitaxially growing a halo layer on the exposed extension region using a first in-situ dopant and epitaxially growing a source or drain on the halo layer using a second in-situ dopant, wherein the first in-situ dopant and the second in-situ dopant are of opposite doping polarity. Using an opposite doping polarity may provide an energy band barrier for the semiconductor device and reduce leakage current. A corresponding apparatus is also disclosed herein.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: August 1, 2017
    Assignee: International Business Machines Corporation
    Inventors: Cheng-Wei Cheng, Pranita Kerber, Young-Hee Kim, Effendi Leobandung, Yanning Sun
  • Patent number: 9711416
    Abstract: A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces. The epitaxial semiconductor material can be different from the single crystalline semiconductor material, and the semiconductor shell can be bilaterally strained due to lattice mismatch. A fin field effect transistor including a strained channel can be formed. Further, the semiconductor shell can advantageously alter properties of the source and drain regions, for example, by allowing incorporation of more dopants or by facilitating a metallization process.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: July 18, 2017
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Jinghong Li, Dae-Gyu Park
  • Patent number: 9711417
    Abstract: A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces. The epitaxial semiconductor material can be different from the single crystalline semiconductor material, and the semiconductor shell can be bilaterally strained due to lattice mismatch. A fin field effect transistor including a strained channel can be formed. Further, the semiconductor shell can advantageously alter properties of the source and drain regions, for example, by allowing incorporation of more dopants or by facilitating a metallization process.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: July 18, 2017
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Jinghong Li, Dae-Gyu Park
  • Patent number: 9679775
    Abstract: An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Furthermore, the approach includes alloying a metal layer with a dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 13, 2017
    Assignee: International Business Machines Corporation
    Inventors: Kevin K. Chan, Marinus J. P. Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer, Dae-Gyu Park, Uzma Rana, Tsong-Lin Tai
  • Patent number: 9627482
    Abstract: A method for fabricating a semiconductor device may include receiving a gated substrate comprising a substrate with a channel layer and a gate structure formed thereon, over-etching the channel layer to expose an extension region below the gate structure, epitaxially growing a halo layer on the exposed extension region using a first in-situ dopant and epitaxially growing a source or drain on the halo layer using a second in-situ dopant, wherein the first in-situ dopant and the second in-situ dopant are of opposite doping polarity. Using an opposite doping polarity may provide an energy band barrier for the semiconductor device and reduce leakage current. A corresponding apparatus is also disclosed herein.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: April 18, 2017
    Assignee: International Business Machines Corporation
    Inventors: Cheng-Wei Cheng, Pranita Kerber, Young-Hee Kim, Effendi Leobandung, Yanning Sun
  • Publication number: 20170037154
    Abstract: Provided are a branched multi-peptide composition and a vaccine including the same. The branched multi-peptide vaccine according to the present invention is easy to be produced and utilized, thereby being easily applied to the treatment, and is capable of maintaining stable reaction in vivo, such that it is expected that the branched multi-peptide vaccine according to the present invention acts as an effective vaccine. Further, for the tumor antigen peptide, the present invention may select an antigen that is largely expressed in a malignant brain tumor. In addition, from now on, it is expected that tumor antigens having a large expression level may be analyzed depending on tumor characteristics of an individual patient, such that the branched multi-peptide vaccine according to the present invention may be utilized for producing personalized branched peptides and vaccines using the same.
    Type: Application
    Filed: December 31, 2015
    Publication date: February 9, 2017
    Applicant: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Tae-Young Jung, Young-Hee Kim
  • Publication number: 20160329211
    Abstract: An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Furthermore, the approach includes alloying a metal layer with a dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature.
    Type: Application
    Filed: July 15, 2016
    Publication date: November 10, 2016
    Inventors: Kevin K. Chan, Marinus J.P. Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer, Dae-Gyu Park, Uzma Rana, Tsong-Lin Tai
  • Patent number: 9489740
    Abstract: Provided are an apparatus and method for tracking a camera that reconstructs a real environment in three dimensions by using reconstruction segments and a volumetric surface. The camera tracking apparatus using reconstruction segments and a volumetric surface includes a reconstruction segment division unit configured to divide three-dimensional space reconstruction segments extracted from an image acquired by a camera, a transformation matrix generation unit configured to generate a transformation matrix for at least one reconstruction segment among the reconstruction segments obtained by the reconstruction segment division unit, and a reconstruction segment connection unit configured to rotate or move the at least one reconstruction segment according to the transformation matrix generated by the reconstruction segment division unit and connect the rotated and moved reconstruction segment with another reconstruction segment.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: November 8, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young Hee Kim, Jin Ho Kim, Ki Hong Kim, Gil Haeng Lee
  • Publication number: 20160322500
    Abstract: A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces. The epitaxial semiconductor material can be different from the single crystalline semiconductor material, and the semiconductor shell can be bilaterally strained due to lattice mismatch. A fin field effect transistor including a strained channel can be formed. Further, the semiconductor shell can advantageously alter properties of the source and drain regions, for example, by allowing incorporation of more dopants or by facilitating a metallization process.
    Type: Application
    Filed: July 11, 2016
    Publication date: November 3, 2016
    Applicant: International Business Machines Corporation
    Inventors: Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Jinghong Li, Dae-Gyu Park