Abstract: An antenna device is provided. The antenna device includes a first antenna patch configured to transmit and receive an RF signal in a first frequency bandwidth and disposed a first dielectric layer; a second antenna patch disposed on a second dielectric layer and coupled to the first antenna patch; a third antenna patch disposed on a third dielectric layer and coupled to the second antenna patch; and a fourth antenna patch configured to transmit and receive an RF signal in the second frequency bandwidth, wherein the second antenna patch includes a plurality of first sub-antenna patches that do not overlap the first antenna patch, and the third antenna patch includes a plurality of second sub-antenna patches that overlap the first sub-antenna patches.

Abstract: An antenna device includes a dielectric resonator antenna configured to transmit and/or receive a first RF signal, a patch antenna pattern configured to transmit and/or receive a second RF signal, and at least partially overlaps the dielectric resonator antenna in a vertical direction, a first feed via configured to feed to the dielectric resonator antenna, and a second feed via configured to feed to the patch antenna pattern, wherein a frequency of the first RF signal is lower than a frequency of the second RF signal.

Abstract: An antenna apparatus includes: a ground plane including first sides parallel to a first direction and second sides parallel to a second direction, on a plane formed in the first and second directions; a dielectric layer disposed on the ground plane in a third direction; an antenna patch overlapping the ground plane in the third direction; and vias connected to the ground plane and passing through at least a portion of the dielectric layer. Edges of the vias at least partially overlap the first sides of the ground plane in the third direction.

Abstract: A power amplifier system includes: a drive stage configured to amplify an RF input signal and implemented in a substrate containing silicon; a power stage including a carrier amplifier configured to amplify a base signal from the RF input signal as amplified by the drive stage, and a peaking amplifier configured to amplify a peak signal from the RF input signal as amplified by the drive stage, the power stage being implemented in a substrate containing gallium arsenide; and a phase compensation circuit configured to change a phase of the RF input signal, wherein either the carrier amplifier or the peaking amplifier is connected to the phase compensation circuit.

Abstract: An antenna apparatus includes antennas, each having first and second feeding portions facing each other across a dielectric layer, and third and fourth feeding portions facing each other across the dielectric layer, and a signal application unit configured to apply a wireless communication signal to the antennas, and including a plurality of output ports, wherein the first and second feeding portions are configured to receive electric signals having a first polarization characteristic, and are respectively connected to first and second output ports that are different from each other among the plurality of output ports, and the third and fourth feeding portions are configured to receive electric signals having a second polarization characteristic that is different from the first polarization characteristic, and are respectively connected to third and fourth output ports that are different from each other among the plurality of output ports.

Abstract: An antenna device includes: a dielectric layer including a first edge extending in a first direction and a second edge, shorter that the first edge, extending in a second direction; a first feed via penetrating a portion of the dielectric layer in a third direction, and disposed adjacent to the second edge; a second feed via penetrating a portion of the dielectric layer in the third direction, disposed adjacent to the first edge; a feed pattern connected to the second feed via; and an antenna patch disposed on the second feed via and the feed pattern in the third direction, and coupled to the first feed via, the second feed via, and the feed pattern. The antenna patch overlaps the first feed via in a direction parallel to the first direction or the second direction. The antenna patch overlaps the feed pattern in a direction parallel to the third direction.

Abstract: A power amplifier system includes: a base substrate; a driver stage configured to receive and amplify an RF input signal, wherein the driver stage is disposed within the base substrate and is implemented in a first substrate; and a power stage configured to receive the RF input signal amplified by the driver stage and amplify the RF input signal amplified by the driver stage, wherein the power stage is disposed outside the base substrate and is implemented in a second substrate independent from the first substrate.

Abstract: An antenna device includes first and second dielectric layers. The first dielectric layer includes first and second sides facing each other in a third direction. The second dielectric layer includes third and fourth sides facing each other in the third direction. A first antenna patch is disposed on the first side of the first dielectric layer. A second antenna patch is disposed on the third side of the second dielectric layer. Signals with a first frequency bandwidth are transmitted or received electrical signals applied to the first antenna patch. Signals with a different second frequency bandwidth are transmitted or received by an electrical signal applied to the second antenna patch. A height of the second dielectric layer measured to the third side from the fourth side in a direction parallel to a third direction is greater than a height of the first dielectric layer measured to the first side from the second side.

Abstract: A biological information detecting apparatus includes: an LC resonant pressure sensor including a resonant circuit including a capacitor and an inductor, and having a resonant frequency that changes depending on a change in external pressure applied to the capacitor; and an integrated circuit (IC) chip package including a coil type antenna radiating a radio frequency (RF) signal within a preset frequency band, wherein a change in the resonant frequency results in a change in a power transmission rate depending on a inductive coupling between the resonant frequency and a frequency of the RF signal. The IC chip package includes the coil type antenna disposed in a region overlapping the LC resonant pressure sensor in a plan view of the IC chip package.

Abstract: A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

Abstract: A radio frequency (RF) switch system, a RF switch protective circuit, and a protecting method thereof are provided. The RF switch system may include a RF switch and a protective circuit. The RF switch may be connected between a port that receives a RF signal and a ground. The protective circuit may detect a first voltage that is a voltage that is generated when the first RF switch is turned off, and may transmit an impedance value that is varied based on the first voltage to the port.

Abstract: A power amplifier, a power amplifier system, and an operating method thereof are provided. The power amplifier system may include a power amplifier, a power amplifier controller, and a voltage generator. The power amplifier may include a plurality of power transistor cells each of which receives an RF signal through a control terminal thereof to amplify the RF signal. The power amplifier controller may control turn-on and turn-off operations of at least one power transistor cell among the plurality of power transistor cells based on a power mode. The voltage generator may generate a power supply voltage supplied to first terminals of the power transistor cells and may change the power supply voltage depending on the power mode.

Abstract: A semiconductor package includes a core layer formed of a ferromagnetic material, and includes a frame passing through the core layer and having a through-hole, a semiconductor chip disposed in the through-hole of the frame, and having an active surface on which a connection pad is disposed, and an inactive surface opposite to the active surface, an encapsulant covering at least a portion of the semiconductor chip, and a first connection structure including a first redistribution layer disposed on the active surface of the semiconductor chip and electrically connected to the connection pad.

Abstract: A dielectric resonator antenna includes: a first dielectric block; at least one second dielectric block stacked on the first dielectric block in a first direction; and a feed unit disposed in the first dielectric block. A side surface of the first dielectric block facing a second direction crossing the first direction is exposed to an outside of the dielectric resonator antenna.

Abstract: An antenna device including: a ground plane; an antenna pattern overlapping the ground plane with respect to a first direction; a dielectric layer interposed between the ground plane and the antenna pattern; a feed via coupled with the antenna pattern and penetrating at least a portion of the dielectric layer; a ground via connected to the ground plane and penetrating at least a portion of the dielectric layer; and a ground pattern extending from the ground via and disposed adjacent to a lateral surface of the feed via in a second direction that forms a predetermined angle with the first direction.

Abstract: An antenna apparatus including: a first insulation layer defining a cavity; an antenna and an electronic element disposed in the cavity of the first insulation layer; a second insulation layer disposed on a first surface facing a first direction among surfaces of the antenna and on a second surface facing the first direction among surfaces of the electronic element; and a connection wire disposed on a third surface facing the first direction among surfaces of the second insulation layer and configured to electrically connect the antenna and the electronic element. The connection wire is disposed on the second insulation layer, is disposed within a first contact hole overlapping the electronic element, and overlaps the antenna.

Abstract: An antenna apparatus includes: a first dielectric layer having a first dielectric constant; a first patch antenna pattern disposed in the first dielectric layer; a second dielectric layer having a second dielectric constant; a second patch antenna pattern disposed on the second dielectric layer; a first feed via coupled to the first patch antenna pattern; and a second feed via coupled to the second patch antenna pattern. The first dielectric constant is higher than the second dielectric constant, and a frequency of a signal transmitted/received by the first patch antenna pattern is lower than a frequency of a signal transmitted/received by the second patch antenna pattern.

Abstract: A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.

Abstract: A method of manufacturing a semiconductor package includes preparing a core substrate having an upper surface and a lower surface, and including a cavity. A passive component is disposed in the cavity. A first insulating layer is formed on the upper surface of the core substrate and in the cavity and encapsulates the passive component. Through-vias are formed that penetrate the core substrate and the first insulating layer, and a first wiring layer is formed on the first insulating layer. The first wiring layer connects the through-vias and the passive component. A connection structure including an insulating member is formed on the first insulating layer and a redistribution layer is formed in the insulating member. The redistribution layer is connected to the first wiring layer. A semiconductor chip is disposed on an upper surface of the connection structure. The semiconductor chip has connection pads connected to the redistribution layer.

Abstract: A semiconductor package includes: an interposer substrate including a core substrate and a connection structure, the core substrate having a cavity and having through-vias connecting upper and lower surfaces thereof, and the connection structure including an insulating member on the upper surface and a redistribution layer on the insulating member; a semiconductor chip on an upper surface of the connection structure and including connection pads connected to the redistribution layer; a passive component accommodated in the cavity; a first insulating layer disposed between the core substrate and the connection structure; a first wiring layer on the first insulating layer and connecting the through-vias and the passive component to the redistribution layer; a second insulating layer on the lower surface of the core substrate; and a second wiring layer on a lower surface of the second insulating layer and connected to the through-vias.