Patents by Inventor Youseok Suh
Youseok Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11950412Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.Type: GrantFiled: February 14, 2022Date of Patent: April 2, 2024Assignee: Longitude Flash Memory Solutions LTD.Inventors: Youseok Suh, Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Jean Wu
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Patent number: 11901434Abstract: In some aspects, a semiconductor die includes an insulation layer disposed on a substrate, a gate spacer disposed in the insulation layer, a gate disposed between the gate spacer, a first dielectric gate layer disposed on the gate between the gate spacer, a second dielectric gate layer disposed on the first dielectric gate layer between the gate spacer, a gate contact coupled to the gate and in contact with the first dielectric gate layer and the second dielectric gate layer, and a source/drain contact that has a single inner spacer.Type: GrantFiled: April 30, 2021Date of Patent: February 13, 2024Assignee: QUALCOMM IncorporatedInventors: Junjing Bao, Haining Yang, Youseok Suh
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Publication number: 20230009977Abstract: Source/drain contacts between transistor gates with abbreviated inner spacers for improved contact area are disclosed. Related methods of fabricating source/drain contacts and abbreviated inner spacers are also disclosed. Inner spacers formed on sidewalls of the gates of adjacent transistors are abbreviated to reduce an amount of the space the inner spacers occupy on the source/drain region, increasing a critical dimension of the source/drain contact. Abbreviated inner spacers extend from a top of the gate over a portion of the sidewalls to provide leakage current protection but do not fully extend to the semiconductor substrate. As a result, the critical dimension of the source/drain contact can extend from a sidewall on a first gate to a sidewall on a second gate. A source/drain contact formed between gates with abbreviated inner spacers has a greater surface area in contact with the source/drain region providing decreased contact resistance.Type: ApplicationFiled: July 9, 2021Publication date: January 12, 2023Inventors: Junjing Bao, Haining Yang, Youseok Suh
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Publication number: 20220352347Abstract: In some aspects, a semiconductor die includes an insulation layer disposed on a substrate, a gate spacer disposed in the insulation layer, a gate disposed between the gate spacer, a first dielectric gate layer disposed on the gate between the gate spacer, a second dielectric gate layer disposed on the first dielectric gate layer between the gate spacer, a gate contact coupled to the gate and in contact with the first dielectric gate layer and the second dielectric gate layer, and a source/drain contact that has a single inner spacer.Type: ApplicationFiled: April 30, 2021Publication date: November 3, 2022Inventors: Junjing BAO, Haining YANG, Youseok SUH
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Patent number: 11444201Abstract: Certain aspects of the present disclosure generally relate to techniques for reducing leakage current in polysilicon-on-active-edge structures. An example transistor structure includes one or more active devices and at least one dummy device disposed at an edge of the transistor structure, wherein the at least one dummy device has a different gate structure than the one or more active devices.Type: GrantFiled: March 26, 2020Date of Patent: September 13, 2022Assignee: QUALCOMM IncorporatedInventors: Youn Sung Choi, Kwanyong Lim, Youseok Suh, Hyunwoo Park
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Publication number: 20220216328Abstract: Certain aspects of the present disclosure generally relate to a self-aligned contact with gate-to-contact short prevention in a multi-gate transistor structure, such as a multi-gate fin field-effect transistor (finFET) structure. An example multi-gate transistor structure includes a semiconductor fin, a first gate, a first spacer, a source or drain contact, and a first nonconductive liner. The first gate is disposed above and partially surrounds a portion of the semiconductor fin. The first spacer is located adjacent to a side of the first gate. The source or drain contact is coupled to a source or drain region of the semiconductor fin. The first nonconductive liner is disposed between the source or drain contact and the first spacer.Type: ApplicationFiled: January 4, 2021Publication date: July 7, 2022Inventors: Youseok SUH, Hyunwoo PARK, Youn Sung CHOI, Kwanyong LIM
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Publication number: 20220173116Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.Type: ApplicationFiled: February 14, 2022Publication date: June 2, 2022Inventors: Youseok Suh, Sung-Yong Chung, Ya-Fen LIN, Yi-Ching Jean Wu
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Patent number: 11251189Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.Type: GrantFiled: April 10, 2019Date of Patent: February 15, 2022Assignee: LONGITUDE FLASH MEMORY SOLUTIONS LTD.Inventors: Youseok Suh, Sung-Yong Chung, Ya-Fen Lin, Yi-Ching Jean Wu
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Publication number: 20210305429Abstract: Certain aspects of the present disclosure generally relate to techniques for reducing leakage current in polysilicon-on-active-edge structures. An example transistor structure includes one or more active devices and at least one dummy device disposed at an edge of the transistor structure, wherein the at least one dummy device has a different gate structure than the one or more active devices.Type: ApplicationFiled: March 26, 2020Publication date: September 30, 2021Inventors: Youn Sung CHOI, Kwanyong LIM, Youseok SUH, Hyunwoo PARK
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Patent number: 11069699Abstract: A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.Type: GrantFiled: August 3, 2020Date of Patent: July 20, 2021Assignee: Cypress Semiconductor CorporationInventors: Ming Sang Kwan, Shenqing Fang, Youseok Suh, Michael A. Van Buskirk
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Publication number: 20210143153Abstract: Fin Field-Effect Transistor (FET) (FinFET) circuits employing a replacement N-type FET (NFET) source/drains (S/D) are disclosed. The disclosed method for forming a FinFET circuit includes forming two P-type epitaxial S/Ds (epi-S/Ds), one on the fin in the P-type diffusion region and one on the fin in the N-type diffusion region, forming a boundary layer to isolate the P-type epi-S/Ds, and then replacing the P-type epi-S/D under the boundary layer in the N-type diffusion region with an N-type epi-S/D. A mask is employed in steps for replacing the P-type epi-S/D with an N-type epi-S/D in the disclosed method but differs from the mask in the previous method such that vulnerability to variations thereof is reduced. The mask in the disclosed method has a larger acceptable range of variation within which no defects are created, so the disclosed method is less vulnerable to process variation and prevents short defects.Type: ApplicationFiled: November 13, 2019Publication date: May 13, 2021Inventors: Kwanyong Lim, Hyunwoo Park, Youn Sung Choi, Youseok Suh
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Publication number: 20210082927Abstract: A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.Type: ApplicationFiled: August 3, 2020Publication date: March 18, 2021Applicant: Cypress Semiconductor CorporationInventors: Ming Sang Kwan, Shenqing Fang, Youseok Suh, Michael A. VAN BUSKIRK
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Patent number: 10833017Abstract: A semiconductor device may include a source/drain contact trench adjacent to a gate. The source/drain contact trench may include a first portion and a second portion on the first portion. The semiconductor device also may include an insulating contact spacer liner within the source/drain contact trench. The insulating contact spacer liner contacts the first portion but not the second portion of the source/drain contact trench. The semiconductor device may further include a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench. The conductive material may land in a source/drain region of the semiconductor device.Type: GrantFiled: November 15, 2016Date of Patent: November 10, 2020Assignee: QUALCOMM IncorporatedInventors: Yanxiang Liu, Haining Yang, Youseok Suh, Jihong Choi, Junjing Bao
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Patent number: 10756101Abstract: A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.Type: GrantFiled: January 20, 2020Date of Patent: August 25, 2020Assignee: Cypress Semiconductor CorporationInventors: Ming Sang Kwan, Shenqing Fang, Youseok Suh, Michael A. Van Buskirk
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Publication number: 20200168618Abstract: A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.Type: ApplicationFiled: January 20, 2020Publication date: May 28, 2020Applicant: Cypress Semiconductor CorporationInventors: Ming Sang Kwan, Shenqing Fang, Youseok Suh, Michael A. VAN BUSKIRK
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Patent number: 10622370Abstract: A method for fabricating a memory device with a self-aligned trap layer and rounded active region corners is disclosed. In the present invention, an STI process is performed before any of the charge-trapping and top-level layers are formed. Immediately after the STI process, the sharp corners of the active regions are exposed. Because these sharp corners are exposed at this time, they are available to be rounded through any number of known rounding techniques. Rounding the corners improves the performance characteristics of the memory device. Subsequent to the rounding process, the charge-trapping structure and other layers can be formed by a self-aligned process.Type: GrantFiled: September 25, 2015Date of Patent: April 14, 2020Assignee: Monterey Research, LLCInventors: Tim Thurgate, Shenqing Fang, Kuo-Tung Chang, Youseok Suh, Meng Ding, Hidehiko Shiraiwa, Amol Ramesh Joshi, Hapreet Sachar, David Matsumoto, Lovejeet Singh, Chih-Yuh Yang
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Patent number: 10600774Abstract: An integrated circuit (IC) is fabricated with transistors and gated diodes having selected epitaxial growth. The transistors may be Field-Effect Transistors (FETs) for example, and more specifically, may be fin-based FETs (finFETs) where fins are fabricated, in part, using an epitaxial growth process. The IC is further fabricated with gated diodes. Selected gated diodes within the IC are fabricated using the epitaxial growth process on the fins of the gated diode to form an anode and a cathode. Other selected gated diodes are fabricated without using epitaxial growth processes to form the anode and the cathode. In still another aspect, selected gated diodes are fabricated with epitaxial growth processes on either the anode or the cathode, but not both. In an exemplary aspect, the other selected gated diodes are part of electrostatic discharge (ESD) protection circuits in an input/output (I/O) region of the IC.Type: GrantFiled: April 6, 2018Date of Patent: March 24, 2020Assignee: QUALCOMM IncorporatedInventors: Youn Sung Choi, Youseok Suh, Kwanyong Lim
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Patent number: 10566341Abstract: A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.Type: GrantFiled: June 25, 2019Date of Patent: February 18, 2020Assignee: Cypress Semiconductor CorporationInventors: Ming Sang Kwan, Shenqing Fang, Youseok Suh, Michael A. Van Buskirk
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Publication number: 20190326303Abstract: A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.Type: ApplicationFiled: June 25, 2019Publication date: October 24, 2019Applicant: Cypress Semiconductor CorporationInventors: Ming Sang Kwan, Shenqing Fang, Youseok Suh, Michael A. VAN BUSKIRK
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Publication number: 20190319035Abstract: A memory device is described. Generally, the device includes a string of memory transistors, a source select transistor coupled to a first end of the string of memory transistor and a drain select transistor coupled to a second end of the string of memory transistor. Each memory transistor includes a gate electrode formed adjacent to a charge trapping layer and there is neither a source nor a drain junction between adjacent pairs of memory transistors or between the memory transistors and source select transistor or drain select transistor. In one embodiment, the memory transistors are spaced apart from adjacent memory transistors and the source select transistor and drain select transistor, such that channels are formed therebetween based on a gate fringing effect associated with the memory transistors. Other embodiments are also described.Type: ApplicationFiled: April 10, 2019Publication date: October 17, 2019Inventors: Youseok Suh, Sung-Yong Chung, Ya-Fen LIN, Yi-Ching Jean Wu