Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an active area including a channel region sandwiched between two source/drain regions; an insulation region surrounding the active area from a top view; and a dielectric layer disposed over and in contact with an interface between the insulation region and the source/drain regions. A method of manufacturing the same is also disclosed.

Abstract: A grinding machine includes a slight gyration module for driving a homogeneous container to undergo an X-axial motion and a Y-axial motion within ±1-3 mm distance, a homogeneous-stick rotation module for rotating a homogeneous stick in the homogeneous container so as to generate an eccentric motion between the homogeneous stick and the homogeneous container, and a homogeneous-stick vertical movement module for vertically moving the homogeneous stick with respect to the homogeneous container. When the homogeneous stick is lowered into the homogeneous container by the homogeneous-stick vertical movement module, an eccentric motion with a 1-3 mm radius of gyration can be activated between the homogeneous container and the homogeneous stick so as to carry out the grinding in a tiny slim space between the homogeneous container and the homogeneous stick; such that the grinding efficiency of the grinding machine can be substantially enhanced.

Abstract: A hearing aid device comprising: a body, accommodating a circuit unit; a ear mold, capable of being accommodated in ear canal to convey sound; a connecting portion, capable of connecting the body with the ear mold; a wireless transmission unit, electrically coupled with the circuit unit, capable of communicating with at least one wireless device; and a rechargeable battery unit, coupled with the body and provided with a convex structure on a side facing the body.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a source region and a drain region arranged in a semiconductor substrate, where the source region is laterally separated from the drain region. A gate stack is arranged over the semiconductor substrate and between the source region and the drain region. A cap layer is arranged over the gate stack, where a bottom surface of the cap layer contacts a top surface of the gate stack. Sidewall spacers are arranged along sides of the gate stack and the cap layer. A resist protective oxide (RPO) layer is disposed over the cap layer, where the RPO layer extends along sides of the sidewalls spacers to the semiconductor substrate. A contact etch stop layer is arranged over the RPO layer, the source region, and the drain region.

Abstract: A method for manufacturing a semiconductor structure including isolations includes receiving a substrate including a first region and a second region; forming a patterned hard mask, the patterned hard mask including a first opening exposing a portion of the first region and a second opening exposing a portion of the second region; removing portions of the substrate to form a first trench in the first region and to form a second trench in the second region; performing an ion implantation to a portion of the patterned hard mask in the first region and a portion of the substrate exposed from the first trench; enlarging the first opening to form a third opening over the first trench and enlarging the second opening to form a fourth opening over the second trench; and forming a first isolation by filling the first trench and a second isolation by filling the second trench.

Abstract: The present disclosure provides a carrying device and an operation method thereof. The carrying device includes: a floating platform; and at least one flexible unit provided on a bottom side of the floating plate and having a cavity formed therein. The flexible unit is deformed under a stress to reduce the friction force between the flexible unit and the solid in the water, which allows the carrying device to break free from the solid without external help.

Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode, a channel region, a pair of source/drain regions and a threshold voltage adjusting region. The gate electrode is over the semiconductor substrate. The channel region is between the semiconductor substrate and the gate electrode. The channel region includes a pair of first sides opposing to each other in a channel length direction, and a pair of second sides opposing to each other in a channel width direction. The source/drain regions are adjacent to the pair of first sides of the channel region in the channel length direction. The threshold voltage adjusting region covers the pair of second sides of the channel region in the channel width direction, and exposing the pair of first sides of the channel region in the channel length direction.

Abstract: A semiconductor apparatus includes a high side region and a low side region, wherein the high side region includes semiconductor devices, and those semiconductor devices have at least two devices with different operating voltages. In the high side region, at least one isolation structure is located between the devices with different operating voltages to prevent short circuit between the devices.

Abstract: A half bridge circuit driver chip and the protection method thereof are provided. The high side voltage detecting circuit connects to a high side signal output terminal and detects the high side turn-on voltage of the high side transistor, so as to obtain a high side turn-on signal. The low side voltage detection circuit connects to a low side signal output terminal and detects a low side turn-on voltage of a low side transistor, so as to obtain a low side turn on signal. When the high side turn-on signal and the low side turn-on signal are received by a protection circuit, a reset signal is generated. The reset signal is sent to the high side driving circuit for turning off the high side transistor and to the low side driving circuit for turning off the low side transistor.

Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode, a pair of source/drain regions and a a threshold voltage adjusting region. The gate electrode is over the semiconductor substrate. The channel region is between the semiconductor substrate and the gate electrode. The source/drain regions are adjacent to two opposing sides of the channel region in a channel length direction. The threshold voltage adjusting region is adjacent to two opposing sides of the channel region in a channel width direction, wherein the threshold voltage adjusting region and the channel region have the same doping type.

Abstract: A driver chip includes a high side input terminal, a pulse generator, a level shift, a current detector, a high side output controller, and a high side output terminal. The high side input terminal receives the high side input signal and the pulse generator transfers the high side input signal into the rise pulse signal and the fall pulse signal. The current detector detects the first current and the second current flowing through the level shift, and the high side output controller generates the high side output signal. The high side output terminal controls the switching of the high side transistor by the high side output signal.

Abstract: The present disclosure provides a carrying device and an operation method thereof. The carrying device includes: a floating platform; and at least one flexible unit provided on a bottom side of the floating plate and having a cavity formed therein. The flexible unit is deformed under a stress to reduce the friction force between the flexible unit and the solid in the water, which allows the carrying device to break free from the solid without external help.

Abstract: The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface.

Abstract: A method for manufacturing a semiconductor structure including isolations includes receiving a substrate including a first region and a second region; forming a patterned hard mask, the patterned hard mask including a first opening exposing a portion of the first region and a second opening exposing a portion of the second region; removing portions of the substrate to form a first trench in the first region and to form a second trench in the second region; performing an ion implantation to a portion of the patterned hard mask in the first region and a portion of the substrate exposed from the first trench; enlarging the first opening to form a third opening over the first trench and enlarging the second opening to form a fourth opening over the second trench; and forming a first isolation by filling the first trench and a second isolation by filling the second trench.

Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode, a pair of source/drain regions and a a threshold voltage adjusting region. The gate electrode is over the semiconductor substrate. The channel region is between the semiconductor substrate and the gate electrode. The source/drain regions are adjacent to two opposing sides of the channel region in a channel length direction. The threshold voltage adjusting region is adjacent to two opposing sides of the channel region in a channel width direction, wherein the threshold voltage adjusting region and the channel region have the same doping type.

Abstract: A conductive-insulator-semiconductor (CIS) device with low flicker noise is provided. In some embodiments, the CIS device comprises a semiconductor substrate, a pair of source/drain regions, a selectively-conductive channel, and a gate electrode. The pair of source/drain regions is in the semiconductor substrate, and the source/drain regions are laterally spaced. The selectively-conductive channel is in the semiconductor substrate, and extends laterally in a first direction, from one of the source/drain regions to another one of the source/drain regions. The gate electrode comprises a pair of peripheral segments and a central segment. The peripheral segments extend laterally in parallel in the first direction. The central segment covers the selectively-conductive channel and extends laterally in a second direction transverse to the first direction, from one of the peripheral segments to another one of the peripheral segments. A method for manufacturing the CIS device is also provided.

Abstract: The present disclosure provides a method of manufacturing a Schottky diode. A substrate is provided. A first well region of a first conductive type is formed in the substrate. A first ion implantation of a second conductive type is performed on a first portion of the first well region while keeping a second portion of the first well region from being implanted. A first doped region is formed by heating the substrate to cause dopant diffusion between the first portion and the second portion. A metal-containing layer is formed on the first doped region to obtain a Schottky barrier interface.

Abstract: A semiconductor device includes a semiconductor substrate, and a first transistor. The first transistor has a first gate on the semiconductor substrate, and a first lightly doped source/drain region within the semiconductor substrate to determine a first channel region beneath the first gate. A doping ratio determined as a concentration of the first lightly doped source/drain region divided by a concentration of the first channel region ranges from 1.0×1013 to 10×1017.

Abstract: Disclosed is a multimedia server, including a virtual channel management unit, a virtual channel broadcasting unit, and a program on-demand playback unit. The virtual channel management unit associates a number of programs on-demand with a virtual channel, and creates a virtual schedule for the virtual channel. According to the virtual schedule, the virtual channel broadcasting unit provides broadcasting of the virtual channel to a number of nonspecific users. Meanwhile, the program on-demand playback unit, at any time in response to a user instruction selecting a program on-demand, provides the selected program to a user device.

Abstract: A semiconductor apparatus includes a high side region and a low side region, wherein the high side region includes semiconductor devices, and those semiconductor devices have at least two devices with different operating voltages. In the high side region, at least one isolation structure is located between the devices with different operating voltages to prevent short circuit between the devices.