Abstract: A manufacturing method of metal oxide semiconductor transistor is provided. A substrate is provided. A source/drain extension region is formed in the substrate. A pad material layer with low dielectric constant is formed on the substrate. A trench is formed in the substrate and the pad material layer. A gate dielectric layer is formed on the surface of the substrate in the trench. A stacked gate structure is formed in the trench, wherein the top surface of a conductive layer of the stacked gate structure is higher than the surface of the pad material layer. A spacer material layer is formed conformably on the substrate. Portions of the spacer material layer and the pad material layer are removed so as to form a pair of first spacers and a pair of pad blocks. A source/drain is formed on the substrate beside the stacked gate structure.

Abstract: A method for manufacturing semiconductor shallow trench isolation is performed as follows. First, a semiconductor substrate including at least one shallow trench is provided, and the shallow trench is filled with Spin-On-Dielectric (SOD) material, e.g., polysilazane, to form a SOD material layer. Then, the SOD material layer is subjected to a planarization process. Oxygen ions are implanted into the SOD material layer to a predetermined depth, and a high temperature process is performed afterwards to transform the portion of the SOD material layer having oxygen ions into a silicon oxide layer. The oxygen ions can be implanted by plasma doping, immersion doping or ion implantation.

Abstract: A progressive JPEG image decoding method is provided. In the decoding method, a non-zero history table and a sign table of each variable length decoding (VLD) result are recorded and used as a reference for decoding the next scan layer. The decoded coefficients are no longer directly stored in a memory so as to save the memory space. Accordingly, an image can be decoded and displayed correctly even with limited memory space.

Abstract: A dynamic random access memory (DRAM) is provided. The dynamic random access memory includes a deep trench capacitor disposed in a first trench of a substrate, a conductive layer disposed in a second trench of the substrate, a gate structure, and a conductive layer disposed on the surface of the substrate at two sides of the gate structure. The depth of the second trench is smaller than the depth of the first trench, and the second trench partially overlaps with the first trench. The conductive layer disposed in the second trench is electrically connected with the conductive layer of the deep trench capacitor. The gate structure is disposed on the substrate. The conductive layer at one side of the gate structure is electrically connected with the conductive layer disposed in the second trench.

Abstract: A dynamic random access memory (DRAM) is provided. The dynamic random access memory includes a deep trench capacitor disposed in a first trench of a substrate, a conductive layer disposed in a second trench of the substrate, a gate structure, and a conductive layer disposed on the surface of the substrate at two sides of the gate structure. The depth of the second trench is smaller than the depth of the first trench, and the second trench partially overlaps with the first trench. The conductive layer disposed in the second trench is electrically connected with the conductive layer of the deep trench capacitor. The gate structure is disposed on the substrate. The conductive layer at one side of the gate structure is electrically connected with the conductive layer disposed in the second trench.

Abstract: A method for progressive JPEG image decoding and a method for controlling a decoder are disclosed. In the image decoding method, an amount of macroblocks that can be stored during the process of decoding is determined according to the size of the memory, and then, according to the amount of macroblocks, a scan layer is divided into a plurality of decoding areas. In each turn of decoding, data of the same decoding area in all the scan layers are decoded. In the next turn, a decoding area next to the previous one is selected for decoding. Therefore, the present invention can decode the image correctly with a limited memory resource, without affecting the display quality of the image. The image decoding method also can be applied to the control of a decoder, so as to reduce the occupied memory capacity.

Abstract: An apparatus and method for a receiver to recognize channel numbers, skew delays, and polarities of N channels by extracting the properties of the transmitted signals are provided. Each of the N signals comprises a plurality of digital symbols with certain characteristics known to the receiver. The apparatus comprises a calculation unit, a statistic unit, and a selection unit. The calculation unit is used to compute a value for each channel according to the properties of the digital symbols captured on that particular channel within a predetermined interval. The statistic unit is used to derive a plurality of statistical values based on the values from the calculation unit. The selection unit recognizes the special property of a channel, identifies the remaining N?1 channels, compensates the skew delays, and corrects polarities.

Abstract: A card connector assembly is adapted for use with a plurality of different wireless module cards, and a SIM card, and includes a first card connector mounted on a side of a circuit board and adapted to be connected electrically to a motherboard of a portable computer. A second card connector is mounted on the circuit board, is connected electrically to the first card connector, and is adapted for connecting electrically with one of the wireless module cards such that the motherboard of the portable computer is able to access the wireless module card via the first and second card connectors. A SIM card connector is mounted on the circuit board, is connected electrically to the second card connector, and is adapted for connecting electrically with the SIM card.

Abstract: A method for using non-volatile memory and an electronics device thereof is provided. The method includes the following steps. First, a non-volatile memory pre-loaded with a plurality of original data is provided. When updating the original data with new data, if free space is available in the non-volatile memory, then the new data is written into the free space. If free space is not available, all the updated original data is written into the erased non-volatile memory.

Abstract: A manufacturing method of metal oxide semiconductor transistor is provided. A substrate is provided. A source/drain extension region is formed in the substrate. A pad material layer with low dielectric constant is formed on the substrate. A trench is formed in the substrate and the pad material layer. A gate dielectric layer is formed on the surface of the substrate in the trench. A stacked gate structure is formed in the trench, wherein the top surface of a conductive layer of the stacked gate structure is higher than the surface of the pad material layer. A spacer material layer is formed conformably on the substrate. Portions of the spacer material layer and the pad material layer are removed so as to form a pair of first spacers and a pair of pad blocks. A source/drain is formed on the substrate beside the stacked gate structure.

Abstract: A method for preparing a capacitor structure comprises forming an opening in a dielectric structure, and forming a cylindrical capacitor including a first conductive layer on the sidewall of the opening, a first dielectric layer on the surface of the first conductive layer, and a second conductive layer on the surface of the first dielectric layer. A top portion of the first conductive layer is selectively removed, and a predetermined portion of the dielectric structure is removed. A second dielectric layer covering the cylindrical capacitor and the dielectric structure is then formed to electrically separate the first conductive layer from the second conductive layer. Subsequently, a portion of the second dielectric layer is removed from the top surface of the second conductive layer, and a third conductive layer is formed on the second dielectric layer and the top surface of the second conductive layer.

Abstract: A dynamic random access memory (DRAM) is provided. The dynamic random access memory includes a deep trench capacitor disposed in a first trench of a substrate, a conductive layer disposed in a second trench of the substrate, a gate structure, and a conductive layer disposed on the surface of the substrate at two sides of the gate structure. The depth of the second trench is smaller than the depth of the first trench, and the second trench partially overlaps with the first trench. The conductive layer disposed in the second trench is electrically connected with the conductive layer of the deep trench capacitor. The gate structure is disposed on the substrate. The conductive layer at one side of the gate structure is electrically connected with the conductive layer disposed in the second trench.

Abstract: A digital audio-video information reproducing apparatus and a reproducing method thereof are provided, in which a predetermined time point or a keyword from users is used as a basic for controlling the reproduction of a file-based AV file. If the subtitle is in a bitmap format, the bitmap subtitle is transformed to text contents. If the subtitle is in a text format, the subtitle is directly interpreted. Then, the interpreted/transformed text content is compared with the keyword, so as to interpret a matched time point corresponding to the subtitle, and the matched time point is set as a start or end point for reproducing the AV file. Alternatively, the comparison result may be applied in analyzing a correlation between the AV file and the keyword.

Abstract: A method for operating a plurality of stockers, comprises the steps of: monitoring utilization of the plurality of stockers, each stocker capable of storing a plurality of wafer, LCD or reticle containers; and automatically transferring a first wafer, LCD or reticle container from a first one of the stockers to a second one of the stockers if the utilization of the first stocker is greater than a predetermined thereshold.

Abstract: A method of controlling the implant dosage is provided. First, the residual gases within an ion implant station are analyzed and the partial pressure of each residual gas is measured. Thereafter, the current Im of the ion beam is measured and the real dosage Ir of the ion beam implanted into a wafer is calculated. Since all the residual gases in the ion implant station are considered, the implanting dosage can be accurately controlled.

Abstract: A lock includes a housing, a first cylinder positioned in the housing, and a second cylinder positioned in the housing and located in an inner side of the first cylinder. The housing includes two annular positioning grooves defined in an inner periphery thereof for positioning the first and second cylinders. The housing further includes a plurality of pin tumbler assemblies respectively received in pin tumbler holes in an outer periphery thereof. The first cylinder includes a keyhole and a plurality of pin tumbler holes. The second cylinder includes a keyhole aligned with the keyhole of the first cylinder and a plurality of pin tumbler holes. Each pin tumbler hole of the housing is aligned with an associated one of the pin tumbler holes of the first and second cylinders.

Abstract: An audio decoding system with a ring buffer, which receives an audio stream and maintains it in synchronization. The audio stream has multiple basic decoding units. The system includes a ring buffer, a parser and a decoder. The parser can align start positions of a basic decoding unit and the ring buffer based on features of the audio stream and a synchronization mechanism implied in the start position of the ring buffer such that auto-synchronization is performed even when the audio stream has transmission errors to thus cause data increase or reduction.

Abstract: A DVD player with language learning function using a general DVD as an audio source of language learning. The DVD player includes a DVD play unit for playing the audio and video of the DVD and outputting a subtitle picture and display information for the subtitle picture according to a play control signal, a text identifying unit for receiving the subtitle picture and converting the subtitle picture into text data, a text-to-speech unit for receiving the text data and converting the text data into synthesized voice signal, and a control module for receiving the display information of the subtitle picture and generating the play control signal according to the display information and a learning mode selected by the user. Thus, the DVD player of the invention does not need specific audio source media.