Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion, and the first strip portion and the second strip portion are elongated in a first elongated axis and are spaced apart from each other. The method includes forming a layer over the first overlay grating. The layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion.

Abstract: A display device includes a first substrate, a first active element layer, first to third light-emitting elements, a first pixel defining layer, and fourth to sixth light-emitting elements. The first active element layer is disposed on the first substrate. The first, second and third light-emitting elements are electrically connected with the first active element layer. The first, second and third light-emitting elements have first, second and third light-emitting layers respectively. The first pixel defining layer is disposed on the first active element layer and has first, second and third openings. The first, second and third light-emitting layers are disposed in the first, second and third openings respectively. The fourth, fifth and sixth light-emitting elements are disposed on the first pixel defining layer. A vertical distance between the first light-emitting element and the fourth light-emitting element is greater than 0 micrometers and less than or equal to 5 micrometers.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.

Abstract: A negative electrode of a thin film battery and method for forming the same, wherein the negative electrode comprises a porous structural layer, a capacitor layer, and a lithium ion source layer. The porous structural layer is formed on a metal substrate, and a thickness of the porous structural layer is between 200 nm and 700 nm. The capacitor layer is formed on the porous structural layer, and a thickness is between 100 nm and 300 nm. The lithium ion source layer is formed on the capacitor layer. Since the porous structural layer is made of stable material, a problem of charging-discharging instability that is occurred due to damage of battery structure caused by the volume expansion of the capacitor layer during the charging-discharging process can be improved. In addition, the negative electrode can be combined with a positive electrode for forming a thin film battery.

Abstract: Systems and methods for a local proxy for service discovery. In some embodiments, an Internet-of-Things (IoT) gateway may include: a processor; and a memory coupled to the processor, the memory including program instructions stored thereon that, upon execution by the processor, cause the IoT gateway to: retrieve, by a service discovery agent, endpoint information maintained by a service discovery server remotely located with respect to the IoT gateway; store the service endpoint information in the memory; receive a service request aimed at a service endpoint; and provide the service endpoint information, from the memory, in response to the service request.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.

Abstract: Systems and methods for a local proxy for service discovery. In some embodiments, an Internet-of-Things (IoT) gateway may include: a processor; and a memory coupled to the processor, the memory including program instructions stored thereon that, upon execution by the processor, cause the IoT gateway to: retrieve, by a service discovery agent, endpoint information maintained by a service discovery server remotely located with respect to the IoT gateway; store the service endpoint information in the memory; receive a service request aimed at a service endpoint; and provide the service endpoint information, from the memory, in response to the service request.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.

Abstract: A display module includes a bottom substrate, a display device having a plurality of display pixels, and a diffusion module. The display pixels are disposed between the bottom substrate and the diffusion module. The diffusion module has a thickness and a haze, wherein the haze of the diffusion module satisfies: A < Haze < B ; wherein A = 0.642 × ( NP ) 0.35 ( NT ) 0.32 ; B = 0.821 × ( NP ) 0.45 ( NT ) 0.60 ; NP = 25400 / PPI 63 ? ? µm ; and NT = T 500 ? ? µm ; wherein PPI is a resolution of the display module, T is the thickness of the diffusion module, and Haze is the haze of the diffusion module.

Abstract: A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.

Abstract: A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.

Abstract: A display module includes a bottom substrate, a display device having a plurality of display pixels, and a diffusion module. The display pixels are disposed between the bottom substrate and the diffusion module. The diffusion module has a thickness and a haze, wherein the haze of the diffusion module satisfies: A < Haze ? ( % ) < B ; wherein A = 0.642 × ( NP ) 0.35 ( NT ) 0.32 ; B = 0.821 × ( NP ) 0.45 ( NT ) 0.60 ; NP = 25400 / PPI 63 ? ? µm ; and NT = T 500 ? ? µm ; wherein PPI is a resolution of the display module, T is the thickness of the diffusion module, and Haze is the haze of the diffusion module.

Abstract: A growth method of dendritic crystal structure that provides directional heat transfer, including the steps: A. providing a substrate, whereby the substrate is provided with a plurality of crystal defects; B. depositing a plurality of metal ions on the substrate using a deposition method, whereby the metal ions on the crystal defects enable the growth of dendritic crystals. Moreover, an interspace is provided between each of the dendritic crystals. Hence, when the substrate is in contact with a heat source, heat energy is transferred from the substrate in the growth direction of the dendritic crystals; or, when the dendritic crystals are disposed at the position of a heat source, heat provided by the heat source is transferred from the dendritic crystals in a direction toward the substrate. Accordingly, the fractal structure of the dendritic crystals is used to provide ample heat dissipation areas and contact areas.

Abstract: An organic light emitting display panel includes an array substrate, at least one blue sub-pixel, at least one green sub-pixel, and at least one red sub-pixel. The blue sub-pixel, the green sub-pixel, and the red sub-pixel are disposed on the array substrate and are respectively configured for providing blue light, green light, and red light. The blue sub-pixel, the green sub-pixel, and the red sub-pixel together have a light emitting surface. The light emitting surface has a normal direction which is along a normal line of the light emitting surface, and has an oblique direction which forms an angle greater than 0 degree with the normal line. The red light has a red normal intensity RI1 along the normal direction, and a red oblique intensity RI2 along the oblique direction. When the angle is about 15 degrees, 1.12?RI2/RI1?1.

Abstract: A heat transfer component with dendritic crystal structures and a purpose and method of use for such a component; this component is used to resolve the deficiency concerning conventional heat transfer components possessing inadequate surface areas for heat dissipation. Dendritic crystal structure is comprising: a substrate and multiple dendritic crystals. The substrate contains multiple preset crystal defects in which all the dendritic crystals deposit and congregate, and a space is located between each dendritic crystal for thermal convection. Regarding the method of use, the substrate is connected to a heat source, which then induces directional heat transfer from the substrate and the metal layer to the main branch and at least one sub-branch of the dendritic crystal, or the dendritic crystal is placed on a heat source, which induces heat transfer from the crystal to the substrate.

Abstract: A touch panel having a light transmitting area and a light shielding area adjacent to the light transmitting area is provided. The touch panel includes a cover plate, a first decoration layer, a touch-sensing element and a metal conductive layer. The first decoration layer is disposed on the cover plate and located in the light shielding area. The first decoration layer has at least one hollow area. The touch-sensing element is disposed on the cover plate and at least located in the light transmitting area. The metal conductive layer is disposed on the first decoration layer, located in the light shielding area and surrounds the touch-sensing element. A portion of the metal conductive layer surrounds the hollow area.

Abstract: A touch display device including a touch panel, a protection layer, a conductive optical adhesive layer and a display panel is provided. The touch panel includes a substrate, pads, at least one grounding pad, a touch-sensing device, and at least one ESD protection line. The touch panel includes a pad area and an active area. The pads and the grounding pad are disposed on the substrate and located in the pad area. The touch-sensing device is disposed on the substrate and located in the active area. The ESD protection line is disposed on the substrate and located at a side of the active area. The protection layer including a first opening covers the touch panel and a portion of the pad area is exposed by the first opening. The conductive optical adhesive layer is disposed on the protection layer and electrically connected to the ESD protection circuit.

Abstract: A touch panel includes a substrate, a patterned decoration layer, a patterned transparent conductive layer and an optical compensation layer. The patterned decoration layer is disposed on the substrate so as to define an opening region and a hole on the substrate. The hole is disposed adjacently to a side of the opening region. The patterned transparent conductive layer is disposed on the substrate. The patterned transparent conductive layer includes a transparent conductive pattern. The transparent conductive pattern is disposed correspondingly to the hole, and the transparent conductive pattern completely covers the hole along a vertical projective direction perpendicular to the substrate. The optical compensation layer is disposed on the substrate, and the optical compensation layer covers the hole along the vertical projective direction.

Abstract: A touch panel, having a light transmission touch sensing region and a peripheral region adjacent to at least one side of the light transmission touch sensing region, includes an inner frame and a decoration frame disposed in the peripheral region. The peripheral region has an inner edge and an outer edge, wherein the inner edge is closer to the light transmission touch sensing region than the outer edge. The inner sidewall of the inner frame is disposed along the inner edge of the peripheral region. The decoration frame includes at least one decoration layer. The pattern of the decoration layer does not exceed the inner edge of the peripheral region.